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JMTJ210P02A
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Jiangsu JieJie Microelectronics MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownJMTJ210P02A
Jiangsu JieJie Microelectronics · MOSFETs · SOT-23-3L
JMTJ210P02A from Jiangsu JieJie Microelectronics, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±12 V absolute maximum, threshold VGS(th) -0.4 to -1.0 V at ID = -250 µA. |
| 2 | S | passive | Source; continuous drain-to-source diode current up to -7 A, with the MOSFET rated for -7 A continuous drain current at TA = 25 °C. |
| 3 | D | passive | Drain; drain-source voltage rated -20 V, continuous drain current -7 A at TA = 25 °C and pulsed -28 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Jiangsu JieJie Microelectronics |
| Package | SOT-23-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -20 | V | 1 | |||
| Gate-Source Voltage | VGSS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | -7 | A | TA = 25℃ | 1 | ||
| Continuous Drain Current | ID | -4.6 | A | TA = 100℃ | 1 | ||
| Pulsed Drain Current | IDM | -28 | A | note1 | 1 | ||
| Power Dissipation | PD | 2 | W | TA = 25℃ | 1 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 62.5 | ℃/W | 1 | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | -20 | V | VGS=0V, ID= -250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS= -20V, VGS=0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS= ±12V | 2 | |
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.7 | -1 | V | VDS=VGS, ID= -250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | 18.7 | 24.5 | mΩ | VGS= -4.5V, ID= -7A | 2 | |
| Static Drain-Source on-Resistance | RDS(on) | 22.7 | 32 | mΩ | VGS= -2.5V, ID= -5A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | -7 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | -28 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | -0.8 | -1.2 | V | VGS=0V, IS= -7A | 2 | |
| Input Capacitance | Ciss | 2000 | pF | VDS= -10V, VGS=0V, f=1.0MHz | 2 | ||
| Output Capacitance | Coss | 242 | pF | 2 | |||
| Reverse Transfer Capacitance | Crss | 231 | pF | 2 | |||
| Total Gate Charge | Qg | 15.3 | nC | VDS= -10V, ID= -3A, VGS= -4.5V | 2 | ||
| Gate-Source Charge | Qgs | 2.2 | nC | 2 | |||
| Gate-Drain (Miller) Charge | Qgd | 4.4 | nC | 2 | |||
| Turn-on Delay Time | td(on) | 10 | ns | VDD = -10V, ID= -7A, VGS= -4.5V, RGEN=2.5Ω | 2 | ||
| Turn-on Rise Time | tr | 31 | ns | 2 | |||
| Turn-off Delay Time | td(off) | 28 | ns | 2 | |||
| Turn-off Fall Time | tf | 8 | ns | 2 |
CAD (KiCad official)
- Symbol:
JMTJ210P02A - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files:
jmtj210p02a-etched.step/jmtj210p02a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);jmtj210p02a.step/jmtj210p02a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Jiangsu JieJie Microelectronics datasheet (6 pp, sha256
697c8b14354ca04d, retrieved 2026-10-14, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).