# JCS7HN65FC-220MF

**Jilin Sino Microelectronics** · MOSFETs · TO-220F-3

JCS7HN65FC-220MF from Jilin Sino Microelectronics, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS(th) of 2.0 V to 4.0 V at ID=250μA, absolute maximum VGSS of ±30 V. |
| 2 | D | passive | Drain; rated VDSS of 650 V and continuous ID of 7.0 A at 25°C (limited by junction temperature), with 28 A pulsed. |
| 3 | S | passive | Source; the body diode carries up to 7.0 A continuous (IS) and 28 A pulsed (ISM). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Jilin Sino Microelectronics |
| Package | TO-220F-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 650 | V |  | 2 |
| Drain Current - continuous | ID |  |  | 7 | A | TC=25℃; *limited by maximum junction temperature | 2 |
| Drain Current - continuous | ID |  |  | 4.6 | A | TC=100℃ | 2 |
| Drain Current - pulse | IDM |  |  | 28 | A | note 1 | 2 |
| Gate-Source Voltage | VGSS | -30 |  | 30 | V |  | 2 |
| Single Pulsed Avalanche Energy | EAS |  |  | 710 | mJ | note 2: L=27mH, IAS=7.0A, VDD=50V, RG=25Ω, starting TJ=25℃ | 2 |
| Avalanche Current | IAR |  |  | 7 | A | note 1 | 2 |
| Repetitive Avalanche Energy | EAR |  |  | 12.6 | mJ | note 1: pulse width limited by maximum junction temperature | 2 |
| Peak Diode Recovery dv/dt | dv/dt |  |  | 4.5 | V/ns | note 3: ISD≤7.0A, di/dt≤300A/μs, VDD≤BVDSS, starting TJ=25℃ | 2 |
| Power Dissipation (TO-220MF column) | PD |  |  | 54.34 | W | TC=25℃ | 2 |
| Derating above 25℃ (TO-220MF column) | PD |  | 0.434 |  | W/℃ | Derate above 25℃ | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | ℃ |  | 2 |
| Maximum Lead Temperature for Soldering Purposes | TL |  |  | 300 | ℃ |  | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 650 |  |  | V | ID=250μA, VGS=0V | 3 |
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ |  | 0.64 |  | V/℃ | ID=250μA, referenced to 25℃ | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 10 | μA | VDS=650V, VGS=0V, TC=25℃ | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 100 | μA | VDS=520V, TC=125℃ | 3 |
| Gate-body leakage current, forward | IGSSF |  |  | 100 | nA | VDS=0V, VGS=30V | 3 |
| Gate-body leakage current, reverse | IGSSR | -100 |  |  | nA | VDS=0V, VGS=-30V | 3 |
| Gate Threshold Voltage | VGS(th) | 2 |  | 4 | V | VDS=VGS, ID=250μA | 3 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 1.05 | 1.35 | Ω | VGS=10V, ID=3.5A, 25℃ | 3 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 1.84 | 2.35 | Ω | VGS=10V, ID=3.5A, 100℃ | 3 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 2.73 | 3.4 | Ω | VGS=10V, ID=3.5A, 150℃ | 3 |
| Forward Transconductance | gfs |  | 7.5 | 14 | S | VDS=40V, ID=7.0A (note 4) | 3 |
| Gate resistance | Rg | 0.8 |  | 4 | Ω | F=1.0MHz, open drain | 3 |
| Input capacitance | Ciss |  | 1100 | 1600 | pF | VDS=25V, VGS=0V, f=1.0MHz | 3 |
| Output capacitance | Coss |  | 251 | 300 | pF | VDS=25V, VGS=0V, f=1.0MHz | 3 |
| Reverse transfer capacitance | Crss |  | 14 | 20 | pF | VDS=25V, VGS=0V, f=1.0MHz | 3 |
| Turn-On delay time | td(on) |  | 11 | 31 | ns | VDD=325V, ID=7A, RG=25Ω (notes 4, 5) | 4 |
| Turn-On rise time | tr |  | 35 | 80 | ns | VDD=325V, ID=7A, RG=25Ω (notes 4, 5) | 4 |
| Turn-Off delay time | td(off) |  | 46 | 95 | ns | VDD=325V, ID=7A, RG=25Ω (notes 4, 5) | 4 |
| Turn-Off Fall time | tf |  | 40 | 92 | ns | VDD=325V, ID=7A, RG=25Ω (notes 4, 5) | 4 |
| Total Gate Charge | Qg |  | 32 | 41 | nC | VDS=520V, ID=7A, VGS=10V (notes 4, 5) | 4 |
| Gate-Source charge | Qgs |  | 6 | 15 | nC | VDS=520V, ID=7A, VGS=10V (notes 4, 5) | 4 |
| Gate-Drain charge | Qgd |  | 15 | 40 | nC | VDS=520V, ID=7A, VGS=10V (notes 4, 5) | 4 |
| Maximum Continuous Drain-Source Diode Forward Current | IS |  |  | 7 | A |  | 4 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM |  |  | 28 | A |  | 4 |
| Drain-Source Diode Forward Voltage | VSD |  |  | 1.4 | V | VGS=0V, IS=7.0A | 4 |
| Reverse recovery time | trr |  | 345 | 900 | ns | VGS=0V, IS=7.0A, dIF/dt=100A/μs (note 4) | 4 |
| Reverse recovery charge | Qrr |  | 3.2 | 8 | μC | VGS=0V, IS=7.0A, dIF/dt=100A/μs (note 4) | 4 |
| Thermal Resistance, Junction to Case (TO-220MF) | Rth(j-c) |  |  | 2.3 | ℃/W | JCS7HN65FC (TO-220MF) | 4 |
| Thermal Resistance, Junction to Ambient (TO-220MF) | Rth(j-A) |  |  | 35.67 | ℃/W | JCS7HN65FC (TO-220MF) | 4 |

## CAD (KiCad official)

- Symbol: `JCS7HN65FC-220MF`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220F-3 (KiCad packages3D, STEP)

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Jilin Sino Microelectronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588890666659696640) (19 pp, sha256 `f1a8dcabd948aa97`, retrieved 2026-10-14, tier: lcsc)
- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/jcs7hn65fc-220mf-datasheet.pdf)