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JCS7HN65FC-220MF

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Jilin Sino Microelectronics MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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JCS7HN65FC-220MF

Jilin Sino Microelectronics · MOSFETs · TO-220F-3

JCS7HN65FC-220MF from Jilin Sino Microelectronics, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS(th) of 2.0 V to 4.0 V at ID=250μA, absolute maximum VGSS of ±30 V.
2 D passive Drain; rated VDSS of 650 V and continuous ID of 7.0 A at 25°C (limited by junction temperature), with 28 A pulsed.
3 S passive Source; the body diode carries up to 7.0 A continuous (IS) and 28 A pulsed (ISM).

Key specifications

Parameter Value
Manufacturer Jilin Sino Microelectronics
Package TO-220F-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 650 V 2
Drain Current - continuous ID 7 A TC=25℃; *limited by maximum junction temperature 2
Drain Current - continuous ID 4.6 A TC=100℃ 2
Drain Current - pulse IDM 28 A note 1 2
Gate-Source Voltage VGSS -30 30 V 2
Single Pulsed Avalanche Energy EAS 710 mJ note 2: L=27mH, IAS=7.0A, VDD=50V, RG=25Ω, starting TJ=25℃ 2
Avalanche Current IAR 7 A note 1 2
Repetitive Avalanche Energy EAR 12.6 mJ note 1: pulse width limited by maximum junction temperature 2
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns note 3: ISD≤7.0A, di/dt≤300A/μs, VDD≤BVDSS, starting TJ=25℃ 2
Power Dissipation (TO-220MF column) PD 54.34 W TC=25℃ 2
Derating above 25℃ (TO-220MF column) PD 0.434 W/℃ Derate above 25℃ 2
Operating and Storage Temperature Range TJ, TSTG -55 150 ℃ 2
Maximum Lead Temperature for Soldering Purposes TL 300 ℃ 2
Drain-Source Breakdown Voltage BVDSS 650 V ID=250μA, VGS=0V 3
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ 0.64 V/℃ ID=250μA, referenced to 25℃ 3
Zero Gate Voltage Drain Current IDSS 10 μA VDS=650V, VGS=0V, TC=25℃ 3
Zero Gate Voltage Drain Current IDSS 100 μA VDS=520V, TC=125℃ 3
Gate-body leakage current, forward IGSSF 100 nA VDS=0V, VGS=30V 3
Gate-body leakage current, reverse IGSSR -100 nA VDS=0V, VGS=-30V 3
Gate Threshold Voltage VGS(th) 2 4 V VDS=VGS, ID=250μA 3
Static Drain-Source On-Resistance RDS(ON) 1.05 1.35 Ω VGS=10V, ID=3.5A, 25℃ 3
Static Drain-Source On-Resistance RDS(ON) 1.84 2.35 Ω VGS=10V, ID=3.5A, 100℃ 3
Static Drain-Source On-Resistance RDS(ON) 2.73 3.4 Ω VGS=10V, ID=3.5A, 150℃ 3
Forward Transconductance gfs 7.5 14 S VDS=40V, ID=7.0A (note 4) 3
Gate resistance Rg 0.8 4 Ω F=1.0MHz, open drain 3
Input capacitance Ciss 1100 1600 pF VDS=25V, VGS=0V, f=1.0MHz 3
Output capacitance Coss 251 300 pF VDS=25V, VGS=0V, f=1.0MHz 3
Reverse transfer capacitance Crss 14 20 pF VDS=25V, VGS=0V, f=1.0MHz 3
Turn-On delay time td(on) 11 31 ns VDD=325V, ID=7A, RG=25Ω (notes 4, 5) 4
Turn-On rise time tr 35 80 ns VDD=325V, ID=7A, RG=25Ω (notes 4, 5) 4
Turn-Off delay time td(off) 46 95 ns VDD=325V, ID=7A, RG=25Ω (notes 4, 5) 4
Turn-Off Fall time tf 40 92 ns VDD=325V, ID=7A, RG=25Ω (notes 4, 5) 4
Total Gate Charge Qg 32 41 nC VDS=520V, ID=7A, VGS=10V (notes 4, 5) 4
Gate-Source charge Qgs 6 15 nC VDS=520V, ID=7A, VGS=10V (notes 4, 5) 4
Gate-Drain charge Qgd 15 40 nC VDS=520V, ID=7A, VGS=10V (notes 4, 5) 4
Maximum Continuous Drain-Source Diode Forward Current IS 7 A 4
Maximum Pulsed Drain-Source Diode Forward Current ISM 28 A 4
Drain-Source Diode Forward Voltage VSD 1.4 V VGS=0V, IS=7.0A 4
Reverse recovery time trr 345 900 ns VGS=0V, IS=7.0A, dIF/dt=100A/μs (note 4) 4
Reverse recovery charge Qrr 3.2 8 μC VGS=0V, IS=7.0A, dIF/dt=100A/μs (note 4) 4
Thermal Resistance, Junction to Case (TO-220MF) Rth(j-c) 2.3 ℃/W JCS7HN65FC (TO-220MF) 4
Thermal Resistance, Junction to Ambient (TO-220MF) Rth(j-A) 35.67 ℃/W JCS7HN65FC (TO-220MF) 4

CAD (KiCad official)

  • Symbol: JCS7HN65FC-220MF
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Jilin Sino Microelectronics datasheet (19 pp, sha256 f1a8dcabd948aa97, retrieved 2026-10-14, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF