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JCS4N80RC

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Jilin Sino Microelectronics MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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JCS4N80RC

Jilin Sino Microelectronics · MOSFETs · DPAK

JCS4N80RC from Jilin Sino Microelectronics, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drive with VGS=10V for the stated RDS(ON), absolute maximum VGSS ±30 V, threshold 2.0 to 4.0 V at ID=250μA.
2 D passive Drain, connected to the exposed mounting tab; VDSS 800 V, continuous ID 4 A at 25℃ and pulsed IDM 16 A.
3 S passive Source; body diode continuous forward current IS 4 A and pulsed ISM 16 A to the drain.

Key specifications

Parameter Value
Manufacturer Jilin Sino Microelectronics
Package DPAK
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (breakdown) BVDSS 800 V ID=250μA, VGS=0V 3
Zero Gate Voltage Drain Current IDSS 5 μA VDS=800V, VGS=0V, TC=25℃ 3
Zero Gate Voltage Drain Current IDSS 100 μA VDS=640V, TC=125℃ 3
Gate-body leakage current, forward IGSSF 100 nA VDS=0V, VGS=30V 3
Gate-body leakage current, reverse IGSSR -100 nA VDS=0V, VGS=-30V 3
Gate Threshold Voltage VGS(th) 2 4 V VDS=VGS, ID=250μA 3
Static Drain-Source On-Resistance RDS(ON) 0.5 1.9 2.6 Ω VGS=10V, ID=2.0A, 25℃ 3
Static Drain-Source On-Resistance RDS(ON) 0.6 3.3 4.5 Ω VGS=10V, ID=2.0A, 100℃ 3
Static Drain-Source On-Resistance RDS(ON) 0.8 4.9 6.5 Ω VGS=10V, ID=2.0A, 150℃ 3
Gate resistance Rg 0.5 6 Ω F=1.0MHZ, open drain 3
Input capacitance Ciss 300 675 880 pF VDS=25V, VGS=0V, f=1.0MHZ 3
Output capacitance Coss 40 78 100 pF VDS=25V, VGS=0V, f=1.0MHZ 3
Reverse transfer capacitance Crss 2 8.8 15 pF VDS=25V, VGS=0V, f=1.0MHZ 3
Turn-On delay time td(on) 18 40 ns VDD=400V, ID=4A, RG=25Ω 4
Turn-On rise time tr 48 100 ns VDD=400V, ID=4A, RG=25Ω 4
Turn-Off delay time td(off) 39 80 ns VDD=400V, ID=4A, RG=25Ω 4
Turn-Off Fall time tf 38 80 ns VDD=400V, ID=4A, RG=25Ω 4
Total Gate Charge Qg 29.5 45 nC VDS=640V, ID=4A, VGS=10V 4
Gate-Source charge Qgs 4.8 12 nC VDS=640V, ID=4A, VGS=10V 4
Gate-Drain charge Qgd 12.8 30 nC VDS=640V, ID=4A, VGS=10V 4
Maximum Continuous Drain-Source Diode Forward Current IS 4 A 4
Maximum Pulsed Drain-Source Diode Forward Current ISM 16 A 4
Drain-Source Diode Forward Voltage VSD 1.5 V VGS=0V, IS=4A 4
Reverse recovery time trr 580 1500 ns VGS=0V, IS=4A, dIF/dt=100A/μs 4
Reverse recovery charge Qrr 3.8 9 μC VGS=0V, IS=4A, dIF/dt=100A/μs 4
Drain-Source Voltage VDSS 800 V 2
Drain Current - continuous ID 4 A TC=25℃ 2
Drain Current - continuous ID 2.48 A TC=100℃ 2
Drain Current - pulse (note 1) IDM 16 A Pulse width limited by maximum junction temperature 2
Gate-Source Voltage VGSS -30 30 V 2
Single Pulsed Avalanche Energy (note 2) EAS 470 mJ L=55mH, IAS=4A, VDD=50V, RG=25Ω, starting TJ=25℃ 2
Avalanche Current (note 1) IAR 4 A 2
Repetitive Avalanche Energy (note 1) EAR 13 mJ 2
Peak Diode Recovery dv/dt (note 3) dv/dt 4 V/ns ISD ≤4A, di/dt ≤200A/μs, VDD≤BVDSS, starting TJ=25℃ 2
Power Dissipation PD 45.8 W TC=25℃ 2
Power Dissipation derating PD 0.37 W/℃ Derate above 25℃ 2
Operating and Storage Temperature Range TJ，TSTG -55 150 ℃ 2
Maximum Lead Temperature for Soldering Purposes TL 300 ℃ 2
Thermal Resistance, Junction to Case Rth(j-c) 2.73 ℃/W JCS4N80RC (DPAK) 4
Thermal Resistance, Junction to Ambient Rth(j-A) 110 ℃/W JCS4N80RC (DPAK) 4

CAD (KiCad official)

  • Symbol: JCS4N80RC
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: DPAK (KiCad packages3D, STEP)
  • 3D model files: jcs4n80rc-etched.step / jcs4n80rc-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); jcs4n80rc.step / jcs4n80rc.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Jilin Sino Microelectronics datasheet (13 pp, sha256 bca451130938e03c, retrieved 2026-10-18, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF