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IXYH50N120C3D1
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IXYS IGBTs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IXYH50N120C3D1
IXYS · IGBTs · TO-247
IXYH50N120C3D1 from IXYS, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal for the IGBT, rated for a continuous VGES of ±20V with a gate threshold VGE(th) of 3.0V to 5.0V. |
| 2 | Collector | passive | Collector terminal, rated for VCES of 1200V with IC25 of 90A at TC = 25°C (chip capability). |
| 3 | Emitter | passive | Emitter terminal, the reference for gate-emitter voltage VGES and the collector-emitter saturation voltage VCE(sat). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | IXYS |
| Package | TO-247 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-emitter threshold voltage | VGE(th) | 3 | 5 | V | IC = 250μA, VCE = VGE | 1 | |
| Collector-emitter breakdown voltage | BVCES | 1200 | V | IC = 250A, VGE = 0V | 1 | ||
| Collector-emitter leakage current | ICES | 50 | A | VCE = VCES, VGE = 0V | 1 | ||
| Collector-emitter leakage current at TJ = 125C | ICES | 500 | μA | VCE = VCES, VGE = 0V, TJ = 125C | 1 | ||
| Gate-emitter leakage current | IGES | 100 | nA | VCE = 0V, VGE = 20V | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | 3.5 | V | IC = 50A, VGE = 15V, Note 1 | 1 | ||
| Collector-emitter saturation voltage at TJ = 150C | VCE(sat) | 4.2 | V | IC = 50A, VGE = 15V, Note 1, TJ = 150C | 1 | ||
| Forward transconductance | gfs | 20 | 32 | S | IC = 50A, VCE = 10V, Note 1 | 2 | |
| Collector-emitter voltage (absolute maximum) | VCES | 1200 | V | TJ = 25°C to 150°C | 1 | ||
| Collector-gate voltage (absolute maximum) | VCGR | 1200 | V | TJ = 25°C to 150°C, RGE = 1M | 1 | ||
| Gate-emitter voltage continuous | VGES | -20 | 20 | V | Continuous | 1 | |
| Gate-emitter voltage transient | VGEM | -30 | 30 | V | Transient | 1 | |
| Collector current DC (chip capability) | IC25 | 90 | A | TC = 25°C (Chip Capability) | 1 | ||
| Collector current | IC100 | 50 | A | TC = 100°C | 1 | ||
| Diode forward current | IF110 | 25 | A | TC = 110°C | 1 | ||
| Collector pulsed current | ICM | 210 | A | TC = 25°C, 1ms | 1 | ||
| Total power dissipation | PC | 625 | W | TC = 25°C | 1 | ||
| Operating junction temperature | TJ | -55 | 150 | °C | 1 | ||
| Maximum junction temperature | TJM | 150 | °C | 1 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 1 | ||
| Maximum lead temperature for soldering | TL | 300 | °C | 1 | |||
| Soldering temperature | TSOLD | 260 | °C | 1.6 mm (0.062in.) from Case for 10s | 1 | ||
| Thermal resistance junction to case (IGBT) | RthJC | 0.2 | °C/W | 2 | |||
| Thermal resistance case to sink | RthCS | 0.21 | °C/W | 2 | |||
| Diode forward voltage | VF | 3 | V | IF = 30A, VGE = 0V, Note 1 | 2 | ||
| Diode forward voltage at TJ = 150C | VF | 1.75 | V | IF = 30A, VGE = 0V, Note 1, TJ = 150C | 2 | ||
| Diode thermal resistance junction to case | RthJC | 0.9 | °C/W | 2 | |||
| Diode peak reverse recovery current | IRM | 9 | A | IF = 30A, VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C, VR = 600V | 2 | ||
| Diode reverse recovery time | trr | 195 | ns | IF = 30A, VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C, VR = 600V | 2 |
CAD (KiCad official)
- Symbol:
IXYH50N120C3D1 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247 (KiCad packages3D, STEP)
- 3D model files:
ixyh50n120c3d1-etched.step/ixyh50n120c3d1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ixyh50n120c3d1.step/ixyh50n120c3d1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: IXYS datasheet (8 pp, sha256
23459f06f73df621, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IXYH50N120C3D1
**IXYS** · IGBTs · TO-247
IXYH50N120C3D1 from IXYS, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal for the IGBT, rated for a continuous VGES of ±20V with a gate threshold VGE(th) of 3.0V to 5.0V. |
| 2 | Collector | passive | Collector terminal, rated for VCES of 1200V with IC25 of 90A at TC = 25°C (chip capability). |
| 3 | Emitter | passive | Emitter terminal, the reference for gate-emitter voltage VGES and the collector-emitter saturation voltage VCE(sat). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | IXYS |
| Package | TO-247 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-emitter threshold voltage | VGE(th) | 3 | | 5 | V | IC = 250μA, VCE = VGE | 1 |
| Collector-emitter breakdown voltage | BVCES | 1200 | | | V | IC = 250A, VGE = 0V | 1 |
| Collector-emitter leakage current | ICES | | | 50 | A | VCE = VCES, VGE = 0V | 1 |
| Collector-emitter leakage current at TJ = 125C | ICES | | | 500 | μA | VCE = VCES, VGE = 0V, TJ = 125C | 1 |
| Gate-emitter leakage current | IGES | | | 100 | nA | VCE = 0V, VGE = 20V | 1 |
| Collector-emitter saturation voltage | VCE(sat) | | | 3.5 | V | IC = 50A, VGE = 15V, Note 1 | 1 |
| Collector-emitter saturation voltage at TJ = 150C | VCE(sat) | | | 4.2 | V | IC = 50A, VGE = 15V, Note 1, TJ = 150C | 1 |
| Forward transconductance | gfs | 20 | 32 | | S | IC = 50A, VCE = 10V, Note 1 | 2 |
| Collector-emitter voltage (absolute maximum) | VCES | | | 1200 | V | TJ = 25°C to 150°C | 1 |
| Collector-gate voltage (absolute maximum) | VCGR | | | 1200 | V | TJ = 25°C to 150°C, RGE = 1M | 1 |
| Gate-emitter voltage continuous | VGES | -20 | | 20 | V | Continuous | 1 |
| Gate-emitter voltage transient | VGEM | -30 | | 30 | V | Transient | 1 |
| Collector current DC (chip capability) | IC25 | | | 90 | A | TC = 25°C (Chip Capability) | 1 |
| Collector current | IC100 | | | 50 | A | TC = 100°C | 1 |
| Diode forward current | IF110 | | | 25 | A | TC = 110°C | 1 |
| Collector pulsed current | ICM | | | 210 | A | TC = 25°C, 1ms | 1 |
| Total power dissipation | PC | | | 625 | W | TC = 25°C | 1 |
| Operating junction temperature | TJ | -55 | | 150 | °C | | 1 |
| Maximum junction temperature | TJM | | | 150 | °C | | 1 |
| Storage temperature | Tstg | -55 | | 150 | °C | | 1 |
| Maximum lead temperature for soldering | TL | | | 300 | °C | | 1 |
| Soldering temperature | TSOLD | | | 260 | °C | 1.6 mm (0.062in.) from Case for 10s | 1 |
| Thermal resistance junction to case (IGBT) | RthJC | | 0.2 | | °C/W | | 2 |
| Thermal resistance case to sink | RthCS | | 0.21 | | °C/W | | 2 |
| Diode forward voltage | VF | | | 3 | V | IF = 30A, VGE = 0V, Note 1 | 2 |
| Diode forward voltage at TJ = 150C | VF | | | 1.75 | V | IF = 30A, VGE = 0V, Note 1, TJ = 150C | 2 |
| Diode thermal resistance junction to case | RthJC | | | 0.9 | °C/W | | 2 |
| Diode peak reverse recovery current | IRM | | | 9 | A | IF = 30A, VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C, VR = 600V | 2 |
| Diode reverse recovery time | trr | | | 195 | ns | IF = 30A, VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C, VR = 600V | 2 |
## CAD (KiCad official)
- Symbol: `IXYH50N120C3D1`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247 (KiCad packages3D, STEP)
- 3D model files: `ixyh50n120c3d1-etched.step` / `ixyh50n120c3d1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ixyh50n120c3d1.step` / `ixyh50n120c3d1.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [IXYS datasheet](docs/ixyh50n120c3d1-datasheet.pdf) (8 pp, sha256 `23459f06f73df621`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ixyh50n120c3d1-datasheet.pdf)