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IXYH50N120C3D1

Public Made by Adom

by adom

IXYS IGBTs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IXYH50N120C3D1

IXYS · IGBTs · TO-247

IXYH50N120C3D1 from IXYS, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal for the IGBT, rated for a continuous VGES of ±20V with a gate threshold VGE(th) of 3.0V to 5.0V.
2 Collector passive Collector terminal, rated for VCES of 1200V with IC25 of 90A at TC = 25°C (chip capability).
3 Emitter passive Emitter terminal, the reference for gate-emitter voltage VGES and the collector-emitter saturation voltage VCE(sat).

Key specifications

Parameter Value
Manufacturer IXYS
Package TO-247
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-emitter threshold voltage VGE(th) 3 5 V IC = 250μA, VCE = VGE 1
Collector-emitter breakdown voltage BVCES 1200 V IC = 250A, VGE = 0V 1
Collector-emitter leakage current ICES 50 A VCE = VCES, VGE = 0V 1
Collector-emitter leakage current at TJ = 125C ICES 500 μA VCE = VCES, VGE = 0V, TJ = 125C 1
Gate-emitter leakage current IGES 100 nA VCE = 0V, VGE = 20V 1
Collector-emitter saturation voltage VCE(sat) 3.5 V IC = 50A, VGE = 15V, Note 1 1
Collector-emitter saturation voltage at TJ = 150C VCE(sat) 4.2 V IC = 50A, VGE = 15V, Note 1, TJ = 150C 1
Forward transconductance gfs 20 32 S IC = 50A, VCE = 10V, Note 1 2
Collector-emitter voltage (absolute maximum) VCES 1200 V TJ = 25°C to 150°C 1
Collector-gate voltage (absolute maximum) VCGR 1200 V TJ = 25°C to 150°C, RGE = 1M 1
Gate-emitter voltage continuous VGES -20 20 V Continuous 1
Gate-emitter voltage transient VGEM -30 30 V Transient 1
Collector current DC (chip capability) IC25 90 A TC = 25°C (Chip Capability) 1
Collector current IC100 50 A TC = 100°C 1
Diode forward current IF110 25 A TC = 110°C 1
Collector pulsed current ICM 210 A TC = 25°C, 1ms 1
Total power dissipation PC 625 W TC = 25°C 1
Operating junction temperature TJ -55 150 °C 1
Maximum junction temperature TJM 150 °C 1
Storage temperature Tstg -55 150 °C 1
Maximum lead temperature for soldering TL 300 °C 1
Soldering temperature TSOLD 260 °C 1.6 mm (0.062in.) from Case for 10s 1
Thermal resistance junction to case (IGBT) RthJC 0.2 °C/W 2
Thermal resistance case to sink RthCS 0.21 °C/W 2
Diode forward voltage VF 3 V IF = 30A, VGE = 0V, Note 1 2
Diode forward voltage at TJ = 150C VF 1.75 V IF = 30A, VGE = 0V, Note 1, TJ = 150C 2
Diode thermal resistance junction to case RthJC 0.9 °C/W 2
Diode peak reverse recovery current IRM 9 A IF = 30A, VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C, VR = 600V 2
Diode reverse recovery time trr 195 ns IF = 30A, VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C, VR = 600V 2

CAD (KiCad official)

  • Symbol: IXYH50N120C3D1
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247 (KiCad packages3D, STEP)
  • 3D model files: ixyh50n120c3d1-etched.step / ixyh50n120c3d1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ixyh50n120c3d1.step / ixyh50n120c3d1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: IXYS datasheet (8 pp, sha256 23459f06f73df621, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF