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IXTU12N06T-VB
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VBsemi Elec MOSFETs, TO-251. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IXTU12N06T-VB
VBsemi Elec · MOSFETs · TO-251
IXTU12N06T-VB from VBsemi Elec, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; the datasheet rates gate-source voltage VGS at ±20 V. |
| 2 | D | passive | Drain terminal of the N-channel MOSFET; drain-source voltage VDS is rated at 60 V, and the datasheet lists junction-to-case thermal resistance to the drain. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, the reference for gate-source voltage and body-diode ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-251 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Pulsed Drain Current | IDM | 100 | A | 1 | |||
| Avalanche Current | IAS | 40 | A | 1 | |||
| Single Avalanche Energy | EAS | 80 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation | PD | 59.5 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 2.7 | W | TA = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient (PCB Mount) | RthJA | 46 | °C/W | PCB mount | 1 | ||
| Junction-to-Case (Drain) | RthJC | 2.1 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | VDS | 60 | V | VDS = 0 V, ID = 250 µA | 2 | ||
| Gate-Body Leakage | IGSS | -250 | 250 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 60 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 50 | µA | VDS = 60 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | µA | VDS = 60 V, VGS = 0 V, TJ = 150 °C | 2 | ||
| On-State Drain Current | ID(on) | 50 | A | VDS ≥ 10 V, VGS = 10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.032 | Ω | VGS = 10 V, ID = 12 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.037 | Ω | VGS = 4.5 V, ID = 10 A | 2 | ||
| Gate Resistance | Rg | 0.4 | 2 | 4 | Ω | f = 1 MHz | 2 |
| Forward Voltage | VSD | 0.75 | 1.5 | V | IF = 10 A, VGS = 0 V | 2 | |
| Continuous Current (body diode) | IS | 50 | A | TC = 25 °C | 2 | ||
| Pulsed Current (body diode) | ISM | 100 | A | 2 |
CAD (KiCad official)
- Symbol:
IXTU12N06T-VB - Footprint:
Package_TO_SOT_THT:TO-251-3_Vertical - 3D model: TO-251 (KiCad packages3D, STEP)
- 3D model files:
ixtu12n06t-vb-etched.step/ixtu12n06t-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ixtu12n06t-vb.step/ixtu12n06t-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
d8dc5eeae3c39b04, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IXTU12N06T-VB
**VBsemi Elec** · MOSFETs · TO-251
IXTU12N06T-VB from VBsemi Elec, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; the datasheet rates gate-source voltage VGS at ±20 V. |
| 2 | D | passive | Drain terminal of the N-channel MOSFET; drain-source voltage VDS is rated at 60 V, and the datasheet lists junction-to-case thermal resistance to the drain. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, the reference for gate-source voltage and body-diode ratings. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-251 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 60 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Pulsed Drain Current | IDM | | | 100 | A | | 1 |
| Avalanche Current | IAS | | | 40 | A | | 1 |
| Single Avalanche Energy | EAS | | | 80 | mJ | L = 0.1 mH | 1 |
| Maximum Power Dissipation | PD | | | 59.5 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD | | | 2.7 | W | TA = 25 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Junction-to-Ambient (PCB Mount) | RthJA | | | 46 | °C/W | PCB mount | 1 |
| Junction-to-Case (Drain) | RthJC | | | 2.1 | °C/W | | 1 |
| Drain-Source Breakdown Voltage | VDS | 60 | | | V | VDS = 0 V, ID = 250 µA | 2 |
| Gate-Body Leakage | IGSS | -250 | | 250 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS = 60 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 50 | µA | VDS = 60 V, VGS = 0 V, TJ = 125 °C | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 250 | µA | VDS = 60 V, VGS = 0 V, TJ = 150 °C | 2 |
| On-State Drain Current | ID(on) | 50 | | | A | VDS ≥ 10 V, VGS = 10 V | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 0.032 | Ω | VGS = 10 V, ID = 12 A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 0.037 | Ω | VGS = 4.5 V, ID = 10 A | 2 |
| Gate Resistance | Rg | 0.4 | 2 | 4 | Ω | f = 1 MHz | 2 |
| Forward Voltage | VSD | | 0.75 | 1.5 | V | IF = 10 A, VGS = 0 V | 2 |
| Continuous Current (body diode) | IS | | | 50 | A | TC = 25 °C | 2 |
| Pulsed Current (body diode) | ISM | | | 100 | A | | 2 |
## CAD (KiCad official)
- Symbol: `IXTU12N06T-VB`
- Footprint: `Package_TO_SOT_THT:TO-251-3_Vertical`
- 3D model: TO-251 (KiCad packages3D, STEP)
- 3D model files: `ixtu12n06t-vb-etched.step` / `ixtu12n06t-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ixtu12n06t-vb.step` / `ixtu12n06t-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/ixtu12n06t-vb-datasheet.pdf) (7 pp, sha256 `d8dc5eeae3c39b04`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `off` (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ixtu12n06t-vb-datasheet.pdf)