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IXTU12N06T-VB

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VBsemi Elec MOSFETs, TO-251. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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IXTU12N06T-VB

VBsemi Elec · MOSFETs · TO-251

IXTU12N06T-VB from VBsemi Elec, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET; the datasheet rates gate-source voltage VGS at ±20 V.
2 D passive Drain terminal of the N-channel MOSFET; drain-source voltage VDS is rated at 60 V, and the datasheet lists junction-to-case thermal resistance to the drain.
3 S passive Source terminal of the N-channel MOSFET, the reference for gate-source voltage and body-diode ratings.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-251
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Pulsed Drain Current IDM 100 A 1
Avalanche Current IAS 40 A 1
Single Avalanche Energy EAS 80 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 59.5 W TC = 25 °C 1
Maximum Power Dissipation PD 2.7 W TA = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient (PCB Mount) RthJA 46 °C/W PCB mount 1
Junction-to-Case (Drain) RthJC 2.1 °C/W 1
Drain-Source Breakdown Voltage VDS 60 V VDS = 0 V, ID = 250 µA 2
Gate-Body Leakage IGSS -250 250 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 50 µA VDS = 60 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 250 µA VDS = 60 V, VGS = 0 V, TJ = 150 °C 2
On-State Drain Current ID(on) 50 A VDS ≥ 10 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.032 Ω VGS = 10 V, ID = 12 A 2
Drain-Source On-State Resistance RDS(on) 0.037 Ω VGS = 4.5 V, ID = 10 A 2
Gate Resistance Rg 0.4 2 4 Ω f = 1 MHz 2
Forward Voltage VSD 0.75 1.5 V IF = 10 A, VGS = 0 V 2
Continuous Current (body diode) IS 50 A TC = 25 °C 2
Pulsed Current (body diode) ISM 100 A 2

CAD (KiCad official)

  • Symbol: IXTU12N06T-VB
  • Footprint: Package_TO_SOT_THT:TO-251-3_Vertical
  • 3D model: TO-251 (KiCad packages3D, STEP)
  • 3D model files: ixtu12n06t-vb-etched.step / ixtu12n06t-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ixtu12n06t-vb.step / ixtu12n06t-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 d8dc5eeae3c39b04, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF