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IXTP24N65X2M

Public Made by Adom

by adom

IXYS MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IXTP24N65X2M

IXYS · MOSFETs · TO-220

IXTP24N65X2M from IXYS, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; VGSS is ±30V continuous and ±40V transient, with VGS(th) of 3.0V min to 5.0V max at VDS = VGS, ID = 250µA.
2 D passive Drain terminal; VDSS is 650V, with continuous drain current ID25 of 24A at TC = 25°C and pulsed IDM of 48A.
3 S passive Source terminal; the body diode carries continuous IS of 24A and pulsed ISM of 96A, with VSD max of 1.4V.

Key specifications

Parameter Value
Manufacturer IXYS
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage BVDSS 650 V VGS = 0V, ID = 250µA 1
Gate threshold voltage VGS(th) 3 5 V VDS = VGS, ID = 250µA 1
Gate-source leakage IGSS 100 nA VGS = 30V, VDS = 0V 1
Drain leakage current IDSS 5 µA VDS = VDSS, VGS = 0V 1
Drain leakage current IDSS 100 µA VDS = VDSS, VGS = 0V, TJ = 125C 1
Drain-source on-resistance RDS(on) 145 mΩ VGS = 10V, ID = 12A, Note 1 1
Drain-source voltage VDSS 650 V TJ = 25C to 150C 1
Drain-gate voltage VDGR 650 V TJ = 25C to 150C, RGS = 1MΩ 1
Gate-source voltage continuous VGSS 30 V Continuous 1
Gate-source voltage transient VGSM 40 V Transient 1
Continuous drain current ID25 24 A TC = 25C, Limited by TJM 1
Pulsed drain current IDM 48 A TC = 25C, Pulse Width Limited by TJM 1
Avalanche current IA 12 A TC = 25C 1
Avalanche energy EAS 600 mJ TC = 25C 1
Peak diode recovery dv/dt dv/dt 15 V/ns IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 1
Power dissipation PD 37 W TC = 25C 1
Junction temperature TJ -55 150 C 1
Maximum junction temperature TJM 150 C 1
Storage temperature Tstg -55 150 C 1
Maximum lead temperature for soldering TL 300 °C Maximum Lead Temperature for Soldering 1
Soldering temperature TSOLD 260 °C 1.6 mm (0.062in.) from Case for 10s 1
Isolation voltage VISOL 2500 V~ 50/60 Hz, 1 Minute 1
Mounting torque Md 1.13 Nm 1.13 / 10 Nm/lb.in 1
Source-drain continuous current IS 24 A VGS = 0V 2
Source-drain pulsed current ISM 96 A Repetitive, pulse Width Limited by TJM 2
Diode forward voltage VSD 1.4 V IF = IS, VGS = 0V, Note 1 2
Transconductance gfs 13 22 S VDS = 10V, ID = 12A, Note 1 2
Junction-to-case thermal resistance RthJC 3.37 C/W 2
Case-to-sink thermal resistance RthCS 0.5 C/W 2
Reverse recovery time trr 390 ns IF = 12A, -di/dt = 100A/µs, VR = 100V 2
Reverse recovery charge QRM 3.3 µC IF = 12A, -di/dt = 100A/µs, VR = 100V 2
Reverse recovery current IRM 17 A IF = 12A, -di/dt = 100A/µs, VR = 100V 2
Gate input resistance RGi 1.1 Ω Gate Input Resistance 2
Input capacitance Ciss 2060 pF VGS = 0V, VDS = 25V, f = 1MHz 2
Output capacitance Coss 1470 pF VGS = 0V, VDS = 25V, f = 1MHz 2
Reverse transfer capacitance Crss 1.2 pF VGS = 0V, VDS = 25V, f = 1MHz 2
Effective output capacitance, energy related Co(er) 83 pF VGS = 0V, VDS = 0.8 • VDSS 2
Effective output capacitance, time related Co(tr) 336 pF VGS = 0V, VDS = 0.8 • VDSS 2
Turn-on delay time td(on) 20 ns VGS = 10V, VDS = 0.5 • VDSS, ID = 12A, RG = 10Ω (External) 2
Rise time tr 25 ns VGS = 10V, VDS = 0.5 • VDSS, ID = 12A, RG = 10Ω (External) 2
Turn-off delay time td(off) 50 ns VGS = 10V, VDS = 0.5 • VDSS, ID = 12A, RG = 10Ω (External) 2
Fall time tf 19 ns VGS = 10V, VDS = 0.5 • VDSS, ID = 12A, RG = 10Ω (External) 2
Total gate charge Qg(on) 36 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 12A 2
Gate-source charge Qgs 9 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 12A 2
Gate-drain charge Qgd 13 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 12A 2

CAD (KiCad official)

  • Symbol: IXTP24N65X2M
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: ixtp24n65x2m-etched.step / ixtp24n65x2m-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ixtp24n65x2m.step / ixtp24n65x2m.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: IXYS datasheet (6 pp, sha256 5364bdfd637d715f, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF