component
IXTP24N65X2M
Public Made by Adomby adom
IXYS MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIXTP24N65X2M
IXYS · MOSFETs · TO-220
IXTP24N65X2M from IXYS, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; VGSS is ±30V continuous and ±40V transient, with VGS(th) of 3.0V min to 5.0V max at VDS = VGS, ID = 250µA. |
| 2 | D | passive | Drain terminal; VDSS is 650V, with continuous drain current ID25 of 24A at TC = 25°C and pulsed IDM of 48A. |
| 3 | S | passive | Source terminal; the body diode carries continuous IS of 24A and pulsed ISM of 96A, with VSD max of 1.4V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | IXYS |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 650 | V | VGS = 0V, ID = 250µA | 1 | ||
| Gate threshold voltage | VGS(th) | 3 | 5 | V | VDS = VGS, ID = 250µA | 1 | |
| Gate-source leakage | IGSS | 100 | nA | VGS = 30V, VDS = 0V | 1 | ||
| Drain leakage current | IDSS | 5 | µA | VDS = VDSS, VGS = 0V | 1 | ||
| Drain leakage current | IDSS | 100 | µA | VDS = VDSS, VGS = 0V, TJ = 125C | 1 | ||
| Drain-source on-resistance | RDS(on) | 145 | mΩ | VGS = 10V, ID = 12A, Note 1 | 1 | ||
| Drain-source voltage | VDSS | 650 | V | TJ = 25C to 150C | 1 | ||
| Drain-gate voltage | VDGR | 650 | V | TJ = 25C to 150C, RGS = 1MΩ | 1 | ||
| Gate-source voltage continuous | VGSS | 30 | V | Continuous | 1 | ||
| Gate-source voltage transient | VGSM | 40 | V | Transient | 1 | ||
| Continuous drain current | ID25 | 24 | A | TC = 25C, Limited by TJM | 1 | ||
| Pulsed drain current | IDM | 48 | A | TC = 25C, Pulse Width Limited by TJM | 1 | ||
| Avalanche current | IA | 12 | A | TC = 25C | 1 | ||
| Avalanche energy | EAS | 600 | mJ | TC = 25C | 1 | ||
| Peak diode recovery dv/dt | dv/dt | 15 | V/ns | IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C | 1 | ||
| Power dissipation | PD | 37 | W | TC = 25C | 1 | ||
| Junction temperature | TJ | -55 | 150 | C | 1 | ||
| Maximum junction temperature | TJM | 150 | C | 1 | |||
| Storage temperature | Tstg | -55 | 150 | C | 1 | ||
| Maximum lead temperature for soldering | TL | 300 | °C | Maximum Lead Temperature for Soldering | 1 | ||
| Soldering temperature | TSOLD | 260 | °C | 1.6 mm (0.062in.) from Case for 10s | 1 | ||
| Isolation voltage | VISOL | 2500 | V~ | 50/60 Hz, 1 Minute | 1 | ||
| Mounting torque | Md | 1.13 | Nm | 1.13 / 10 Nm/lb.in | 1 | ||
| Source-drain continuous current | IS | 24 | A | VGS = 0V | 2 | ||
| Source-drain pulsed current | ISM | 96 | A | Repetitive, pulse Width Limited by TJM | 2 | ||
| Diode forward voltage | VSD | 1.4 | V | IF = IS, VGS = 0V, Note 1 | 2 | ||
| Transconductance | gfs | 13 | 22 | S | VDS = 10V, ID = 12A, Note 1 | 2 | |
| Junction-to-case thermal resistance | RthJC | 3.37 | C/W | 2 | |||
| Case-to-sink thermal resistance | RthCS | 0.5 | C/W | 2 | |||
| Reverse recovery time | trr | 390 | ns | IF = 12A, -di/dt = 100A/µs, VR = 100V | 2 | ||
| Reverse recovery charge | QRM | 3.3 | µC | IF = 12A, -di/dt = 100A/µs, VR = 100V | 2 | ||
| Reverse recovery current | IRM | 17 | A | IF = 12A, -di/dt = 100A/µs, VR = 100V | 2 | ||
| Gate input resistance | RGi | 1.1 | Ω | Gate Input Resistance | 2 | ||
| Input capacitance | Ciss | 2060 | pF | VGS = 0V, VDS = 25V, f = 1MHz | 2 | ||
| Output capacitance | Coss | 1470 | pF | VGS = 0V, VDS = 25V, f = 1MHz | 2 | ||
| Reverse transfer capacitance | Crss | 1.2 | pF | VGS = 0V, VDS = 25V, f = 1MHz | 2 | ||
| Effective output capacitance, energy related | Co(er) | 83 | pF | VGS = 0V, VDS = 0.8 • VDSS | 2 | ||
| Effective output capacitance, time related | Co(tr) | 336 | pF | VGS = 0V, VDS = 0.8 • VDSS | 2 | ||
| Turn-on delay time | td(on) | 20 | ns | VGS = 10V, VDS = 0.5 • VDSS, ID = 12A, RG = 10Ω (External) | 2 | ||
| Rise time | tr | 25 | ns | VGS = 10V, VDS = 0.5 • VDSS, ID = 12A, RG = 10Ω (External) | 2 | ||
| Turn-off delay time | td(off) | 50 | ns | VGS = 10V, VDS = 0.5 • VDSS, ID = 12A, RG = 10Ω (External) | 2 | ||
| Fall time | tf | 19 | ns | VGS = 10V, VDS = 0.5 • VDSS, ID = 12A, RG = 10Ω (External) | 2 | ||
| Total gate charge | Qg(on) | 36 | nC | VGS = 10V, VDS = 0.5 • VDSS, ID = 12A | 2 | ||
| Gate-source charge | Qgs | 9 | nC | VGS = 10V, VDS = 0.5 • VDSS, ID = 12A | 2 | ||
| Gate-drain charge | Qgd | 13 | nC | VGS = 10V, VDS = 0.5 • VDSS, ID = 12A | 2 |
CAD (KiCad official)
- Symbol:
IXTP24N65X2M - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
ixtp24n65x2m-etched.step/ixtp24n65x2m-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ixtp24n65x2m.step/ixtp24n65x2m.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: IXYS datasheet (6 pp, sha256
5364bdfd637d715f, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).