# IXTA1N120P

**Littelfuse/IXYS** · MOSFETs · TO-263

IXTA1N120P from Littelfuse/IXYS, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; maximum gate-source voltage is ±20 V continuous and ±30 V transient, with gate threshold VGS(th) of 2.5 V min to 4.5 V max. |
| 2 | D | passive | Drain (also connected to the TAB); VDSS is 1200 V and continuous drain current ID25 is 1.0 A at TC = 25°C. |
| 3 | S | passive | Source; continuous source-drain diode current IS is 1.0 A with VGS = 0 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Littelfuse/IXYS |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 1200 | V | TJ = 25°C to 150°C | 1 |
| Drain-Gate Voltage | VDGR |  |  | 1200 | V | TJ = 25°C to 150°C, RGS = 1MΩ | 1 |
| Gate-Source Voltage Continuous | VGSS | -20 |  | 20 | V | Continuous | 1 |
| Gate-Source Voltage Transient | VGSM | -30 |  | 30 | V | Transient | 1 |
| Continuous Drain Current | ID25 |  |  | 1 | A | TC = 25°C | 1 |
| Pulsed Drain Current | IDM |  |  | 1.8 | A | TC = 25°C, pulse width limited by TJM | 1 |
| Avalanche Current | IA |  |  | 1 | A | TC = 25°C | 1 |
| Repetitive Avalanche Energy | EAR |  |  | 10 | mJ | TC = 25°C | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 100 | mJ | TC = 25°C | 1 |
| Peak Diode Recovery dV/dt | dV/dt |  |  | 10 | V/ns | IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C | 1 |
| Power Dissipation | PD |  |  | 63 | W | TC = 25°C | 1 |
| Operating Junction Temperature | TJ | -55 |  | 150 | °C |  | 1 |
| Max Junction Temperature | TJM |  |  | 150 | °C |  | 1 |
| Storage Temperature | Tstg | -55 |  | 150 | °C |  | 1 |
| Lead Temperature | TL |  |  | 300 | °C | 1.6mm (0.062) from case for 10s | 1 |
| Soldering Temperature | TSOLD |  |  | 260 | °C | Plastic body for 10s | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 1200 |  |  | V | VGS = 0V, ID = 250μA | 1 |
| Gate Threshold Voltage | VGS(th) | 2.5 |  | 4.5 | V | VDS = VGS, ID = 50μA | 1 |
| Gate Leakage Current | IGSS | -50 |  | 50 | nA | VGS = ±20V, VDS = 0V | 1 |
| Drain Leakage Current | IDSS |  |  | 5 | μA | VDS = VDSS, VGS = 0V | 1 |
| Drain Leakage Current | IDSS |  |  | 200 | μA | VDS = VDSS, VGS = 0V, TJ = 125°C | 1 |
| Drain-Source On-Resistance | RDS(on) |  | 15.5 | 20 | Ω | VGS = 10V, ID = 0.5 • ID25, Note 1 | 1 |
| Transconductance | gfs | 0.55 | 0.92 |  | S | VDS = 30V, ID = 0.5 • ID25, Note 1 | 2 |
| Thermal Resistance Junction-to-Case | RthJC |  |  | 2 | °C/W |  | 2 |
| Continuous Source Current | IS |  |  | 1 | A | VGS = 0V | 2 |
| Source Current Repetitive | ISM |  |  | 3 | A | Repetitive | 2 |
| Diode Forward Voltage | VSD |  |  | 1.5 | V | IF = IS, VGS = 0V, Note 1 | 2 |
| Reverse Recovery Time | trr |  |  | 900 | ns | IF = 1.0A, -di/dt = 100A/μs, VR = 100V, VGS = 0V | 2 |
| Input Capacitance | Ciss |  | 550 |  | pF | VGS = 0V, VDS = 25V, f = 1MHz | 2 |
| Output Capacitance | Coss |  | 25 |  | pF | VGS = 0V, VDS = 25V, f = 1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 5.4 |  | pF | VGS = 0V, VDS = 25V, f = 1MHz | 2 |
| Turn-On Delay Time | td(on) |  | 20 |  | ns | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 30Ω (External) | 2 |
| Rise Time | tr |  | 28 |  | ns | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 30Ω (External) | 2 |
| Turn-Off Delay Time | td(off) |  | 54 |  | ns | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 30Ω (External) | 2 |
| Fall Time | tf |  | 27 |  | ns | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 30Ω (External) | 2 |
| Total Gate Charge | Qg(on) |  | 17.6 |  | nC | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 | 2 |
| Gate-Source Charge | Qgs |  | 3.5 |  | nC | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 | 2 |
| Gate-Drain Charge | Qgd |  | 10.6 |  | nC | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 | 2 |

## CAD (KiCad official)

- Symbol: `IXTA1N120P`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `ixta1n120p-etched.step` / `ixta1n120p-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ixta1n120p.step` / `ixta1n120p.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Littelfuse/IXYS datasheet](docs/ixta1n120p-datasheet.pdf) (4 pp, sha256 `cb56ed84374f2367`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ixta1n120p-datasheet.pdf)