component
IXTA1N120P
Public Made by Adomby adom
Littelfuse/IXYS MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 13d ago |
| viewers | 13d ago |
| ixta1n120p-etched.glb | 13d ago |
| ixta1n120p-etched.step | 13d ago |
| ixta1n120p-hero.glb | 13d ago |
| ixta1n120p-hero.overlay.json | 13d ago |
| ixta1n120p.glb | 13d ago |
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| ixta1n120p.step | 13d ago |
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| README.md | 13d ago |
IXTA1N120P
Littelfuse/IXYS · MOSFETs · TO-263
IXTA1N120P from Littelfuse/IXYS, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; maximum gate-source voltage is ±20 V continuous and ±30 V transient, with gate threshold VGS(th) of 2.5 V min to 4.5 V max. |
| 2 | D | passive | Drain (also connected to the TAB); VDSS is 1200 V and continuous drain current ID25 is 1.0 A at TC = 25°C. |
| 3 | S | passive | Source; continuous source-drain diode current IS is 1.0 A with VGS = 0 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Littelfuse/IXYS |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 1200 | V | TJ = 25°C to 150°C | 1 | ||
| Drain-Gate Voltage | VDGR | 1200 | V | TJ = 25°C to 150°C, RGS = 1MΩ | 1 | ||
| Gate-Source Voltage Continuous | VGSS | -20 | 20 | V | Continuous | 1 | |
| Gate-Source Voltage Transient | VGSM | -30 | 30 | V | Transient | 1 | |
| Continuous Drain Current | ID25 | 1 | A | TC = 25°C | 1 | ||
| Pulsed Drain Current | IDM | 1.8 | A | TC = 25°C, pulse width limited by TJM | 1 | ||
| Avalanche Current | IA | 1 | A | TC = 25°C | 1 | ||
| Repetitive Avalanche Energy | EAR | 10 | mJ | TC = 25°C | 1 | ||
| Single Pulse Avalanche Energy | EAS | 100 | mJ | TC = 25°C | 1 | ||
| Peak Diode Recovery dV/dt | dV/dt | 10 | V/ns | IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C | 1 | ||
| Power Dissipation | PD | 63 | W | TC = 25°C | 1 | ||
| Operating Junction Temperature | TJ | -55 | 150 | °C | 1 | ||
| Max Junction Temperature | TJM | 150 | °C | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | °C | 1 | ||
| Lead Temperature | TL | 300 | °C | 1.6mm (0.062) from case for 10s | 1 | ||
| Soldering Temperature | TSOLD | 260 | °C | Plastic body for 10s | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 1200 | V | VGS = 0V, ID = 250μA | 1 | ||
| Gate Threshold Voltage | VGS(th) | 2.5 | 4.5 | V | VDS = VGS, ID = 50μA | 1 | |
| Gate Leakage Current | IGSS | -50 | 50 | nA | VGS = ±20V, VDS = 0V | 1 | |
| Drain Leakage Current | IDSS | 5 | μA | VDS = VDSS, VGS = 0V | 1 | ||
| Drain Leakage Current | IDSS | 200 | μA | VDS = VDSS, VGS = 0V, TJ = 125°C | 1 | ||
| Drain-Source On-Resistance | RDS(on) | 15.5 | 20 | Ω | VGS = 10V, ID = 0.5 • ID25, Note 1 | 1 | |
| Transconductance | gfs | 0.55 | 0.92 | S | VDS = 30V, ID = 0.5 • ID25, Note 1 | 2 | |
| Thermal Resistance Junction-to-Case | RthJC | 2 | °C/W | 2 | |||
| Continuous Source Current | IS | 1 | A | VGS = 0V | 2 | ||
| Source Current Repetitive | ISM | 3 | A | Repetitive | 2 | ||
| Diode Forward Voltage | VSD | 1.5 | V | IF = IS, VGS = 0V, Note 1 | 2 | ||
| Reverse Recovery Time | trr | 900 | ns | IF = 1.0A, -di/dt = 100A/μs, VR = 100V, VGS = 0V | 2 | ||
| Input Capacitance | Ciss | 550 | pF | VGS = 0V, VDS = 25V, f = 1MHz | 2 | ||
| Output Capacitance | Coss | 25 | pF | VGS = 0V, VDS = 25V, f = 1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 5.4 | pF | VGS = 0V, VDS = 25V, f = 1MHz | 2 | ||
| Turn-On Delay Time | td(on) | 20 | ns | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 30Ω (External) | 2 | ||
| Rise Time | tr | 28 | ns | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 30Ω (External) | 2 | ||
| Turn-Off Delay Time | td(off) | 54 | ns | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 30Ω (External) | 2 | ||
| Fall Time | tf | 27 | ns | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 30Ω (External) | 2 | ||
| Total Gate Charge | Qg(on) | 17.6 | nC | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 | 2 | ||
| Gate-Source Charge | Qgs | 3.5 | nC | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 | 2 | ||
| Gate-Drain Charge | Qgd | 10.6 | nC | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 | 2 |
CAD (KiCad official)
- Symbol:
IXTA1N120P - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
ixta1n120p-etched.step/ixta1n120p-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ixta1n120p.step/ixta1n120p.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Littelfuse/IXYS datasheet (4 pp, sha256
cb56ed84374f2367, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).