# IXFP22N65X2M

**IXYS** · MOSFETs · TO-220

IXFP22N65X2M from IXYS, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; continuous VGSS is limited to 30 V and transient VGSM to 40 V per the maximum ratings. |
| 2 | Drain | passive | Drain terminal; VDSS is 650 V and ID25 is 22 A at TC = 25°C, limited by TJM. |
| 3 | Source | passive | Source terminal; repetitive pulse source-drain current ISM is 88 A, limited by TJM. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | IXYS |
| Package | TO-220 |
| Category | Transistors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 650 |  |  | V | VGS = 0V, ID = 250µA | 1 |
| Gate threshold voltage | VGS(th) | 3.5 |  | 5 | V | VDS = VGS, ID = 1.5mA | 1 |
| Gate-source leakage current | IGSS |  |  | 100 | nA | VGS = 30V, VDS = 0V | 1 |
| Zero gate voltage drain current | IDSS |  |  | 10 | A | VDS = VDSS, VGS = 0V | 1 |
| Zero gate voltage drain current at TJ=125C | IDSS |  |  | 1.5 | mA | TJ = 125C | 1 |
| Static drain-source on resistance | RDS(on) |  |  | 145 | mΩ | VGS = 10V, ID = 11A, Note 1 | 1 |
| Forward transconductance | gfs | 8 | 22 |  | S | VDS = 10V, ID = 11A, Note 1 | 2 |
| Continuous source current | IS |  |  | 22 | A | VGS = 0V | 2 |
| Pulsed source current | ISM |  |  | 88 | A | Repetitive, Pulse Width Limited by TJM | 2 |
| Diode forward voltage | VSD |  |  | 1.4 | V | IF = IS, VGS = 0V, Note 1 | 2 |
| Thermal resistance junction to case | RthJC |  |  | 3.37 | C/W |  | 2 |
| Thermal resistance case to sink | RthCS |  |  | 0.5 | C/W |  | 2 |
| Drain-source voltage | VDSS |  |  | 650 | V | TJ = 25C to 150C | 1 |
| Drain-gate voltage | VDGR |  |  | 650 | V | TJ = 25C to 150C, RGS = 1M | 1 |
| Continuous gate-source voltage | VGSS |  |  | 30 | V | Continuous | 1 |
| Transient gate-source voltage | VGSM |  |  | 40 | V | Transient | 1 |
| Continuous drain current | ID25 |  |  | 22 | A | TC = 25C, Limited by TJM | 1 |
| Pulsed drain current | IDM |  |  | 44 | A | TC = 25C, Pulse Width Limited by TJM | 1 |
| Avalanche current | IA |  |  | 5 | A | TC = 25C | 1 |
| Single pulse avalanche energy | EAS |  |  | 1 | J | TC = 25C | 1 |
| Peak diode recovery dv/dt | dv/dt |  |  | 50 | V/ns | IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C | 1 |
| Total power dissipation | PD |  |  | 37 | W | TC = 25C | 1 |
| Operating junction temperature | TJ | -55 |  | 150 | C |  | 1 |
| Maximum junction temperature | TJM |  |  | 150 | C |  | 1 |
| Storage temperature | Tstg | -55 |  | 150 | C |  | 1 |
| Maximum lead temperature for soldering | TL |  |  | 300 | °C | Maximum Lead Temperature for Soldering | 1 |
| Maximum lead temperature for soldering (case) | TSOLD |  |  | 260 | °C | 1.6 mm (0.062in.) from Case for 10s | 1 |
| Isolation voltage | VISOL |  |  | 2500 | V~ | 50/60 Hz, 1 Minute | 1 |
| Reverse recovery time | trr |  | 145 |  | ns |  | 2 |
| Reverse recovery charge | QRM |  | 890 |  | nC |  | 2 |
| Reverse recovery current | IRM |  | 12 |  | A |  | 2 |
| Gate input resistance | RGi |  | 1 |  | Ω |  | 2 |
| Input capacitance | Ciss |  | 2190 |  | pF |  | 2 |
| Output capacitance | Coss |  | 1450 |  | pF | VGS = 0V, VDS = 25V, f = 1MHz | 2 |
| Reverse transfer capacitance | Crss |  | 1.3 |  | pF |  | 2 |
| Effective output capacitance, energy related | Co(er) |  | 92 |  | pF |  | 2 |
| Effective output capacitance, time related | Co(tr) |  | 330 |  | pF |  | 2 |
| Turn-on delay time | td(on) |  | 30 |  | ns |  | 2 |
| Rise time | tr |  | 37 |  | ns |  | 2 |
| Turn-off delay time | td(off) |  | 42 |  | ns |  | 2 |
| Fall time | tf |  | 18 |  | ns |  | 2 |
| Total gate charge | Qg(on) |  | 37 |  | nC |  | 2 |
| Gate-source charge | Qgs |  | 12 |  | nC | VGS = 10V, VDS = 0.5 • VDSS, ID = 11A | 2 |
| Gate-drain charge | Qgd |  | 14 |  | nC | VGS = 10V, VDS = 0.5 • VDSS, ID = 11A | 2 |

## CAD (KiCad official)

- Symbol: `IXFP22N65X2M`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `ixfp22n65x2m-etched.step` / `ixfp22n65x2m-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ixfp22n65x2m.step` / `ixfp22n65x2m.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [IXYS datasheet](docs/ixfp22n65x2m-datasheet.pdf) (6 pp, sha256 `a89b356805c04cd2`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `off` (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ixfp22n65x2m-datasheet.pdf)