component
IXFP22N65X2M
Public Made by Adomby adom
IXYS MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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IXFP22N65X2M
IXYS · MOSFETs · TO-220
IXFP22N65X2M from IXYS, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; continuous VGSS is limited to 30 V and transient VGSM to 40 V per the maximum ratings. |
| 2 | Drain | passive | Drain terminal; VDSS is 650 V and ID25 is 22 A at TC = 25°C, limited by TJM. |
| 3 | Source | passive | Source terminal; repetitive pulse source-drain current ISM is 88 A, limited by TJM. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | IXYS |
| Package | TO-220 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 650 | V | VGS = 0V, ID = 250µA | 1 | ||
| Gate threshold voltage | VGS(th) | 3.5 | 5 | V | VDS = VGS, ID = 1.5mA | 1 | |
| Gate-source leakage current | IGSS | 100 | nA | VGS = 30V, VDS = 0V | 1 | ||
| Zero gate voltage drain current | IDSS | 10 | A | VDS = VDSS, VGS = 0V | 1 | ||
| Zero gate voltage drain current at TJ=125C | IDSS | 1.5 | mA | TJ = 125C | 1 | ||
| Static drain-source on resistance | RDS(on) | 145 | mΩ | VGS = 10V, ID = 11A, Note 1 | 1 | ||
| Forward transconductance | gfs | 8 | 22 | S | VDS = 10V, ID = 11A, Note 1 | 2 | |
| Continuous source current | IS | 22 | A | VGS = 0V | 2 | ||
| Pulsed source current | ISM | 88 | A | Repetitive, Pulse Width Limited by TJM | 2 | ||
| Diode forward voltage | VSD | 1.4 | V | IF = IS, VGS = 0V, Note 1 | 2 | ||
| Thermal resistance junction to case | RthJC | 3.37 | C/W | 2 | |||
| Thermal resistance case to sink | RthCS | 0.5 | C/W | 2 | |||
| Drain-source voltage | VDSS | 650 | V | TJ = 25C to 150C | 1 | ||
| Drain-gate voltage | VDGR | 650 | V | TJ = 25C to 150C, RGS = 1M | 1 | ||
| Continuous gate-source voltage | VGSS | 30 | V | Continuous | 1 | ||
| Transient gate-source voltage | VGSM | 40 | V | Transient | 1 | ||
| Continuous drain current | ID25 | 22 | A | TC = 25C, Limited by TJM | 1 | ||
| Pulsed drain current | IDM | 44 | A | TC = 25C, Pulse Width Limited by TJM | 1 | ||
| Avalanche current | IA | 5 | A | TC = 25C | 1 | ||
| Single pulse avalanche energy | EAS | 1 | J | TC = 25C | 1 | ||
| Peak diode recovery dv/dt | dv/dt | 50 | V/ns | IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C | 1 | ||
| Total power dissipation | PD | 37 | W | TC = 25C | 1 | ||
| Operating junction temperature | TJ | -55 | 150 | C | 1 | ||
| Maximum junction temperature | TJM | 150 | C | 1 | |||
| Storage temperature | Tstg | -55 | 150 | C | 1 | ||
| Maximum lead temperature for soldering | TL | 300 | °C | Maximum Lead Temperature for Soldering | 1 | ||
| Maximum lead temperature for soldering (case) | TSOLD | 260 | °C | 1.6 mm (0.062in.) from Case for 10s | 1 | ||
| Isolation voltage | VISOL | 2500 | V~ | 50/60 Hz, 1 Minute | 1 | ||
| Reverse recovery time | trr | 145 | ns | 2 | |||
| Reverse recovery charge | QRM | 890 | nC | 2 | |||
| Reverse recovery current | IRM | 12 | A | 2 | |||
| Gate input resistance | RGi | 1 | Ω | 2 | |||
| Input capacitance | Ciss | 2190 | pF | 2 | |||
| Output capacitance | Coss | 1450 | pF | VGS = 0V, VDS = 25V, f = 1MHz | 2 | ||
| Reverse transfer capacitance | Crss | 1.3 | pF | 2 | |||
| Effective output capacitance, energy related | Co(er) | 92 | pF | 2 | |||
| Effective output capacitance, time related | Co(tr) | 330 | pF | 2 | |||
| Turn-on delay time | td(on) | 30 | ns | 2 | |||
| Rise time | tr | 37 | ns | 2 | |||
| Turn-off delay time | td(off) | 42 | ns | 2 | |||
| Fall time | tf | 18 | ns | 2 | |||
| Total gate charge | Qg(on) | 37 | nC | 2 | |||
| Gate-source charge | Qgs | 12 | nC | VGS = 10V, VDS = 0.5 • VDSS, ID = 11A | 2 | ||
| Gate-drain charge | Qgd | 14 | nC | VGS = 10V, VDS = 0.5 • VDSS, ID = 11A | 2 |
CAD (KiCad official)
- Symbol:
IXFP22N65X2M - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
ixfp22n65x2m-etched.step/ixfp22n65x2m-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ixfp22n65x2m.step/ixfp22n65x2m.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: IXYS datasheet (6 pp, sha256
a89b356805c04cd2, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).