component
IXFH52N50P2
Public Made by Adomby adom
IXYS MOSFETs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
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{
"schema_version": 1,
"type": "component",
"slug": "ixfh52n50p2",
"title": "IXFH52N50P2",
"brief": "IXYS MOSFETs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
"version": "0.1.0",
"license": "CC-BY-SA-4.0",
"tags": [
"component",
"triode-mos tube-transistor",
"ixfh52n50p2",
"factory-2.0.0",
"extractor-text"
],
"component": {
"mpn": "IXFH52N50P2",
"manufacturer": "IXYS",
"package": "TO-247",
"pin_count": 3,
"category": "Triode/MOS Tube/Transistor",
"subcategory": "MOSFETs",
"datasheet": "https://datasheet.lcsc.com/datasheet/pdf/ff1ccd11afb8ba034f91a315f34dca52.pdf",
"parts": {
"symbol": "ixfh52n50p2.kicad_sym",
"footprint": "ixfh52n50p2.kicad_mod",
"model_3d": "ixfh52n50p2-hero.glb",
"model_3d_plain": "ixfh52n50p2-etched.glb",
"model_3d_step": "ixfh52n50p2-etched.step",
"model_3d_step_plain": "ixfh52n50p2.step",
"lbr": "ixfh52n50p2.lbr"
},
"distributor_links": {
"lcsc": "C3290789",
"digikey": "IXFH52N50P2-ND",
"mouser": "747-IXFH52N50P2"
},
"distributor_check": {
"checked_at": "2026-10-27T00:06:02Z",
"source": "Component Ocean /api/assign-pns",
"digikey": {
"pn": "IXFH52N50P2-ND",
"status": "found"
},
"mouser": {
"pn": "747-IXFH52N50P2",
"status": "found"
}
},
"pins": [
{
"number": "1",
"name": "Gate",
"type": "input",
"description": "Gate terminal; VGSS is limited to ±30 V continuous and VGSM to ±40 V transient."
},
{
"number": "2",
"name": "Drain",
"type": "passive",
"description": "Drain terminal, electrically connected to the mounting tab; rated VDSS 500 V and ID25 52 A at TC = 25°C."
},
{
"number": "3",
"name": "Source",
"type": "passive",
"description": "Source terminal; source-drain diode current IS is 52 A at VGS = 0 V."
}
],
"provenance": {
"extractor": "extract_pins 0.3",
"factory_chain": {
"factory": "2.0.0",
"extractor": "extract_pins 0.3",
"primary_model": "claude-haiku-5-5",
"primary_mode": "text",
"consensus_model": "claude-sonnet-5-5",
"consensus": "agreed",
"guards": "pin_guards 0.1: passed",
"guard_notes": [
"extractor flagged: The TO-247 (IXFH) variant has three numbered leads plus an unnumbered mounting tab, which the datash"
],
"pages_sent": 5,
"cost_usd": 0.0069,
"at": "2026-10-27T00:04:43"
},
"datasheet": {
"url": "https://datasheet.lcsc.com/datasheet/pdf/ff1ccd11afb8ba034f91a315f34dca52.pdf",
"pages": 5,
"sha256": "da4ff54d62884f1e",
"source_tier": "lcsc"
},
"cad": "KiCad official (CC-BY-SA 4.0)",
"pins": {
"total": 3,
"described": 3,
"cites_pages": true,
"refuses_to_fabricate": true
}
},
"viewers": {
"symbol": "viewers/symbol.html",
"footprint": "viewers/footprint.html"
},
"models_3d": [
{
"file": "ixfh52n50p2.step",
"role": "plain",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "body on z = 0, through-hole leads below",
"extents_mm": [
15.9,
5.03,
41.1
],
"zmin_mm": -15.83,
"centre_offset_mm": 0.185,
"footprint_binding": "identity",
"sha256": "ec0db59b04bcea2e0db6f976bf3ab8644e761c8b0059239f77f4febd6dc9eff4",
"checked": "2026-10-27",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
},
{
"file": "ixfh52n50p2-etched.step",
"role": "eda",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "body on z = 0, through-hole leads below",
"extents_mm": [
15.9,
5.03,
41.1
],
"zmin_mm": -15.83,
"centre_offset_mm": 0.185,
"footprint_binding": "identity",
"sha256": "af4c9795e2132ec52552db35897bff5c3ab46070d3d044c826562a25703477c6",
"checked": "2026-10-27",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
}
]
},
"metadata": {
"specs": {
"Manufacturer": "IXYS",
"Package": "TO-247",
"Category": "Triode/MOS Tube/Transistor",
"Pins": "3"
},
"characteristics": {
"version": 1,
"source": "datasheet",
"datasheet_sha256": "da4ff54d62884f1e255230db0c98f72d5952f9587048b34dff12114f35cbc9d3",
"rows": [
{
"name": "Drain-source voltage",
"symbol": "VDSS",
"kind": "absolute_maximum",
"unit": "V",
"min": null,
"typ": null,
"max": 500,
"conditions": "TJ = 25°C to 150°C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Drain-gate voltage",
"symbol": "VDGR",
"kind": "absolute_maximum",
"unit": "V",
"min": null,
"typ": null,
"max": 500,
"conditions": "TJ = 25°C to 150°C, RGS = 1MΩ",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Continuous gate-source voltage",
"symbol": "VGSS",
"kind": "absolute_maximum",
"unit": "V",
"min": -30,
"typ": null,
"max": 30,
"conditions": "Continuous",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Transient gate-source voltage",
"symbol": "VGSM",
"kind": "absolute_maximum",
"unit": "V",
"min": -40,
"typ": null,
"max": 40,
"conditions": "Transient",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Continuous drain current",
"symbol": "ID25",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 52,
"conditions": "TC = 25°C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Pulsed drain current",
"symbol": "IDM",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 150,
"conditions": "TC = 25°C, Pulse Width Limited by TJM",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Avalanche current",
"symbol": "IA",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 52,
"conditions": "TC = 25°C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Single pulse avalanche energy",
"symbol": "EAS",
"kind": "absolute_maximum",
"unit": "J",
"min": null,
"typ": null,
"max": 1.5,
"conditions": "TC = 25°C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Peak diode recovery dv/dt",
"symbol": "dv/dt",
"kind": "absolute_maximum",
"unit": "V/ns",
"min": null,
"typ": null,
"max": 15,
"conditions": "IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Total power dissipation",
"symbol": "PD",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 960,
"conditions": "TC = 25°C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Operating junction temperature",
"symbol": "TJ",
"kind": "absolute_maximum",
"unit": "°C",
"min": -55,
"typ": null,
"max": 150,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Maximum junction temperature",
"symbol": "TJM",
"kind": "absolute_maximum",
"unit": "°C",
"min": null,
"typ": null,
"max": 150,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Storage temperature",
"symbol": "Tstg",
"kind": "absolute_maximum",
"unit": "°C",
"min": -55,
"typ": null,
"max": 150,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Maximum lead temperature for soldering",
"symbol": "TL",
"kind": "absolute_maximum",
"unit": "°C",
"min": null,
"typ": null,
"max": 300,
"conditions": "1.6mm (0.062in.) from Case for 10s",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Plastic body soldering temperature",
"symbol": "Tsold",
"kind": "absolute_maximum",
"unit": "°C",
"min": null,
"typ": null,
"max": 260,
"conditions": "Plastic Body for 10 seconds",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Drain-source breakdown voltage",
"symbol": "BVDSS",
"kind": "electrical",
"unit": "V",
"min": 500,
"typ": null,
"max": null,
"conditions": "VGS = 0V, ID = 1mA",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Gate threshold voltage",
"symbol": "VGS(th)",
"kind": "electrical",
"unit": "V",
"min": 2.5,
"typ": null,
"max": 4.5,
"conditions": "VDS = VGS, ID = 4mA",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Gate-source leakage current",
"symbol": "IGSS",
"kind": "electrical",
"unit": "nA",
"min": -100,
"typ": null,
"max": 100,
"conditions": "VGS = ±30V, VDS = 0V",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Zero gate voltage drain current at 25°C",
"symbol": "IDSS",
"kind": "electrical",
"unit": "μA",
"min": null,
"typ": null,
"max": 15,
"conditions": "VDS = VDSS, VGS = 0V",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Zero gate voltage drain current at 125°C",
"symbol": "IDSS",
"kind": "electrical",
"unit": "mA",
"min": null,
"typ": null,
"max": 1.5,
"conditions": "VDS = VDSS, VGS = 0V, TJ = 125°C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Static drain-source on-resistance",
"symbol": "RDS(on)",
"kind": "electrical",
"unit": "mΩ",
"min": null,
"typ": null,
"max": 120,
"conditions": "VGS = 10V, ID = 0.5 • ID25, Note 1",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Forward transconductance",
"symbol": "gfs",
"kind": "electrical",
"unit": "S",
"min": 30,
"typ": 48,
"max": null,
"conditions": "VDS = 20V, ID = 0.5 • ID25, Note 1",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Source current (body diode)",
"symbol": "IS",
"kind": "electrical",
"unit": "A",
"min": null,
"typ": null,
"max": 52,
"conditions": "VGS = 0V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Pulsed source current (body diode)",
"symbol": "ISM",
"kind": "electrical",
"unit": "A",
"min": null,
"typ": null,
"max": 208,
"conditions": "Repetitive, Pulse Width Limited by TJM",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Diode forward voltage",
"symbol": "VSD",
"kind": "electrical",
"unit": "V",
"min": null,
"typ": null,
"max": 1.3,
"conditions": "IF = IS, VGS = 0V, Note 1",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Junction-to-case thermal resistance",
"symbol": "RthJC",
"kind": "thermal",
"unit": "°C/W",
"min": null,
"typ": null,
"max": 0.13,
"conditions": "",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Case-to-sink thermal resistance",
"symbol": "RthCS",
"kind": "thermal",
"unit": "°C/W",
"min": null,
"typ": null,
"max": 0.21,
"conditions": "",
"source_page": 2,
"source": "datasheet"
}
]
}
},
"variants": [],
"sections": [
"hero",
"viewers",
"readme",
"breadcrumbs",
"info"
],
"discovery_triggers": [
"ixfh52n50p2"
],
"discovery_pitch": "IXFH52N50P2 (IXYS) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
"author": {
"name": "Ray",
"email": "[email protected]"
},
"dependencies": {},
"hero": {
"type": "image",
"path": "docs/hero.png"
},
"files": [
"page.json",
"README.md",
"ixfh52n50p2.kicad_sym",
"ixfh52n50p2.kicad_mod",
"ixfh52n50p2.glb",
"ixfh52n50p2.step",
"ixfh52n50p2.lbr",
"docs/hero.png",
"docs/ixfh52n50p2-datasheet.pdf",
"viewers/symbol.html",
"viewers/footprint.html",
"ixfh52n50p2-hero.glb",
"ixfh52n50p2-hero.overlay.json",
"ixfh52n50p2-etched.glb"
],
"visibility": {
"public": true
}
}