component

IXFH52N50P2

Public Made by Adom

by adom

IXYS MOSFETs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IXFH52N50P2

IXYS · MOSFETs · TO-247

IXFH52N50P2 from IXYS, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal; VGSS is limited to ±30 V continuous and VGSM to ±40 V transient.
2 Drain passive Drain terminal, electrically connected to the mounting tab; rated VDSS 500 V and ID25 52 A at TC = 25°C.
3 Source passive Source terminal; source-drain diode current IS is 52 A at VGS = 0 V.

Key specifications

Parameter Value
Manufacturer IXYS
Package TO-247
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDSS 500 V TJ = 25°C to 150°C 1
Drain-gate voltage VDGR 500 V TJ = 25°C to 150°C, RGS = 1MΩ 1
Continuous gate-source voltage VGSS -30 30 V Continuous 1
Transient gate-source voltage VGSM -40 40 V Transient 1
Continuous drain current ID25 52 A TC = 25°C 1
Pulsed drain current IDM 150 A TC = 25°C, Pulse Width Limited by TJM 1
Avalanche current IA 52 A TC = 25°C 1
Single pulse avalanche energy EAS 1.5 J TC = 25°C 1
Peak diode recovery dv/dt dv/dt 15 V/ns IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 1
Total power dissipation PD 960 W TC = 25°C 1
Operating junction temperature TJ -55 150 °C 1
Maximum junction temperature TJM 150 °C 1
Storage temperature Tstg -55 150 °C 1
Maximum lead temperature for soldering TL 300 °C 1.6mm (0.062in.) from Case for 10s 1
Plastic body soldering temperature Tsold 260 °C Plastic Body for 10 seconds 1
Drain-source breakdown voltage BVDSS 500 V VGS = 0V, ID = 1mA 1
Gate threshold voltage VGS(th) 2.5 4.5 V VDS = VGS, ID = 4mA 1
Gate-source leakage current IGSS -100 100 nA VGS = ±30V, VDS = 0V 1
Zero gate voltage drain current at 25°C IDSS 15 μA VDS = VDSS, VGS = 0V 1
Zero gate voltage drain current at 125°C IDSS 1.5 mA VDS = VDSS, VGS = 0V, TJ = 125°C 1
Static drain-source on-resistance RDS(on) 120 mΩ VGS = 10V, ID = 0.5 • ID25, Note 1 1
Forward transconductance gfs 30 48 S VDS = 20V, ID = 0.5 • ID25, Note 1 2
Source current (body diode) IS 52 A VGS = 0V 2
Pulsed source current (body diode) ISM 208 A Repetitive, Pulse Width Limited by TJM 2
Diode forward voltage VSD 1.3 V IF = IS, VGS = 0V, Note 1 2
Junction-to-case thermal resistance RthJC 0.13 °C/W 2
Case-to-sink thermal resistance RthCS 0.21 °C/W 2

CAD (KiCad official)

  • Symbol: IXFH52N50P2
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247 (KiCad packages3D, STEP)
  • 3D model files: ixfh52n50p2-etched.step / ixfh52n50p2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ixfh52n50p2.step / ixfh52n50p2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: IXYS datasheet (5 pp, sha256 da4ff54d62884f1e, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF