# IXFH160N15T2

**IXYS** · MOSFETs · TO-247

IXFH160N15T2 from IXYS, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; continuous gate-source voltage is limited to ±20 V (VGSS) and transient to ±30 V (VGSM). |
| 2 | Drain | passive | Drain terminal; VDSS is 150 V and continuous drain current ID25 is 160 A at TC = 25°C. |
| 3 | Source | passive | Source terminal, the reference for gate drive; source-drain diode continuous current IS is 160 A at VGS = 0 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | IXYS |
| Package | TO-247 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 150 |  |  | V | VGS = 0V, ID = 250µA | 1 |
| Gate-source threshold voltage | VGS(th) | 2.5 |  | 4.5 | V | VDS = VGS, ID = 1mA | 1 |
| Gate-source leakage current | IGSS | -200 |  | 200 | nA | VGS = ±20V, VDS = 0V | 1 |
| Zero gate voltage drain current | IDSS |  |  | 10 | µA | VDS = VDSS, VGS = 0V | 1 |
| Zero gate voltage drain current at TJ = 150°C | IDSS |  |  | 1 | mA | TJ = 150°C | 1 |
| Static drain-source on-resistance | RDS(on) |  | 7.7 | 9 | mΩ | VGS = 10V, ID = 0.5 • ID25, Note 1 | 1 |
| Forward transconductance | gfs | 80 | 130 |  | S | VDS = 10V, ID = 60A, Note 1 | 2 |
| Source current | IS |  |  | 160 | A | VGS = 0V | 2 |
| Pulsed source current | ISM |  |  | 640 | A | Repetitive, Pulse Width Limited by TJM | 2 |
| Diode forward voltage | VSD |  |  | 1.4 | V | IF = 100A, VGS = 0V, Note 1 | 2 |
| Reverse recovery time | trr |  | 160 |  | ns | IF = 80A, -di/dt = 100A/µs, VR = 75V, VGS = 0V | 2 |
| Peak reverse recovery current | IRM |  | 7 |  | A | IF = 80A, -di/dt = 100A/µs, VR = 75V, VGS = 0V | 2 |
| Reverse recovery charge | QRM |  | 0.32 |  | µC | IF = 80A, -di/dt = 100A/µs, VR = 75V, VGS = 0V | 2 |
| Input capacitance | Ciss |  | 15 |  | nF |  | 2 |
| Output capacitance | Coss |  | 1120 |  | pF | VGS = 0V, VDS = 25V, f = 1MHz | 2 |
| Reverse transfer capacitance | Crss |  | 113 |  | pF |  | 2 |
| Turn-on delay time | td(on) |  | 37 |  | ns | Resistive Switching Times: VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 2Ω (External) | 2 |
| Rise time | tr |  | 15 |  | ns | Resistive Switching Times: VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 2Ω (External) | 2 |
| Turn-off delay time | td(off) |  | 50 |  | ns | Resistive Switching Times: VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 2Ω (External) | 2 |
| Fall time | tf |  | 26 |  | ns | Resistive Switching Times: VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 2Ω (External) | 2 |
| Total gate charge | Qg(on) |  | 253 |  | nC |  | 2 |
| Gate-source charge | Qgs |  | 67 |  | nC | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 | 2 |
| Gate-drain charge | Qgd |  | 73 |  | nC | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 | 2 |
| Junction-to-case thermal resistance | RthJC |  |  | 0.17 | °C/W |  | 2 |
| Case-to-sink thermal resistance | RthCS |  |  | 0.21 | °C/W |  | 2 |
| Drain-source voltage | VDSS |  |  | 150 | V | TJ = 25°C to 175°C | 1 |
| Drain-gate voltage | VDGR |  |  | 150 | V | TJ = 25°C to 175°C, RGS = 1MΩ | 1 |
| Continuous gate-source voltage | VGSS | -20 |  | 20 | V | Continuous | 1 |
| Transient gate-source voltage | VGSM | -30 |  | 30 | V | Transient | 1 |
| Continuous drain current | ID25 |  |  | 160 | A | TC = 25°C | 1 |
| Pulsed drain current | IDM |  |  | 440 | A | TC = 25°C, Pulse Width Limited by TJM | 1 |
| Avalanche current | IA |  |  | 80 | A | TC = 25°C | 1 |
| Single pulse avalanche energy | EAS |  |  | 1.5 | J | TC = 25°C | 1 |
| Maximum diode dv/dt | dv/dt |  |  | 15 | V/ns | IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C | 1 |
| Total power dissipation | PD |  |  | 880 | W | TC = 25°C | 1 |
| Operating junction temperature | TJ | -55 |  | 175 | °C |  | 1 |
| Maximum junction temperature | TJM |  |  | 175 | °C |  | 1 |
| Storage temperature | Tstg | -55 |  | 175 | °C |  | 1 |
| Maximum lead temperature for soldering | TL |  |  | 300 | °C |  | 1 |
| Plastic body soldering temperature | TSOLD |  |  | 260 | °C | Plastic Body for 10s | 1 |

## CAD (KiCad official)

- Symbol: `IXFH160N15T2`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247 (KiCad packages3D, STEP)
- 3D model files: `ixfh160n15t2-etched.step` / `ixfh160n15t2-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ixfh160n15t2.step` / `ixfh160n15t2.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [IXYS datasheet](docs/ixfh160n15t2-datasheet.pdf) (7 pp, sha256 `4a1ce6deb78bba6c`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ixfh160n15t2-datasheet.pdf)