component
IXFH160N15T2
Public Made by Adomby adom
IXYS MOSFETs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIXFH160N15T2
IXYS · MOSFETs · TO-247
IXFH160N15T2 from IXYS, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; continuous gate-source voltage is limited to ±20 V (VGSS) and transient to ±30 V (VGSM). |
| 2 | Drain | passive | Drain terminal; VDSS is 150 V and continuous drain current ID25 is 160 A at TC = 25°C. |
| 3 | Source | passive | Source terminal, the reference for gate drive; source-drain diode continuous current IS is 160 A at VGS = 0 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | IXYS |
| Package | TO-247 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 150 | V | VGS = 0V, ID = 250µA | 1 | ||
| Gate-source threshold voltage | VGS(th) | 2.5 | 4.5 | V | VDS = VGS, ID = 1mA | 1 | |
| Gate-source leakage current | IGSS | -200 | 200 | nA | VGS = ±20V, VDS = 0V | 1 | |
| Zero gate voltage drain current | IDSS | 10 | µA | VDS = VDSS, VGS = 0V | 1 | ||
| Zero gate voltage drain current at TJ = 150°C | IDSS | 1 | mA | TJ = 150°C | 1 | ||
| Static drain-source on-resistance | RDS(on) | 7.7 | 9 | mΩ | VGS = 10V, ID = 0.5 • ID25, Note 1 | 1 | |
| Forward transconductance | gfs | 80 | 130 | S | VDS = 10V, ID = 60A, Note 1 | 2 | |
| Source current | IS | 160 | A | VGS = 0V | 2 | ||
| Pulsed source current | ISM | 640 | A | Repetitive, Pulse Width Limited by TJM | 2 | ||
| Diode forward voltage | VSD | 1.4 | V | IF = 100A, VGS = 0V, Note 1 | 2 | ||
| Reverse recovery time | trr | 160 | ns | IF = 80A, -di/dt = 100A/µs, VR = 75V, VGS = 0V | 2 | ||
| Peak reverse recovery current | IRM | 7 | A | IF = 80A, -di/dt = 100A/µs, VR = 75V, VGS = 0V | 2 | ||
| Reverse recovery charge | QRM | 0.32 | µC | IF = 80A, -di/dt = 100A/µs, VR = 75V, VGS = 0V | 2 | ||
| Input capacitance | Ciss | 15 | nF | 2 | |||
| Output capacitance | Coss | 1120 | pF | VGS = 0V, VDS = 25V, f = 1MHz | 2 | ||
| Reverse transfer capacitance | Crss | 113 | pF | 2 | |||
| Turn-on delay time | td(on) | 37 | ns | Resistive Switching Times: VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 2Ω (External) | 2 | ||
| Rise time | tr | 15 | ns | Resistive Switching Times: VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 2Ω (External) | 2 | ||
| Turn-off delay time | td(off) | 50 | ns | Resistive Switching Times: VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 2Ω (External) | 2 | ||
| Fall time | tf | 26 | ns | Resistive Switching Times: VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 2Ω (External) | 2 | ||
| Total gate charge | Qg(on) | 253 | nC | 2 | |||
| Gate-source charge | Qgs | 67 | nC | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 | 2 | ||
| Gate-drain charge | Qgd | 73 | nC | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 | 2 | ||
| Junction-to-case thermal resistance | RthJC | 0.17 | °C/W | 2 | |||
| Case-to-sink thermal resistance | RthCS | 0.21 | °C/W | 2 | |||
| Drain-source voltage | VDSS | 150 | V | TJ = 25°C to 175°C | 1 | ||
| Drain-gate voltage | VDGR | 150 | V | TJ = 25°C to 175°C, RGS = 1MΩ | 1 | ||
| Continuous gate-source voltage | VGSS | -20 | 20 | V | Continuous | 1 | |
| Transient gate-source voltage | VGSM | -30 | 30 | V | Transient | 1 | |
| Continuous drain current | ID25 | 160 | A | TC = 25°C | 1 | ||
| Pulsed drain current | IDM | 440 | A | TC = 25°C, Pulse Width Limited by TJM | 1 | ||
| Avalanche current | IA | 80 | A | TC = 25°C | 1 | ||
| Single pulse avalanche energy | EAS | 1.5 | J | TC = 25°C | 1 | ||
| Maximum diode dv/dt | dv/dt | 15 | V/ns | IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C | 1 | ||
| Total power dissipation | PD | 880 | W | TC = 25°C | 1 | ||
| Operating junction temperature | TJ | -55 | 175 | °C | 1 | ||
| Maximum junction temperature | TJM | 175 | °C | 1 | |||
| Storage temperature | Tstg | -55 | 175 | °C | 1 | ||
| Maximum lead temperature for soldering | TL | 300 | °C | 1 | |||
| Plastic body soldering temperature | TSOLD | 260 | °C | Plastic Body for 10s | 1 |
CAD (KiCad official)
- Symbol:
IXFH160N15T2 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247 (KiCad packages3D, STEP)
- 3D model files:
ixfh160n15t2-etched.step/ixfh160n15t2-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ixfh160n15t2.step/ixfh160n15t2.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: IXYS datasheet (7 pp, sha256
4a1ce6deb78bba6c, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).