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ISP752TFUMA1

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Infineon Technologies Power Distribution Switches, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ISP752TFUMA1

Infineon Technologies · Power Distribution Switches · SOIC-8

ISP752TFUMA1 from Infineon Technologies, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GND power_in Logic ground; the datasheet specifies a 150 Ω resistor in the GND connection for reverse battery protection and for supply voltages above Vbb(AZ).
2 IN input Input that activates the power switch on a logic high signal; continuous input voltage is limited to -10 to +16 V and DC input current to ±5 mA.
3 OUT power_out Output to the load, with ESD rating of ±6 kV (HBM) and an inductive/overvoltage output clamp of VON(CL) = 59 to 63 V relative to Vbb.
4 NC unconnected Not connected.
5 Vbb power_in Positive power supply voltage; operating voltage is 6 to 52 V and the absolute maximum supply voltage is 52 V.
6 Vbb power_in Positive power supply voltage; operating voltage is 6 to 52 V and the absolute maximum supply voltage is 52 V.
7 Vbb power_in Positive power supply voltage; operating voltage is 6 to 52 V and the absolute maximum supply voltage is 52 V.
8 Vbb power_in Positive power supply voltage; operating voltage is 6 to 52 V and the absolute maximum supply voltage is 52 V.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOIC-8
Category Power Management (PMIC)
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage Vbb 52 V 5
Supply voltage for full short circuit protection Vbb(SC) 50 V 5
Continuous input voltage VIN -10 16 V 5
Current through input pin (DC) IIN -5 5 mA 5
Junction temperature Tj 150 °C 5
Operating temperature Ta -30 85 °C 5
Storage temperature Tstg -40 105 °C 5
Power dissipation Ptot 1.5 W Device on 50 mm × 50 mm × 1.5 mm epoxy PCB FR4 with 6 cm2 copper area 5
Inductive load switch-off energy dissipation EAS 125 mJ Tj = 150°C, IL = 1 A, single pulse 5
Load dump protection VLoaddump 73.5 V VLoadDump = VA + VS, RI = 2 Ω, td = 400 ms, VIN = low or high, VA = 13.5 V, RL = 13.5 Ω 5
Load dump protection VLoaddump 83.5 V VLoadDump = VA + VS, RI = 2 Ω, td = 400 ms, VIN = low or high, VA = 13.5 V, RL = 27 Ω 5
Electrostatic discharge voltage (HBM), OUT VESD -6 6 kV OUT, according to ANSI/ESDA/JEDEC JS001 (1.5 kΩ, 100 pF) 5
Electrostatic discharge voltage (HBM), IN VESD -1 1 kV IN, according to ANSI/ESDA/JEDEC JS001 (1.5 kΩ, 100 pF) 5
Electrostatic discharge voltage (HBM), all other pins VESD -4 4 kV All other pins, according to ANSI/ESDA/JEDEC JS001 (1.5 kΩ, 100 pF) 5
Thermal resistance, junction to ambient Rth(JA) 70 83 K/W 6 cm2 cooling area 6
On-state resistance RON 150 200 mΩ Tj = 25°C, IL = 1 A, Vbb = 9 V to 52 V 10
On-state resistance RON 270 380 mΩ Tj = 150°C 10
Nominal load current IL(nom) 1.3 1.7 A Device on PCB 5), TC = 85°C, Tj ≤ 150°C 10
Turn-on time to 90% VOUT ton 80 180 µs RL = 47 Ω 10
Turn-off time to 10% VOUT toff 80 200 µs RL = 47 Ω 10
Slew rate on 10% to 30% VOUT dV/dton 0.7 2 V/µs RL = 47 Ω, Vbb = 13.5 V 10
Slew rate off 70% to 40% VOUT -dV/dtoff 0.9 2 V/µs RL = 47 Ω, Vbb = 13.5 V 10
Operating voltage Vbb(on) 6 52 V 10
Undervoltage shutdown of charge pump Vbb(under) 4 V Tj = -40°C to +85°C 10
Undervoltage shutdown of charge pump Vbb(under) 5.5 V Tj = 150°C 10
Undervoltage restart of charge pump Vbb(ucp) 4 5.5 V 10
Standby current Ibb(off) 15 µA Tj = -40°C to +85°C, VIN = low 10
Standby current Ibb(off) 18 µA Tj = +150°C, VIN = low 10
Leakage output current IL(off) 5 µA VIN = low; included in Ibb(off) 10
Initial peak short circuit current limit (pin 5 to 3), Tj = -40°C IL(SCp) 9 A Tj = -40°C, Vbb = 20 V, tm = 150 µs 11
Initial peak short circuit current limit (pin 5 to 3), Tj = 150°C IL(SCp) 4 A Tj = 150°C 11
Output clamp (inductive load switch off) VON(CL) 59 63 V VOUT = Vbb - VON(CL), Ibb = 4 mA 11
Overvoltage protection Vbb(AZ) 62 V Ibb = 4 mA 11
Thermal overload trip temperature Tjt 150 °C 11
Reverse battery -Vbb 52 V 11
Input turn-on threshold voltage VIN(T+) 2.2 V 11
Input turn-off threshold voltage VIN(T-) 0.8 V 11
Off state input current IIN(off) 1 25 µA VIN = 0.7 V 11
On state input current IIN(on) 3 25 µA VIN = 5 V 11
Input resistance RI 2 3.5 5 kΩ see page 7 11
Repetitive short circuit current limit, Vbb < 40 V IL(SCr) 6 A Tj = Tjt, Vbb < 40 V 11
Repetitive short circuit current limit, Vbb > 40 V IL(SCr) 4.5 A Tj = Tjt, Vbb > 40 V 11
Initial peak short circuit current limit (pin 5 to 3), Tj = 25°C IL(SCp) 6.5 A Tj = 25°C 11
Initial peak short circuit current limit (pin 5 to 3), Vbb > 40 V IL(SCp) 5 A Tj = -40°C to +150°C, Vbb > 40 V 11
Operating current IGND 0.8 2 mA VIN = high 10
Thermal hysteresis ΔTjt 10 K 11
Drain-source diode voltage (VOUT > Vbb) -VON 600 mV Tj = 150°C 11
Input threshold hysteresis ΔVIN(T) 0.4 V 11
Thermal resistance, junction to ambient (minimum footprint) Rth(JA) 95 K/W Minimum footprint 6

CAD (KiCad official)

  • Symbol: ISP752TFUMA1
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: isp752tfuma1-etched.step / isp752tfuma1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); isp752tfuma1.step / isp752tfuma1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (21 pp, sha256 23785ada06e0a432, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF