component
ISP752TFUMA1
Public Made by Adomby adom
Infineon Technologies Power Distribution Switches, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownISP752TFUMA1
Infineon Technologies · Power Distribution Switches · SOIC-8
ISP752TFUMA1 from Infineon Technologies, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GND | power_in | Logic ground; the datasheet specifies a 150 Ω resistor in the GND connection for reverse battery protection and for supply voltages above Vbb(AZ). |
| 2 | IN | input | Input that activates the power switch on a logic high signal; continuous input voltage is limited to -10 to +16 V and DC input current to ±5 mA. |
| 3 | OUT | power_out | Output to the load, with ESD rating of ±6 kV (HBM) and an inductive/overvoltage output clamp of VON(CL) = 59 to 63 V relative to Vbb. |
| 4 | NC | unconnected | Not connected. |
| 5 | Vbb | power_in | Positive power supply voltage; operating voltage is 6 to 52 V and the absolute maximum supply voltage is 52 V. |
| 6 | Vbb | power_in | Positive power supply voltage; operating voltage is 6 to 52 V and the absolute maximum supply voltage is 52 V. |
| 7 | Vbb | power_in | Positive power supply voltage; operating voltage is 6 to 52 V and the absolute maximum supply voltage is 52 V. |
| 8 | Vbb | power_in | Positive power supply voltage; operating voltage is 6 to 52 V and the absolute maximum supply voltage is 52 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOIC-8 |
| Category | Power Management (PMIC) |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply voltage | Vbb | 52 | V | 5 | |||
| Supply voltage for full short circuit protection | Vbb(SC) | 50 | V | 5 | |||
| Continuous input voltage | VIN | -10 | 16 | V | 5 | ||
| Current through input pin (DC) | IIN | -5 | 5 | mA | 5 | ||
| Junction temperature | Tj | 150 | °C | 5 | |||
| Operating temperature | Ta | -30 | 85 | °C | 5 | ||
| Storage temperature | Tstg | -40 | 105 | °C | 5 | ||
| Power dissipation | Ptot | 1.5 | W | Device on 50 mm × 50 mm × 1.5 mm epoxy PCB FR4 with 6 cm2 copper area | 5 | ||
| Inductive load switch-off energy dissipation | EAS | 125 | mJ | Tj = 150°C, IL = 1 A, single pulse | 5 | ||
| Load dump protection | VLoaddump | 73.5 | V | VLoadDump = VA + VS, RI = 2 Ω, td = 400 ms, VIN = low or high, VA = 13.5 V, RL = 13.5 Ω | 5 | ||
| Load dump protection | VLoaddump | 83.5 | V | VLoadDump = VA + VS, RI = 2 Ω, td = 400 ms, VIN = low or high, VA = 13.5 V, RL = 27 Ω | 5 | ||
| Electrostatic discharge voltage (HBM), OUT | VESD | -6 | 6 | kV | OUT, according to ANSI/ESDA/JEDEC JS001 (1.5 kΩ, 100 pF) | 5 | |
| Electrostatic discharge voltage (HBM), IN | VESD | -1 | 1 | kV | IN, according to ANSI/ESDA/JEDEC JS001 (1.5 kΩ, 100 pF) | 5 | |
| Electrostatic discharge voltage (HBM), all other pins | VESD | -4 | 4 | kV | All other pins, according to ANSI/ESDA/JEDEC JS001 (1.5 kΩ, 100 pF) | 5 | |
| Thermal resistance, junction to ambient | Rth(JA) | 70 | 83 | K/W | 6 cm2 cooling area | 6 | |
| On-state resistance | RON | 150 | 200 | mΩ | Tj = 25°C, IL = 1 A, Vbb = 9 V to 52 V | 10 | |
| On-state resistance | RON | 270 | 380 | mΩ | Tj = 150°C | 10 | |
| Nominal load current | IL(nom) | 1.3 | 1.7 | A | Device on PCB 5), TC = 85°C, Tj ≤ 150°C | 10 | |
| Turn-on time to 90% VOUT | ton | 80 | 180 | µs | RL = 47 Ω | 10 | |
| Turn-off time to 10% VOUT | toff | 80 | 200 | µs | RL = 47 Ω | 10 | |
| Slew rate on 10% to 30% VOUT | dV/dton | 0.7 | 2 | V/µs | RL = 47 Ω, Vbb = 13.5 V | 10 | |
| Slew rate off 70% to 40% VOUT | -dV/dtoff | 0.9 | 2 | V/µs | RL = 47 Ω, Vbb = 13.5 V | 10 | |
| Operating voltage | Vbb(on) | 6 | 52 | V | 10 | ||
| Undervoltage shutdown of charge pump | Vbb(under) | 4 | V | Tj = -40°C to +85°C | 10 | ||
| Undervoltage shutdown of charge pump | Vbb(under) | 5.5 | V | Tj = 150°C | 10 | ||
| Undervoltage restart of charge pump | Vbb(ucp) | 4 | 5.5 | V | 10 | ||
| Standby current | Ibb(off) | 15 | µA | Tj = -40°C to +85°C, VIN = low | 10 | ||
| Standby current | Ibb(off) | 18 | µA | Tj = +150°C, VIN = low | 10 | ||
| Leakage output current | IL(off) | 5 | µA | VIN = low; included in Ibb(off) | 10 | ||
| Initial peak short circuit current limit (pin 5 to 3), Tj = -40°C | IL(SCp) | 9 | A | Tj = -40°C, Vbb = 20 V, tm = 150 µs | 11 | ||
| Initial peak short circuit current limit (pin 5 to 3), Tj = 150°C | IL(SCp) | 4 | A | Tj = 150°C | 11 | ||
| Output clamp (inductive load switch off) | VON(CL) | 59 | 63 | V | VOUT = Vbb - VON(CL), Ibb = 4 mA | 11 | |
| Overvoltage protection | Vbb(AZ) | 62 | V | Ibb = 4 mA | 11 | ||
| Thermal overload trip temperature | Tjt | 150 | °C | 11 | |||
| Reverse battery | -Vbb | 52 | V | 11 | |||
| Input turn-on threshold voltage | VIN(T+) | 2.2 | V | 11 | |||
| Input turn-off threshold voltage | VIN(T-) | 0.8 | V | 11 | |||
| Off state input current | IIN(off) | 1 | 25 | µA | VIN = 0.7 V | 11 | |
| On state input current | IIN(on) | 3 | 25 | µA | VIN = 5 V | 11 | |
| Input resistance | RI | 2 | 3.5 | 5 | kΩ | see page 7 | 11 |
| Repetitive short circuit current limit, Vbb < 40 V | IL(SCr) | 6 | A | Tj = Tjt, Vbb < 40 V | 11 | ||
| Repetitive short circuit current limit, Vbb > 40 V | IL(SCr) | 4.5 | A | Tj = Tjt, Vbb > 40 V | 11 | ||
| Initial peak short circuit current limit (pin 5 to 3), Tj = 25°C | IL(SCp) | 6.5 | A | Tj = 25°C | 11 | ||
| Initial peak short circuit current limit (pin 5 to 3), Vbb > 40 V | IL(SCp) | 5 | A | Tj = -40°C to +150°C, Vbb > 40 V | 11 | ||
| Operating current | IGND | 0.8 | 2 | mA | VIN = high | 10 | |
| Thermal hysteresis | ΔTjt | 10 | K | 11 | |||
| Drain-source diode voltage (VOUT > Vbb) | -VON | 600 | mV | Tj = 150°C | 11 | ||
| Input threshold hysteresis | ΔVIN(T) | 0.4 | V | 11 | |||
| Thermal resistance, junction to ambient (minimum footprint) | Rth(JA) | 95 | K/W | Minimum footprint | 6 |
CAD (KiCad official)
- Symbol:
ISP752TFUMA1 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
isp752tfuma1-etched.step/isp752tfuma1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);isp752tfuma1.step/isp752tfuma1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (21 pp, sha256
23785ada06e0a432, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).