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ISP452HUMA1

Infineon Technologies · Power Distribution Switches · SOT-223-4

ISP452HUMA1 from Infineon Technologies, in a SOT-223-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 OUT output Protected high-side power output; leakage current is 2 µA typ and 5 µA max at Vin low and Tj = -40...+25 °C (7 µA at Tj = 150 °C), and the current limit is 0.7 to 2.4 A.
2 GND power_in Logic ground; operating current IGND is 1 mA typ and 1.6 mA max at Vin = 5 V.
3 IN input Input that activates the power switch on a logical high signal; allowable input voltage range is -3.0 V to Vbb, with input current limited to ±5 mA.
4 Vbb power_in Positive power supply voltage; operating voltage range is 5.0 V to 34 V, with a 40 V maximum supply voltage rating.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-223-4
Category Power Management (PMIC)
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage Vbb 40 V 3
Maximum input voltage VIN -5 V Upper limit printed as Vbb 3
Maximum input current IIN -5 5 mA At VIN > Vbb 3
Inductive load switch-off energy dissipation, single pulse EAS 0.5 J IL = 0.5 A, Tj,start = 150°C (not tested, specified by design) 3
Load dump protection VLoad dump 60 V RI=2 Ω, td=400ms, IN= low or high, UA= 13.5 V, RL= 24 Ω (not tested, specified by design) 3
Load dump protection VLoad dump 80 V RI=2 Ω, td=400ms, IN= low or high, UA= 13.5 V, RL= 80 Ω (not tested, specified by design) 3
Electrostatic discharge capability (PIN 3) VESD -1 1 kV PIN 3 (HBM) 3
Electrostatic discharge capability (PIN 1,2,4) VESD -2 2 kV PIN 1,2,4 (HBM) 3
Junction temperature Tj 150 °C 3
Operating temperature range Ta -30 85 °C 3
Storage temperature range Tstg -40 105 °C 3
Max. power dissipation (DC) Ptot 1.8 W TA = 25 °C 3
Thermal resistance chip - soldering point RthJS 7 K/W chip - soldering point 3
Thermal resistance chip - ambient RthJA 70 K/W Device on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for Vbb connection 3
On-state resistance (pin 4 to 1) RON 0.16 0.2 Ω IL = 0.5 A, Vin = high, Tj = 25°C 4
On-state resistance (pin 4 to 1) RON 0.4 Ω IL = 0.5 A, Vin = high, Tj = 150°C 4
Nominal load current (pin 4 to 1) IL(ISO) 0.7 A ISO Standard: VON = Vbb - VOUT = 0.5 V, TS = 85 °C 4
Turn-on time to 90% VOUT ton 60 100 µs RL = 24 Ω 4
Turn-off time to 10% VOUT toff 60 150 µs RL = 24 Ω 4
Slew rate on dV/dton 2 4 V/µs 10 to 30% VOUT, RL = 24 Ω 4
Slew rate off -dV/dtoff 2 4 V/µs 70 to 40% VOUT, RL = 24 Ω 4
Allowable input voltage range (pin 3 to 2) VIN -3 V Pin 3 to 2; upper limit printed as Vbb 4
Input turn-on threshold voltage VIN(T+) 3.5 V Tj = -40...+150°C 4
Input turn-off threshold voltage VIN(T-) 1.5 V Tj = -40...+150°C 4
Input threshold hysteresis ∆VIN(T) 0.5 V 4
Off state input current (pin 3) IIN(off) 10 60 µA VIN(off) = 1.2 V, Tj = -40...+150°C 4
On state input current (pin 3) IIN(on) 10 100 µA VIN(on) = 3.0 V to Vbb, Tj = -40...+150°C 4
Input resistance RIN 1.5 2.8 3.5 kΩ 4
Operating voltage Vbb(on) 5 34 V Tj = -40...+150°C 5
Undervoltage shutdown Vbb(under) 3.5 5 V Tj = -40...+150°C 5
Undervoltage restart Vbb(u rst) 6.5 V Tj = -40...+25°C 5
Undervoltage restart Vbb(u rst) 7 V Tj = +150°C 5
Undervoltage restart of charge pump Vbb(ucp) 5.6 7 V see diagram page 9 5
Undervoltage hysteresis ∆Vbb(under) 0.3 V ∆Vbb(under) = Vbb(u rst) - Vbb(under) 5
Overvoltage shutdown Vbb(over) 34 42 V Tj = -40...+150°C 5
Overvoltage restart Vbb(o rst) 33 V Tj = -40...+150°C 5
Overvoltage hysteresis ∆Vbb(over) 0.7 V Tj = -40...+150°C 5
Standby current (pin 4) Ibb(off) 10 25 µA Vin = low, Tj = -40...+150°C 5
Operating current (pin 2) IGND 1 1.6 mA Vin = 5 V 5
Leakage current (pin 1) IL(off) 2 5 µA Vin = low, Tj = -40...+25°C 5
Leakage current (pin 1) IL(off) 7 µA Vin = low, Tj = 150°C 5
Current limit (pin 4 to 1) IL(SC) 0.7 1.5 2 A Tj = 25°C, Vbb = 20V 6
Current limit (pin 4 to 1) IL(SC) 0.7 2.4 A Tj = -40...+150°C, Vbb = 20V 6
Overvoltage protection Vbb(AZ) 41 V Ibb = 4mA, Tj = -40...+150°C 6
Output clamp (ind. load switch off) VON(CL) 41 47 V VOUT=Vbb-VON(CL), Ibb = 4mA 6
Thermal overload trip temperature Tjt 150 °C 6
Thermal hysteresis ∆Tjt 10 K 6
Inductive load switch-off energy dissipation EAS 0.5 J Tj, start = 150 °C, single pulse, IL = 0.5 A, Vbb = 12 V (not tested, specified by design) 6
Reverse battery (pin 4 to 2) -Vbb 30 V Requires 150 Ω resistor in GND connection (not tested, specified by design) 6

CAD (KiCad official)

  • Symbol: ISP452HUMA1
  • Footprint: Package_TO_SOT_SMD:SOT-223
  • 3D model: SOT-223-4 (KiCad packages3D, STEP)
  • 3D model files: isp452huma1-etched.step / isp452huma1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); isp452huma1.step / isp452huma1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (10 pp, sha256 7340e8b1352f272f, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF