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ISL6123IRZA
Public Made by Adomby adom
RENESAS Monitors & Reset Circuits, QFN-24-EP(4x4). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ISL6123IRZA
RENESAS · Monitors & Reset Circuits · QFN-24-EP(4x4)
ISL6123IRZA from RENESAS, in a QFN-24-EP(4x4). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | ENABLE | input | Input to start on/off sequencing of supplies (active-high on ISL6123); enable function is disabled for 10ms after UVLO is satisfied. |
| 2 | GATE_A | output | FET gate drive output for channel A, driving the external FET with a 1µA current source to soft-start the ramp into the load. |
| 3 | DLY_OFF_C | passive | Gate off delay timer for channel C; a capacitor to ground is charged by a 1µA source to set the turn-off delay and sequence. |
| 4 | DLY_OFF_D | passive | Gate off delay timer for channel D; a capacitor to ground is charged by a 1µA source to set the turn-off delay and sequence. |
| 5 | GATE_B | output | FET gate drive output for channel B, driving the external FET with a 1µA current source to soft-start the ramp into the load. |
| 6 | GATE_C | output | FET gate drive output for channel C, driving the external FET with a 1µA current source to soft-start the ramp into the load. |
| 7 | GATE_D | output | FET gate drive output for channel D, driving the external FET with a 1µA current source to soft-start the ramp into the load. |
| 8 | DLY_ON_B | passive | Gate on delay timer for channel B; a capacitor to ground is charged with 1µA, 10ms after turn-on is initiated, to set the turn-on delay and sequence. |
| 9 | NC | unconnected | No connect. |
| 10 | GND | power_in | Bias return; IC ground. |
| 11 | NC | unconnected | No connect (ENABLE_2 is used only on the ISL6128). |
| 12 | UVLO_B | input | Undervoltage lockout/monitoring input for channel B with a programmable threshold referenced to an internal 0.633V reference, filtered to ignore transients below 30µs. |
| 13 | DLY_OFF_B | passive | Gate off delay timer for channel B; a capacitor to ground is charged by a 1µA source to set the turn-off delay and sequence. |
| 14 | UVLO_D | input | Undervoltage lockout/monitoring input for channel D with a programmable threshold referenced to an internal 0.633V reference, filtered to ignore transients below 30µs. |
| 15 | DLY_ON_D | passive | Gate on delay timer for channel D; a capacitor to ground is charged with 1µA, 10ms after turn-on is initiated, to set the turn-on delay and sequence. |
| 16 | DLY_ON_C | passive | Gate on delay timer for channel C; a capacitor to ground is charged with 1µA, 10ms after turn-on is initiated, to set the turn-on delay and sequence. |
| 17 | UVLO_C | input | Undervoltage lockout/monitoring input for channel C with a programmable threshold referenced to an internal 0.633V reference, filtered to ignore transients below 30µs. |
| 18 | DLY_OFF_A | passive | Gate off delay timer for channel A; a capacitor to ground is charged by a 1µA source to set the turn-off delay and sequence. |
| 19 | NC | unconnected | No connect. |
| 20 | UVLO_A | input | Undervoltage lockout/monitoring input for channel A with a programmable threshold referenced to an internal 0.633V reference, filtered to ignore transients below 30µs. |
| 21 | DLY_ON_A | passive | Gate on delay timer for channel A; a capacitor to ground is charged with 1µA, 10ms after turn-on is initiated, to set the turn-on delay and sequence. |
| 22 | SYSRST | bidirectional | System reset I/O: as an input, low causes immediate unconditional latch-off of all GATE outputs; as an output, it pulls low on a UV condition, and can be tied to other ICs' SYSRST pins. |
| 23 | VDD | power_in | Chip bias; bias IC from nominal 1.5V to 5V. |
| 24 | RESET | output | Open-drain N-channel RESET output that goes high 150ms after all GATEs are fully enhanced and asserts low when UVLO is not satisfied or ENABLE is deasserted; valid for VDD down to 1V. |
| 25 | EPAD | power_in | Ground exposed pad (die substrate); can be left floating. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | RENESAS |
| Package | QFN-24-EP(4x4) |
| Category | Power Management ICs |
| Pins | 25 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Falling Undervoltage Lockout Threshold | VUVLOvth | 619 | 633 | 647 | mV | TJ = +25°C | 6 |
| Delay Charging Current | DLY_ichg | 0.92 | 1 | 1.08 | µA | VDLY = 0V | 6 |
| Delay Threshold Voltage | DLY_Vth | 1.238 | 1.266 | 1.294 | V | 6 | |
| GATE Turn-On Current | IGATEon | 0.8 | 1.1 | 1.4 | µA | GATE = 0V | 7 |
| GATE Turn-Off Current | IGATEoff_l | -1.4 | -1.05 | -0.8 | µA | GATE = VDD, Disabled | 7 |
| GATE High Voltage (VDD < 2V) | VGATEh | 4.9 | V | VDD < 2V, TJ = +25°C; printed as VDD + 4.9V | 7 | ||
| GATE High Voltage (VDD > 2V) | VGATEh | 5 | 5.3 | V | VDD > 2V; printed as VDD + 5V to VDD + 5.3V | 7 | |
| GATE Low Voltage | VGATEl | 0 | 0.1 | V | Gate Low Voltage, VDD = 1V | 7 | |
| IC Supply Current | IVDD_5V | 0.2 | 0.5 | mA | VDD = 5V | 7 | |
| Undervoltage Lockout Threshold Range | RUVLOvth | 7 | mV | Max VUVLOvth - Min VUVLOvth | 6 | ||
| Delay Charging Current Range | DLY_ichg_r | 0.08 | µA | DLY_ichg(max) - DLY_ichg(min) | 6 | ||
| GATE Current Range | IGATE_range | 0.35 | µA | Within IC IGATE max-min | 7 | ||
| RESET Output Low | VRSTl | 0.1 | V | Measured at VDD = 5V with 5k pull-up resistors | 7 | ||
| SYSRST Low Output Voltage | Vol_srst | 150 | mV | VDD = 1.5V, IOUT = 100µA | 7 | ||
| VDD Supply Voltage Range | VDD | 1.5 | 5.5 | V | 6 | ||
| Temperature Range | TA | -40 | 85 | °C | 6 | ||
| VDD Absolute Maximum | VDD | 6 | V | Relative to GND | 6 | ||
| GATE Absolute Maximum | GATE | -0.3 | 6 | V | Printed -0.3V to VDD+6V; max is offset above VDD | 6 | |
| UVLO, ENABLE, SYSRST, RESET, DLY_ON, DLY_OFF Absolute Maximum | -0.3 | 0.3 | V | Printed -0.3V to VDD + 0.3V; max is offset above VDD | 6 | ||
| Maximum Junction Temperature | TJ | 125 | °C | 6 | |||
| Storage Temperature Range | Tstg | -65 | 150 | °C | 6 | ||
| Thermal Resistance Junction-Ambient | θJA | 46 | °C/W | 24 Ld 4x4 QFN, free air, Note 4 | 6 | ||
| Thermal Resistance Junction-Case | θJC | 8 | °C/W | 24 Ld 4x4 QFN, Note 5 | 6 | ||
| UVLO Threshold Tempco | TCUVLOvth | 40 | µV/°C | 6 | |||
| UVLO Hysteresis | VUVLOhys | 10 | mV | 6 | |||
| UVLO Delay | TUVLOdel | 10 | ms | ENABLE satisfied | 6 | ||
| Transient Filter Duration | tFIL | 30 | µs | VDD, UVLO, ENABLE glitch filter | 6 | ||
| Delay Charging Current Temperature Coefficient | TC_DLY_ichg | 0.2 | nA/°C | 6 | |||
| Delay Threshold Voltage Temperature Coefficient | TC_DLY_Vth | 0.2 | mV/°C | 6 | |||
| ENABLE Threshold | VENh | 1.2 | V | 6 | |||
| ENABLE Threshold (relative to VDD) | VENh | 0.5 | xVDD | Printed 0.5 VDD | 6 | ||
| ENABLE Hysteresis | VENh - VENl | 0.2 | V | Measured at VDD = 1.5V | 6 | ||
| ENABLE Lockout Delay | tdelEN_LO | 10 | ms | UVLO satisfied | 6 | ||
| ENABLE Input Capacitance | Cin_en | 5 | pF | 6 | |||
| RESET Pull-Down Current | IRSTpd1 | 5 | mA | VDD = 1.5V, RST = 0.1V | 6 | ||
| RESET Pull-Down Current | IRSTpd3 | 13 | mA | VDD = 3.3V, RST = 0.1V | 6 | ||
| RESET Pull-Down Current | IRSTpd5 | 17 | mA | VDD = 5V, RST = 0.1V | 6 | ||
| RESET Delay after GATE High | TRSTdel | 160 | ms | GATE = VDD+5V | 7 | ||
| RESET Output Capacitance | COUT_RST | 10 | pF | 7 | |||
| SYSRST Pull-Up Current | Ipu_1.5 | 5 | µA | VDD = 1.5V | 7 | ||
| SYSRST Pull-Up Current | Ipu_5 | 100 | µA | VDD = 5V | 7 | ||
| SYSRST Output Capacitance | Cout_srst | 10 | pF | 7 | |||
| SYSRST Low to GATE Turn-Off | tdelSYS_G | 40 | ns | GATE = 80% of VDD + 5V | 7 | ||
| GATE Turn-On/Off Current Temperature Coefficient | TC_IGATE | 0.2 | nA/°C | 7 | |||
| GATE Pull-Down High Current | IGATEoff_h | 88 | mA | GATE = VDD, UVLO = 0V | 7 | ||
| IC Supply Current | IVDD_3.3V | 0.14 | mA | VDD = 3.3V | 7 | ||
| IC Supply Current | IVDD_1.5V | 0.1 | mA | VDD = 1.5V | 7 | ||
| Stand By IC Supply Current | IVDD_sb | 1 | µA | VDD = 5V, ENABLE = 0V | 7 | ||
| VDD Power-on Reset | VDD_POR | 1 | V | 7 |
CAD (KiCad official)
- Symbol:
ISL6123IRZA - Footprint:
Package_DFN_QFN:QFN-24-1EP_4x4mm_P0.5mm_EP2.6x2.6mm - 3D model: QFN-24-EP(4x4) (KiCad packages3D, STEP)
- 3D model files:
isl6123irza-etched.step/isl6123irza-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);isl6123irza.step/isl6123irza.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: RENESAS datasheet (23 pp, sha256
d52093cf8e8e8b88, retrieved 2026-10-31, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ISL6123IRZA
**RENESAS** · Monitors & Reset Circuits · QFN-24-EP(4x4)
ISL6123IRZA from RENESAS, in a QFN-24-EP(4x4). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | ENABLE | input | Input to start on/off sequencing of supplies (active-high on ISL6123); enable function is disabled for 10ms after UVLO is satisfied. |
| 2 | GATE_A | output | FET gate drive output for channel A, driving the external FET with a 1µA current source to soft-start the ramp into the load. |
| 3 | DLY_OFF_C | passive | Gate off delay timer for channel C; a capacitor to ground is charged by a 1µA source to set the turn-off delay and sequence. |
| 4 | DLY_OFF_D | passive | Gate off delay timer for channel D; a capacitor to ground is charged by a 1µA source to set the turn-off delay and sequence. |
| 5 | GATE_B | output | FET gate drive output for channel B, driving the external FET with a 1µA current source to soft-start the ramp into the load. |
| 6 | GATE_C | output | FET gate drive output for channel C, driving the external FET with a 1µA current source to soft-start the ramp into the load. |
| 7 | GATE_D | output | FET gate drive output for channel D, driving the external FET with a 1µA current source to soft-start the ramp into the load. |
| 8 | DLY_ON_B | passive | Gate on delay timer for channel B; a capacitor to ground is charged with 1µA, 10ms after turn-on is initiated, to set the turn-on delay and sequence. |
| 9 | NC | unconnected | No connect. |
| 10 | GND | power_in | Bias return; IC ground. |
| 11 | NC | unconnected | No connect (ENABLE_2 is used only on the ISL6128). |
| 12 | UVLO_B | input | Undervoltage lockout/monitoring input for channel B with a programmable threshold referenced to an internal 0.633V reference, filtered to ignore transients below 30µs. |
| 13 | DLY_OFF_B | passive | Gate off delay timer for channel B; a capacitor to ground is charged by a 1µA source to set the turn-off delay and sequence. |
| 14 | UVLO_D | input | Undervoltage lockout/monitoring input for channel D with a programmable threshold referenced to an internal 0.633V reference, filtered to ignore transients below 30µs. |
| 15 | DLY_ON_D | passive | Gate on delay timer for channel D; a capacitor to ground is charged with 1µA, 10ms after turn-on is initiated, to set the turn-on delay and sequence. |
| 16 | DLY_ON_C | passive | Gate on delay timer for channel C; a capacitor to ground is charged with 1µA, 10ms after turn-on is initiated, to set the turn-on delay and sequence. |
| 17 | UVLO_C | input | Undervoltage lockout/monitoring input for channel C with a programmable threshold referenced to an internal 0.633V reference, filtered to ignore transients below 30µs. |
| 18 | DLY_OFF_A | passive | Gate off delay timer for channel A; a capacitor to ground is charged by a 1µA source to set the turn-off delay and sequence. |
| 19 | NC | unconnected | No connect. |
| 20 | UVLO_A | input | Undervoltage lockout/monitoring input for channel A with a programmable threshold referenced to an internal 0.633V reference, filtered to ignore transients below 30µs. |
| 21 | DLY_ON_A | passive | Gate on delay timer for channel A; a capacitor to ground is charged with 1µA, 10ms after turn-on is initiated, to set the turn-on delay and sequence. |
| 22 | SYSRST | bidirectional | System reset I/O: as an input, low causes immediate unconditional latch-off of all GATE outputs; as an output, it pulls low on a UV condition, and can be tied to other ICs' SYSRST pins. |
| 23 | VDD | power_in | Chip bias; bias IC from nominal 1.5V to 5V. |
| 24 | RESET | output | Open-drain N-channel RESET output that goes high 150ms after all GATEs are fully enhanced and asserts low when UVLO is not satisfied or ENABLE is deasserted; valid for VDD down to 1V. |
| 25 | EPAD | power_in | Ground exposed pad (die substrate); can be left floating. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | RENESAS |
| Package | QFN-24-EP(4x4) |
| Category | Power Management ICs |
| Pins | 25 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Falling Undervoltage Lockout Threshold | VUVLOvth | 619 | 633 | 647 | mV | TJ = +25°C | 6 |
| Delay Charging Current | DLY_ichg | 0.92 | 1 | 1.08 | µA | VDLY = 0V | 6 |
| Delay Threshold Voltage | DLY_Vth | 1.238 | 1.266 | 1.294 | V | | 6 |
| GATE Turn-On Current | IGATEon | 0.8 | 1.1 | 1.4 | µA | GATE = 0V | 7 |
| GATE Turn-Off Current | IGATEoff_l | -1.4 | -1.05 | -0.8 | µA | GATE = VDD, Disabled | 7 |
| GATE High Voltage (VDD < 2V) | VGATEh | 4.9 | | | V | VDD < 2V, TJ = +25°C; printed as VDD + 4.9V | 7 |
| GATE High Voltage (VDD > 2V) | VGATEh | 5 | | 5.3 | V | VDD > 2V; printed as VDD + 5V to VDD + 5.3V | 7 |
| GATE Low Voltage | VGATEl | 0 | | 0.1 | V | Gate Low Voltage, VDD = 1V | 7 |
| IC Supply Current | IVDD_5V | | 0.2 | 0.5 | mA | VDD = 5V | 7 |
| Undervoltage Lockout Threshold Range | RUVLOvth | | | 7 | mV | Max VUVLOvth - Min VUVLOvth | 6 |
| Delay Charging Current Range | DLY_ichg_r | | | 0.08 | µA | DLY_ichg(max) - DLY_ichg(min) | 6 |
| GATE Current Range | IGATE_range | | | 0.35 | µA | Within IC IGATE max-min | 7 |
| RESET Output Low | VRSTl | | | 0.1 | V | Measured at VDD = 5V with 5k pull-up resistors | 7 |
| SYSRST Low Output Voltage | Vol_srst | | | 150 | mV | VDD = 1.5V, IOUT = 100µA | 7 |
| VDD Supply Voltage Range | VDD | 1.5 | | 5.5 | V | | 6 |
| Temperature Range | TA | -40 | | 85 | °C | | 6 |
| VDD Absolute Maximum | VDD | | | 6 | V | Relative to GND | 6 |
| GATE Absolute Maximum | GATE | -0.3 | | 6 | V | Printed -0.3V to VDD+6V; max is offset above VDD | 6 |
| UVLO, ENABLE, SYSRST, RESET, DLY_ON, DLY_OFF Absolute Maximum | | -0.3 | | 0.3 | V | Printed -0.3V to VDD + 0.3V; max is offset above VDD | 6 |
| Maximum Junction Temperature | TJ | | | 125 | °C | | 6 |
| Storage Temperature Range | Tstg | -65 | | 150 | °C | | 6 |
| Thermal Resistance Junction-Ambient | θJA | | 46 | | °C/W | 24 Ld 4x4 QFN, free air, Note 4 | 6 |
| Thermal Resistance Junction-Case | θJC | | 8 | | °C/W | 24 Ld 4x4 QFN, Note 5 | 6 |
| UVLO Threshold Tempco | TCUVLOvth | | 40 | | µV/°C | | 6 |
| UVLO Hysteresis | VUVLOhys | | 10 | | mV | | 6 |
| UVLO Delay | TUVLOdel | | 10 | | ms | ENABLE satisfied | 6 |
| Transient Filter Duration | tFIL | | 30 | | µs | VDD, UVLO, ENABLE glitch filter | 6 |
| Delay Charging Current Temperature Coefficient | TC_DLY_ichg | | 0.2 | | nA/°C | | 6 |
| Delay Threshold Voltage Temperature Coefficient | TC_DLY_Vth | | 0.2 | | mV/°C | | 6 |
| ENABLE Threshold | VENh | | 1.2 | | V | | 6 |
| ENABLE Threshold (relative to VDD) | VENh | | 0.5 | | xVDD | Printed 0.5 VDD | 6 |
| ENABLE Hysteresis | VENh - VENl | | 0.2 | | V | Measured at VDD = 1.5V | 6 |
| ENABLE Lockout Delay | tdelEN_LO | | 10 | | ms | UVLO satisfied | 6 |
| ENABLE Input Capacitance | Cin_en | | 5 | | pF | | 6 |
| RESET Pull-Down Current | IRSTpd1 | | 5 | | mA | VDD = 1.5V, RST = 0.1V | 6 |
| RESET Pull-Down Current | IRSTpd3 | | 13 | | mA | VDD = 3.3V, RST = 0.1V | 6 |
| RESET Pull-Down Current | IRSTpd5 | | 17 | | mA | VDD = 5V, RST = 0.1V | 6 |
| RESET Delay after GATE High | TRSTdel | | 160 | | ms | GATE = VDD+5V | 7 |
| RESET Output Capacitance | COUT_RST | | 10 | | pF | | 7 |
| SYSRST Pull-Up Current | Ipu_1.5 | | 5 | | µA | VDD = 1.5V | 7 |
| SYSRST Pull-Up Current | Ipu_5 | | 100 | | µA | VDD = 5V | 7 |
| SYSRST Output Capacitance | Cout_srst | | 10 | | pF | | 7 |
| SYSRST Low to GATE Turn-Off | tdelSYS_G | | 40 | | ns | GATE = 80% of VDD + 5V | 7 |
| GATE Turn-On/Off Current Temperature Coefficient | TC_IGATE | | 0.2 | | nA/°C | | 7 |
| GATE Pull-Down High Current | IGATEoff_h | | 88 | | mA | GATE = VDD, UVLO = 0V | 7 |
| IC Supply Current | IVDD_3.3V | | 0.14 | | mA | VDD = 3.3V | 7 |
| IC Supply Current | IVDD_1.5V | | 0.1 | | mA | VDD = 1.5V | 7 |
| Stand By IC Supply Current | IVDD_sb | | 1 | | µA | VDD = 5V, ENABLE = 0V | 7 |
| VDD Power-on Reset | VDD_POR | | 1 | | V | | 7 |
## CAD (KiCad official)
- Symbol: `ISL6123IRZA`
- Footprint: `Package_DFN_QFN:QFN-24-1EP_4x4mm_P0.5mm_EP2.6x2.6mm`
- 3D model: QFN-24-EP(4x4) (KiCad packages3D, STEP)
- 3D model files: `isl6123irza-etched.step` / `isl6123irza-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `isl6123irza.step` / `isl6123irza.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [RENESAS datasheet](docs/isl6123irza-datasheet.pdf) (23 pp, sha256 `d52093cf8e8e8b88`, retrieved 2026-10-31, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/isl6123irza-datasheet.pdf)