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IS281-4-AXW

Public Made by Adom

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ISOMICRON Transistor, Photovoltaic Output Optoisolators, SSOP-16. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IS281-4-AXW

ISOMICRON · Transistor, Photovoltaic Output Optoisolators · SSOP-16

IS281-4-AXW from ISOMICRON, in a SSOP-16. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Anode passive Anode of the AlGaAs input infrared emitting diode; the input is rated for 50 mA forward current, 1 A peak forward current (100 µs pulse, 100 Hz), and 6 V reverse voltage.
2 Cathode passive Cathode of the AlGaAs input infrared emitting diode; the input is rated for 6 V reverse voltage and 50 mA forward current.
3 Anode passive Anode of the AlGaAs input infrared emitting diode; the input is rated for 50 mA forward current, 1 A peak forward current (100 µs pulse, 100 Hz), and 6 V reverse voltage.
4 Cathode passive Cathode of the AlGaAs input infrared emitting diode; the input is rated for 6 V reverse voltage and 50 mA forward current.
5 Anode passive Anode of the AlGaAs input infrared emitting diode; the input is rated for 50 mA forward current, 1 A peak forward current (100 µs pulse, 100 Hz), and 6 V reverse voltage.
6 Cathode passive Cathode of the AlGaAs input infrared emitting diode; the input is rated for 6 V reverse voltage and 50 mA forward current.
7 Anode passive Anode of the AlGaAs input infrared emitting diode; the input is rated for 50 mA forward current, 1 A peak forward current (100 µs pulse, 100 Hz), and 6 V reverse voltage.
8 Cathode passive Cathode of the AlGaAs input infrared emitting diode; the input is rated for 6 V reverse voltage and 50 mA forward current.
9 Emitter passive Emitter of the silicon planar phototransistor output; emitter-collector voltage is rated at 7 V maximum (VECO).
10 Collector passive Collector of the silicon planar phototransistor output; rated for 80 V collector-emitter voltage (VCEO), 50 mA collector current (IC), and 150 mW output power dissipation.
11 Emitter passive Emitter of the silicon planar phototransistor output; emitter-collector voltage is rated at 7 V maximum (VECO).
12 Collector passive Collector of the silicon planar phototransistor output; rated for 80 V collector-emitter voltage (VCEO), 50 mA collector current (IC), and 150 mW output power dissipation.
13 Emitter passive Emitter of the silicon planar phototransistor output; emitter-collector voltage is rated at 7 V maximum (VECO).
14 Collector passive Collector of the silicon planar phototransistor output; rated for 80 V collector-emitter voltage (VCEO), 50 mA collector current (IC), and 150 mW output power dissipation.
15 Emitter passive Emitter of the silicon planar phototransistor output; emitter-collector voltage is rated at 7 V maximum (VECO).
16 Collector passive Collector of the silicon planar phototransistor output; rated for 80 V collector-emitter voltage (VCEO), 50 mA collector current (IC), and 150 mW output power dissipation.

Key specifications

Parameter Value
Manufacturer ISOMICRON
Package SSOP-16
Category Optoisolators
Pins 16

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Forward Current IF 50 mA 3
Peak Forward Current IFP 1 A 100μs pulse, 100Hz frequency 3
Reverse Voltage VR 6 V 3
Input Power Dissipation PD 70 mW 3
Collector - Emitter Voltage VCEO 80 V 3
Emitter - Collector Voltage VECO 7 V 3
Collector Current IC 50 mA 3
Output Power Dissipation PO 150 mW 3
Total Power Dissipation Ptot 200 mW 3
Isolation Voltage Viso 3750 Vrms AC For 1 Minute, R.H. = 40 ~ 60% 3
Operating Temperature Topr -55 110 °C 3
Storage Temperature Tstg -55 125 °C 3
Soldering Temperature Tsol 260 °C 3
Forward Voltage VF 1.2 1.6 V IF=10mA 4
Reverse Current IR 10 μA VR=6V 4
Input Capacitance Cin 30 250 pF V=0, f=1kHz 4
Collector Dark Current ICEO 100 nA VCE=20V, IF=0 4
Collector-Emitter Breakdown Voltage BVCEO 80 V IC=0.1mA, IF=0 4
Emitter-Collector Breakdown Voltage BVECO 7 V IE=0.1mA, IF=0 4
Current Transfer Ratio CTR 50 600 % IF=5mA, VCE=5V 4
Collector-Emitter Saturation Voltage VCE(sat) 0.1 0.2 V IF=10mA, IC=1mA 4
Floating Capacitance CIO 0.3 1 pF V=0, f=1MHz 4
Response Time (Rise) tr 5 18 μs VCE=2V, IC=2mA 4
Response Time (Fall) tf 3 18 μs RL=100Ω 4

CAD (KiCad official)

  • Symbol: IS281-4-AXW
  • Footprint: Package_SO:SSOP-16_5.3x6.2mm_P0.65mm
  • 3D model: SSOP-16 (KiCad packages3D, STEP)
  • 3D model files: is281-4-axw-etched.step / is281-4-axw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); is281-4-axw.step / is281-4-axw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ISOMICRON datasheet (13 pp, sha256 28be61d093a0a408, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF