component
IS281-4-AXW
Public Made by Adomby adom
ISOMICRON Transistor, Photovoltaic Output Optoisolators, SSOP-16. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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IS281-4-AXW
ISOMICRON · Transistor, Photovoltaic Output Optoisolators · SSOP-16
IS281-4-AXW from ISOMICRON, in a SSOP-16. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Anode | passive | Anode of the AlGaAs input infrared emitting diode; the input is rated for 50 mA forward current, 1 A peak forward current (100 µs pulse, 100 Hz), and 6 V reverse voltage. |
| 2 | Cathode | passive | Cathode of the AlGaAs input infrared emitting diode; the input is rated for 6 V reverse voltage and 50 mA forward current. |
| 3 | Anode | passive | Anode of the AlGaAs input infrared emitting diode; the input is rated for 50 mA forward current, 1 A peak forward current (100 µs pulse, 100 Hz), and 6 V reverse voltage. |
| 4 | Cathode | passive | Cathode of the AlGaAs input infrared emitting diode; the input is rated for 6 V reverse voltage and 50 mA forward current. |
| 5 | Anode | passive | Anode of the AlGaAs input infrared emitting diode; the input is rated for 50 mA forward current, 1 A peak forward current (100 µs pulse, 100 Hz), and 6 V reverse voltage. |
| 6 | Cathode | passive | Cathode of the AlGaAs input infrared emitting diode; the input is rated for 6 V reverse voltage and 50 mA forward current. |
| 7 | Anode | passive | Anode of the AlGaAs input infrared emitting diode; the input is rated for 50 mA forward current, 1 A peak forward current (100 µs pulse, 100 Hz), and 6 V reverse voltage. |
| 8 | Cathode | passive | Cathode of the AlGaAs input infrared emitting diode; the input is rated for 6 V reverse voltage and 50 mA forward current. |
| 9 | Emitter | passive | Emitter of the silicon planar phototransistor output; emitter-collector voltage is rated at 7 V maximum (VECO). |
| 10 | Collector | passive | Collector of the silicon planar phototransistor output; rated for 80 V collector-emitter voltage (VCEO), 50 mA collector current (IC), and 150 mW output power dissipation. |
| 11 | Emitter | passive | Emitter of the silicon planar phototransistor output; emitter-collector voltage is rated at 7 V maximum (VECO). |
| 12 | Collector | passive | Collector of the silicon planar phototransistor output; rated for 80 V collector-emitter voltage (VCEO), 50 mA collector current (IC), and 150 mW output power dissipation. |
| 13 | Emitter | passive | Emitter of the silicon planar phototransistor output; emitter-collector voltage is rated at 7 V maximum (VECO). |
| 14 | Collector | passive | Collector of the silicon planar phototransistor output; rated for 80 V collector-emitter voltage (VCEO), 50 mA collector current (IC), and 150 mW output power dissipation. |
| 15 | Emitter | passive | Emitter of the silicon planar phototransistor output; emitter-collector voltage is rated at 7 V maximum (VECO). |
| 16 | Collector | passive | Collector of the silicon planar phototransistor output; rated for 80 V collector-emitter voltage (VCEO), 50 mA collector current (IC), and 150 mW output power dissipation. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ISOMICRON |
| Package | SSOP-16 |
| Category | Optoisolators |
| Pins | 16 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward Current | IF | 50 | mA | 3 | |||
| Peak Forward Current | IFP | 1 | A | 100μs pulse, 100Hz frequency | 3 | ||
| Reverse Voltage | VR | 6 | V | 3 | |||
| Input Power Dissipation | PD | 70 | mW | 3 | |||
| Collector - Emitter Voltage | VCEO | 80 | V | 3 | |||
| Emitter - Collector Voltage | VECO | 7 | V | 3 | |||
| Collector Current | IC | 50 | mA | 3 | |||
| Output Power Dissipation | PO | 150 | mW | 3 | |||
| Total Power Dissipation | Ptot | 200 | mW | 3 | |||
| Isolation Voltage | Viso | 3750 | Vrms | AC For 1 Minute, R.H. = 40 ~ 60% | 3 | ||
| Operating Temperature | Topr | -55 | 110 | °C | 3 | ||
| Storage Temperature | Tstg | -55 | 125 | °C | 3 | ||
| Soldering Temperature | Tsol | 260 | °C | 3 | |||
| Forward Voltage | VF | 1.2 | 1.6 | V | IF=10mA | 4 | |
| Reverse Current | IR | 10 | μA | VR=6V | 4 | ||
| Input Capacitance | Cin | 30 | 250 | pF | V=0, f=1kHz | 4 | |
| Collector Dark Current | ICEO | 100 | nA | VCE=20V, IF=0 | 4 | ||
| Collector-Emitter Breakdown Voltage | BVCEO | 80 | V | IC=0.1mA, IF=0 | 4 | ||
| Emitter-Collector Breakdown Voltage | BVECO | 7 | V | IE=0.1mA, IF=0 | 4 | ||
| Current Transfer Ratio | CTR | 50 | 600 | % | IF=5mA, VCE=5V | 4 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.1 | 0.2 | V | IF=10mA, IC=1mA | 4 | |
| Floating Capacitance | CIO | 0.3 | 1 | pF | V=0, f=1MHz | 4 | |
| Response Time (Rise) | tr | 5 | 18 | μs | VCE=2V, IC=2mA | 4 | |
| Response Time (Fall) | tf | 3 | 18 | μs | RL=100Ω | 4 |
CAD (KiCad official)
- Symbol:
IS281-4-AXW - Footprint:
Package_SO:SSOP-16_5.3x6.2mm_P0.65mm - 3D model: SSOP-16 (KiCad packages3D, STEP)
- 3D model files:
is281-4-axw-etched.step/is281-4-axw-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);is281-4-axw.step/is281-4-axw.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ISOMICRON datasheet (13 pp, sha256
28be61d093a0a408, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).