component
IS25WP016D-JNLE
Public Made by Adomby adom
ISSI Integrated Silicon Solution NOR FLASH, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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IS25WP016D-JNLE
ISSI Integrated Silicon Solution · NOR FLASH · SOIC-8
IS25WP016D-JNLE from ISSI Integrated Silicon Solution, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | CE# | input | Chip Enable: driving CE# high deselects the device and puts the outputs in high impedance, while CE# must transition from high to low after power-up before a new instruction is accepted. |
| 2 | SO (IO1) | bidirectional | Serial Data Output: in standard SPI it reads data or status on the falling edge of SCK, and it becomes the bidirectional IO1 in Dual and Quad SPI modes. |
| 3 | WP# (IO2) | bidirectional | Write Protect: with SRWD set to 1, pulling WP# low write-protects the Status Register bits, and it becomes IO2 when QE is set to 1, which disables the WP# function. |
| 4 | GND | power_in | Ground: connect to ground when referenced to Vcc. |
| 5 | SI (IO0) | bidirectional | Serial Data Input: in standard SPI it writes instructions, addresses or data on the rising edge of SCK, and it becomes the bidirectional IO0 in Dual and Quad SPI modes. |
| 6 | SCK | input | Serial Data Clock: provides the synchronized clock for input and output timing operations. |
| 7 | HOLD# or RESET# (IO3) | bidirectional | HOLD# is active low and pauses serial communication while CE# is low, with SO at high impedance; the pin can be set to RESET# via the P7 bit of the Read Register (default HOLD#), and it becomes IO3 when QE is set to 1. |
| 8 | Vcc | power_in | Power: device core power supply; for the IS25WP016D the stated operating range is 1.65V to 1.95V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ISSI Integrated Silicon Solution |
| Package | SOIC-8 |
| Category | Memory |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Storage temperature | -65 | 150 | °C | 93 | |||
| VCC supply voltage (IS25WP) | VCC | -0.5 | 2.5 | V | IS25WP | 93 | |
| Input voltage with respect to ground on all pins | -0.5 | V | 93 | ||||
| All output voltage with respect to ground | -0.5 | V | 93 | ||||
| Electrostatic discharge voltage (Human Body Model) | -2000 | 2000 | V | Human Body Model, ANSI/ESDA/JEDEC JS-001 | 93 | ||
| Ambient operating temperature, extended grade E | -40 | 105 | °C | Extended grade E | 93 | ||
| VCC power supply (IS25WP) | VCC | 1.65 | 1.8 | 1.95 | V | IS25WP | 93 |
| VCC active read current, NORD | ICC1 | 4 | 12 | mA | NORD at 50MHz | 94 | |
| VCC active read current, FRD single | ICC1 | 6 | 14 | mA | FRD Single at 133MHz | 94 | |
| VCC active read current, FRD dual | ICC1 | 8 | 15 | mA | FRD Dual at 133MHz | 94 | |
| VCC active read current, FRD quad | ICC1 | 10 | 17 | mA | FRD Quad at 133MHz | 94 | |
| VCC active read current, FRD quad | ICC1 | 8 | 15 | mA | FRD Quad at 84MHz | 94 | |
| VCC active read current, FRD quad | ICC1 | 9 | 16 | mA | FRD Quad at 104MHz | 94 | |
| VCC active read current, FRD single DTR | ICC1 | 6 | 14 | mA | FRD Single DTR at 66MHz | 94 | |
| VCC active read current, FRD dual DTR | ICC1 | 8 | 15 | mA | FRD Dual DTR at 66MHz | 94 | |
| VCC active read current, FRD quad DTR | ICC1 | 10 | 17 | mA | FRD Quad DTR at 66MHz | 94 | |
| VCC program current | ICC2 | 22 | 25 | mA | CE# = VCC, 85°C | 94 | |
| VCC program current | ICC2 | 25 | mA | CE# = VCC, 105°C | 94 | ||
| VCC erase current (SER/BER32/BER64) | ICC4 | 22 | 25 | mA | CE# = VCC, 85°C | 94 | |
| VCC erase current (SER/BER32/BER64) | ICC4 | 25 | mA | CE# = VCC, 105°C | 94 | ||
| VCC standby current, CMOS | ISB1 | 8 | 15 | µA | CE# = VCC, VIN = GND or VCC, 85°C | 94 | |
| VCC standby current, CMOS | ISB1 | 20 | µA | CE# = VCC, VIN = GND or VCC, 105°C | 94 | ||
| VCC standby current, CMOS | ISB1 | 30 | µA | CE# = VCC, VIN = GND or VCC, 125°C | 94 | ||
| Deep power down current (IS25WP) | ISB2 | 1 | 5 | µA | IS25WP CE# = VCC, VIN = GND or VCC, 85°C | 94 | |
| Deep power down current (IS25WP) | ISB2 | 10 | µA | IS25WP CE# = VCC, VIN = GND or VCC, 105°C | 94 | ||
| Deep power down current (IS25WP) | ISB2 | 15 | µA | IS25WP CE# = VCC, VIN = GND or VCC, 125°C | 94 | ||
| Input leakage current | ILI | -1 | 1 | µA | VIN = 0V to VCC | 94 | |
| Output leakage current | ILO | -1 | 1 | µA | VIN = 0V to VCC | 94 | |
| Input low voltage | VIL | -0.5 | V | 94 | |||
| Output low voltage | VOL | 0.2 | V | IOL = 100 µA | 94 | ||
| Clock frequency except fast read Quad I/O, QPI, DTR and read (03h) | fCT | 0 | 133 | MHz | except fast read Quad I/O, QPI, DTR and read (03h) | 96 | |
| Clock frequency for fast read Quad I/O and QPI (IS25WP) | fCT | 0 | 104 | MHz | Fast read Quad I/O and QPI, IS25WP | 96 | |
| Clock frequency for fast read DTR | fCT | 0 | 66 | MHz | SPI DTR, Dual DTR, Dual I/O DTR, Quad I/O DTR, and QPI DTR | 96 | |
| Clock frequency for read (03h) | fC | 0 | 50 | MHz | Read (03h) | 96 | |
| CE# high time | tCEH | 7 | ns | 96 | |||
| CE# setup time | tCS | 5 | ns | 96 | |||
| CE# hold time | tCH | 5 | ns | 96 | |||
| CE# not active hold time | tCHSL | 2.7 | ns | 96 | |||
| CE# not active setup time | tSHCH | 2.7 | ns | 96 | |||
| Data in setup time (STR) | tDS | 2 | ns | STR | 96 | ||
| Data in hold time (STR) | tDH | 2 | ns | STR | 96 | ||
| Output valid at 133MHz | tV | 7 | ns | @133MHz, CL = 15pF | 96 | ||
| Output valid at 104MHz | tV | 8 | ns | @104MHz, CL = 30pF | 96 | ||
| Output hold time | tOH | 2 | ns | 96 | |||
| Output disable time | tDIS | 8 | ns | 96 | |||
| Sector erase time (4Kbyte) | tEC | 70 | 300 | ms | 96 | ||
| Block erase time (32Kbyte) | 0.1 | 0.5 | s | 96 | |||
| Block erase time (64Kbyte) | 0.15 | 1 | s | 96 | |||
| Chip erase time (16Mb) | 4 | 12 | 96 | ||||
| Page program time | tPP | 0.2 | 0.8 | ms | 96 | ||
| Vcc(min) to CE# low | tVCE | 300 | us | Vcc(min) to CE# low | 101 | ||
| Write inhibit voltage (IS25WP) | VWI | 1.4 | V | IS25WP | 101 | ||
| Release deep power down (IS25WP) | tRES1 | 5 | µs | IS25WP | 97 | ||
| Deep power down entry time | tDP | 3 | µs | 97 | |||
| Write status register time | tW | 2 | 15 | ms | 97 | ||
| Suspend to read ready | tSUS | 100 | µs | 97 | |||
| Resume to next suspend | TRS | 80 | µs | 97 | |||
| Endurance | 100000 | cycles | JEDEC Standard A117 | 102 |
CAD (KiCad official)
- Symbol:
IS25WP016D-JNLE - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
is25wp016d-jnle-etched.step/is25wp016d-jnle-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);is25wp016d-jnle.step/is25wp016d-jnle.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ISSI Integrated Silicon Solution datasheet (115 pp, sha256
b7472bc6861b38f4, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).