component
IRLR8726TRLPBF-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRLR8726TRLPBF-HXY
HXY MOSFET · MOSFETs · TO252-2L
IRLR8726TRLPBF-HXY from HXY MOSFET, in a TO252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is rated VGS = ±20 V in the absolute maximum ratings. |
| 2 | D | passive | Drain terminal; the drain-source voltage is rated VDS = 30 V. |
| 3 | S | passive | Source terminal; the continuous source current IS is limited to 80 A in the electrical characteristics. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 3.8 | 5.5 | mΩ | VGS=10V, ID=30A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 7.5 | 9 | mΩ | VGS=4.5V, ID=15A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=24V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=24V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Resistance | Rg | 1.7 | 3.4 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 | |
| Continuous Source Current | IS | 80 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | 160 | A | 2 | |||
| Diode Forward Voltage | VSD | 1 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 100 | A | VGS @ 10V, TC=25℃ | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 57 | A | VGS @ 10V, TC=100℃ | 1 | ||
| Continuous Drain Current (first of unlabeled pair) | ID@TA=25℃ | 27 | A | VGS @ 10V, TA=25℃; printed as '27 17', columns unlabeled | 1 | ||
| Continuous Drain Current (second of unlabeled pair) | ID@TA=25℃ | 17 | A | VGS @ 10V, TA=25℃; printed as '27 17', columns unlabeled | 1 | ||
| Continuous Drain Current (first of unlabeled pair) | ID@TA=70℃ | 23 | A | VGS @ 10V, TA=70℃; printed as '23 14.5', columns unlabeled | 1 | ||
| Continuous Drain Current (second of unlabeled pair) | ID@TA=70℃ | 14.5 | A | VGS @ 10V, TA=70℃; printed as '23 14.5', columns unlabeled | 1 | ||
| Pulsed Drain Current | IDM | 160 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 115.2 | mJ | 1 | |||
| Avalanche Current | IAS | 48 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 53 | W | TC=25℃ | 1 | ||
| Total Power Dissipation (first of unlabeled pair) | PD@TA=25℃ | 6 | W | TA=25℃; printed as '6 2.4', columns unlabeled | 1 | ||
| Total Power Dissipation (second of unlabeled pair) | PD@TA=25℃ | 2.4 | W | TA=25℃; printed as '6 2.4', columns unlabeled | 1 | ||
| Storage Temperature Range | TSTG | -55 | 175 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 62 | ℃/W | Steady State (note 1: 1 inch2 FR-4 board, 2OZ copper) | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 25 | ℃/W | t≤10s | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 2.8 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
IRLR8726TRLPBF-HXY - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO252-2L (KiCad packages3D, STEP)
- 3D model files:
irlr8726trlpbf-hxy-etched.step/irlr8726trlpbf-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irlr8726trlpbf-hxy.step/irlr8726trlpbf-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
c9e6b4c031882535, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRLR8726TRLPBF-HXY
**HXY MOSFET** · MOSFETs · TO252-2L
IRLR8726TRLPBF-HXY from HXY MOSFET, in a TO252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is rated VGS = ±20 V in the absolute maximum ratings. |
| 2 | D | passive | Drain terminal; the drain-source voltage is rated VDS = 30 V. |
| 3 | S | passive | Source terminal; the continuous source current IS is limited to 80 A in the electrical characteristics. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 3.8 | 5.5 | mΩ | VGS=10V, ID=30A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 7.5 | 9 | mΩ | VGS=4.5V, ID=15A | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=24V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | 5 | uA | VDS=24V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Gate Resistance | Rg | | 1.7 | 3.4 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 |
| Continuous Source Current | IS | | | 80 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM | | | 160 | A | | 2 |
| Diode Forward Voltage | VSD | | | 1 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID@TC=25℃ | | | 100 | A | VGS @ 10V, TC=25℃ | 1 |
| Continuous Drain Current | ID@TC=100℃ | | | 57 | A | VGS @ 10V, TC=100℃ | 1 |
| Continuous Drain Current (first of unlabeled pair) | ID@TA=25℃ | | | 27 | A | VGS @ 10V, TA=25℃; printed as '27 17', columns unlabeled | 1 |
| Continuous Drain Current (second of unlabeled pair) | ID@TA=25℃ | | | 17 | A | VGS @ 10V, TA=25℃; printed as '27 17', columns unlabeled | 1 |
| Continuous Drain Current (first of unlabeled pair) | ID@TA=70℃ | | | 23 | A | VGS @ 10V, TA=70℃; printed as '23 14.5', columns unlabeled | 1 |
| Continuous Drain Current (second of unlabeled pair) | ID@TA=70℃ | | | 14.5 | A | VGS @ 10V, TA=70℃; printed as '23 14.5', columns unlabeled | 1 |
| Pulsed Drain Current | IDM | | | 160 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 115.2 | mJ | | 1 |
| Avalanche Current | IAS | | | 48 | A | | 1 |
| Total Power Dissipation | PD@TC=25℃ | | | 53 | W | TC=25℃ | 1 |
| Total Power Dissipation (first of unlabeled pair) | PD@TA=25℃ | | | 6 | W | TA=25℃; printed as '6 2.4', columns unlabeled | 1 |
| Total Power Dissipation (second of unlabeled pair) | PD@TA=25℃ | | | 2.4 | W | TA=25℃; printed as '6 2.4', columns unlabeled | 1 |
| Storage Temperature Range | TSTG | -55 | | 175 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 175 | ℃ | | 1 |
| Thermal Resistance Junction-ambient | RθJA | | | 62 | ℃/W | Steady State (note 1: 1 inch2 FR-4 board, 2OZ copper) | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | | 25 | ℃/W | t≤10s | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 2.8 | ℃/W | | 1 |
## CAD (KiCad official)
- Symbol: `IRLR8726TRLPBF-HXY`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO252-2L (KiCad packages3D, STEP)
- 3D model files: `irlr8726trlpbf-hxy-etched.step` / `irlr8726trlpbf-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irlr8726trlpbf-hxy.step` / `irlr8726trlpbf-hxy.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757975993954902016) (6 pp, sha256 `c9e6b4c031882535`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irlr8726trlpbf-hxy-datasheet.pdf)