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IRLR8726TRLPBF-HXY

Public Made by Adom

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HXY MOSFET MOSFETs, TO252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRLR8726TRLPBF-HXY

HXY MOSFET · MOSFETs · TO252-2L

IRLR8726TRLPBF-HXY from HXY MOSFET, in a TO252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-source voltage is rated VGS = ±20 V in the absolute maximum ratings.
2 D passive Drain terminal; the drain-source voltage is rated VDS = 30 V.
3 S passive Source terminal; the continuous source current IS is limited to 80 A in the electrical characteristics.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 3.8 5.5 mΩ VGS=10V, ID=30A 2
Static Drain-Source On-Resistance RDS(ON) 7.5 9 mΩ VGS=4.5V, ID=15A 2
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Resistance Rg 1.7 3.4 Ω VDS=0V, VGS=0V, f=1MHz 2
Continuous Source Current IS 80 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 160 A 2
Diode Forward Voltage VSD 1 V VGS=0V, IS=1A, TJ=25℃ 2
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 100 A VGS @ 10V, TC=25℃ 1
Continuous Drain Current ID@TC=100℃ 57 A VGS @ 10V, TC=100℃ 1
Continuous Drain Current (first of unlabeled pair) ID@TA=25℃ 27 A VGS @ 10V, TA=25℃; printed as '27 17', columns unlabeled 1
Continuous Drain Current (second of unlabeled pair) ID@TA=25℃ 17 A VGS @ 10V, TA=25℃; printed as '27 17', columns unlabeled 1
Continuous Drain Current (first of unlabeled pair) ID@TA=70℃ 23 A VGS @ 10V, TA=70℃; printed as '23 14.5', columns unlabeled 1
Continuous Drain Current (second of unlabeled pair) ID@TA=70℃ 14.5 A VGS @ 10V, TA=70℃; printed as '23 14.5', columns unlabeled 1
Pulsed Drain Current IDM 160 A 1
Single Pulse Avalanche Energy EAS 115.2 mJ 1
Avalanche Current IAS 48 A 1
Total Power Dissipation PD@TC=25℃ 53 W TC=25℃ 1
Total Power Dissipation (first of unlabeled pair) PD@TA=25℃ 6 W TA=25℃; printed as '6 2.4', columns unlabeled 1
Total Power Dissipation (second of unlabeled pair) PD@TA=25℃ 2.4 W TA=25℃; printed as '6 2.4', columns unlabeled 1
Storage Temperature Range TSTG -55 175 ℃ 1
Operating Junction Temperature Range TJ -55 175 ℃ 1
Thermal Resistance Junction-ambient RθJA 62 ℃/W Steady State (note 1: 1 inch2 FR-4 board, 2OZ copper) 1
Thermal Resistance Junction-Ambient RθJA 25 ℃/W t≤10s 1
Thermal Resistance Junction-Case RθJC 2.8 ℃/W 1

CAD (KiCad official)

  • Symbol: IRLR8726TRLPBF-HXY
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO252-2L (KiCad packages3D, STEP)
  • 3D model files: irlr8726trlpbf-hxy-etched.step / irlr8726trlpbf-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irlr8726trlpbf-hxy.step / irlr8726trlpbf-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 c9e6b4c031882535, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF