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IRLR3636TRPBF

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Infineon Technologies MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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docs irlr3636trpbf: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain… · Ray 17d ago
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irlr3636trpbf-etched.glb irlr3636trpbf: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain… · Ray 17d ago
irlr3636trpbf-etched.step irlr3636trpbf: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain… · Ray 17d ago
irlr3636trpbf-hero.glb irlr3636trpbf: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain… · Ray 17d ago
irlr3636trpbf-hero.overlay.json irlr3636trpbf: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain… · Ray 17d ago
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README.md irlr3636trpbf: specified limits as data (metadata.characteristics, 48 rows from the datasheet) · Ray 18d ago

IRLR3636TRPBF

Infineon Technologies · MOSFETs · TO-252

IRLR3636TRPBF from Infineon Technologies, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the HEXFET; VGS is rated at ±16 V (absolute maximum, page 1).
2 D passive Drain terminal; VDSS is 60 V, with continuous ID of 99 A at TC = 25°C (silicon limited) and 50 A (package limited), per page 1.
3 S passive Source terminal; the body diode is an integral reverse p-n junction with VSD of 1.3 V max at IS = 50 A, per page 2.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous Drain Current, VGS @ 10V (Silicon Limited), TC = 25°C ID 99 A VGS @ 10V, TC = 25°C 1
Continuous Drain Current, VGS @ 10V (Silicon Limited), TC = 100°C ID 70 A VGS @ 10V, TC = 100°C 1
Continuous Drain Current, VGS @ 10V (Package Limited), TC = 25°C ID 50 A VGS @ 10V, TC = 25°C 1
Pulsed Drain Current IDM 396 A 1
Maximum Power Dissipation PD 143 W TC = 25°C 1
Linear Derating Factor 0.95 W/°C 1
Gate-to-Source Voltage VGS -16 16 V 1
Peak Diode Recovery dv/dt dv/dt 22 V/ns 1
Operating Junction Temperature Range TJ -55 175 °C 1
Storage Temperature Range TSTG -55 175 °C 1
Soldering Temperature 300 °C 10 seconds, 1.6mm from case 1
Single Pulse Avalanche Energy (EAS) EAS 170 mJ Thermally limited 1
Avalanche Current IAR 50 A 1
Junction-to-Case RθJC 1.05 °C/W 1
Junction-to-Ambient (PCB Mount) RθJA 50 °C/W PCB mount 1
Junction-to-Ambient RθJA 110 °C/W 1
Drain-to-Source Breakdown Voltage V(BR)DSS 60 V VGS = 0V, ID = 250µA 2
Static Drain-to-Source On-Resistance RDS(on) 5.4 6.8 mΩ VGS = 10V, ID = 50A 2
Static Drain-to-Source On-Resistance RDS(on) 6.6 8.3 mΩ VGS = 4.5V, ID = 50A 2
Gate Threshold Voltage VGS(th) 1 2.5 V VDS = VGS, ID = 100µA 2
Drain-to-Source Leakage Current IDSS 20 µA VDS = 60V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 250 µA VDS = 60V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 16V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -16V 2
Forward Transconductance gfs 31 S 2
Total Gate Charge Qg 33 49 nC 2
Diode Forward Voltage VSD 1.3 V TJ = 25°C, IS = 50A, VGS = 0V 2
Continuous Source Current (Body Diode) IS 99 A 2
Pulsed Source Current (Body Diode) ISM 396 A 2
Breakdown Voltage Temp. Coefficient ΔV(BR)DSS/ΔTJ 0.07 V/°C Reference to 25°C, ID = 5mA 2
Internal Gate Resistance RG(int) 0.6 Ω 2
Gate-to-Source Charge Qgs 11 nC 2
Gate-to-Drain (Miller) Charge Qgd 15 nC 2
Total Gate Charge Sync. (Qg - Qgd) Qsync 18 nC 2
Turn-On Delay Time td(on) 45 ns 2
Rise Time tr 216 ns 2
Turn-Off Delay Time td(off) 43 ns 2
Fall Time tf 69 ns 2
Input Capacitance Ciss 3779 pF 2
Output Capacitance Coss 332 pF 2
Reverse Transfer Capacitance Crss 163 pF 2
Effective Output Capacitance (Energy Related) Coss eff. (ER) 437 pF 2
Effective Output Capacitance (Time Related) Coss eff. (TR) 636 pF 2
Reverse Recovery Time trr 27 ns TJ = 25°C, VR = 51V, IF = 50A 2
Reverse Recovery Time trr 32 ns TJ = 125°C, VR = 51V, IF = 50A 2
Reverse Recovery Charge Qrr 31 nC TJ = 25°C, di/dt = 100A/µs 2
Reverse Recovery Charge Qrr 43 nC TJ = 125°C, di/dt = 100A/µs 2
Reverse Recovery Current IRRM 2.1 A TJ = 25°C 2

CAD (KiCad official)

  • Symbol: IRLR3636TRPBF
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: irlr3636trpbf-etched.step / irlr3636trpbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irlr3636trpbf.step / irlr3636trpbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (10 pp, sha256 4f9fc18ba032309e, retrieved 2026-10-10, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF