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IRLR3636TRPBF
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Infineon Technologies MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRLR3636TRPBF
Infineon Technologies · MOSFETs · TO-252
IRLR3636TRPBF from Infineon Technologies, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the HEXFET; VGS is rated at ±16 V (absolute maximum, page 1). |
| 2 | D | passive | Drain terminal; VDSS is 60 V, with continuous ID of 99 A at TC = 25°C (silicon limited) and 50 A (package limited), per page 1. |
| 3 | S | passive | Source terminal; the body diode is an integral reverse p-n junction with VSD of 1.3 V max at IS = 50 A, per page 2. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous Drain Current, VGS @ 10V (Silicon Limited), TC = 25°C | ID | 99 | A | VGS @ 10V, TC = 25°C | 1 | ||
| Continuous Drain Current, VGS @ 10V (Silicon Limited), TC = 100°C | ID | 70 | A | VGS @ 10V, TC = 100°C | 1 | ||
| Continuous Drain Current, VGS @ 10V (Package Limited), TC = 25°C | ID | 50 | A | VGS @ 10V, TC = 25°C | 1 | ||
| Pulsed Drain Current | IDM | 396 | A | 1 | |||
| Maximum Power Dissipation | PD | 143 | W | TC = 25°C | 1 | ||
| Linear Derating Factor | 0.95 | W/°C | 1 | ||||
| Gate-to-Source Voltage | VGS | -16 | 16 | V | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 22 | V/ns | 1 | |||
| Operating Junction Temperature Range | TJ | -55 | 175 | °C | 1 | ||
| Storage Temperature Range | TSTG | -55 | 175 | °C | 1 | ||
| Soldering Temperature | 300 | °C | 10 seconds, 1.6mm from case | 1 | |||
| Single Pulse Avalanche Energy (EAS) | EAS | 170 | mJ | Thermally limited | 1 | ||
| Avalanche Current | IAR | 50 | A | 1 | |||
| Junction-to-Case | RθJC | 1.05 | °C/W | 1 | |||
| Junction-to-Ambient (PCB Mount) | RθJA | 50 | °C/W | PCB mount | 1 | ||
| Junction-to-Ambient | RθJA | 110 | °C/W | 1 | |||
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 60 | V | VGS = 0V, ID = 250µA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 5.4 | 6.8 | mΩ | VGS = 10V, ID = 50A | 2 | |
| Static Drain-to-Source On-Resistance | RDS(on) | 6.6 | 8.3 | mΩ | VGS = 4.5V, ID = 50A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 2.5 | V | VDS = VGS, ID = 100µA | 2 | |
| Drain-to-Source Leakage Current | IDSS | 20 | µA | VDS = 60V, VGS = 0V | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 250 | µA | VDS = 60V, VGS = 0V, TJ = 125°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS = 16V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS = -16V | 2 | ||
| Forward Transconductance | gfs | 31 | S | 2 | |||
| Total Gate Charge | Qg | 33 | 49 | nC | 2 | ||
| Diode Forward Voltage | VSD | 1.3 | V | TJ = 25°C, IS = 50A, VGS = 0V | 2 | ||
| Continuous Source Current (Body Diode) | IS | 99 | A | 2 | |||
| Pulsed Source Current (Body Diode) | ISM | 396 | A | 2 | |||
| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/ΔTJ | 0.07 | V/°C | Reference to 25°C, ID = 5mA | 2 | ||
| Internal Gate Resistance | RG(int) | 0.6 | Ω | 2 | |||
| Gate-to-Source Charge | Qgs | 11 | nC | 2 | |||
| Gate-to-Drain (Miller) Charge | Qgd | 15 | nC | 2 | |||
| Total Gate Charge Sync. (Qg - Qgd) | Qsync | 18 | nC | 2 | |||
| Turn-On Delay Time | td(on) | 45 | ns | 2 | |||
| Rise Time | tr | 216 | ns | 2 | |||
| Turn-Off Delay Time | td(off) | 43 | ns | 2 | |||
| Fall Time | tf | 69 | ns | 2 | |||
| Input Capacitance | Ciss | 3779 | pF | 2 | |||
| Output Capacitance | Coss | 332 | pF | 2 | |||
| Reverse Transfer Capacitance | Crss | 163 | pF | 2 | |||
| Effective Output Capacitance (Energy Related) | Coss eff. (ER) | 437 | pF | 2 | |||
| Effective Output Capacitance (Time Related) | Coss eff. (TR) | 636 | pF | 2 | |||
| Reverse Recovery Time | trr | 27 | ns | TJ = 25°C, VR = 51V, IF = 50A | 2 | ||
| Reverse Recovery Time | trr | 32 | ns | TJ = 125°C, VR = 51V, IF = 50A | 2 | ||
| Reverse Recovery Charge | Qrr | 31 | nC | TJ = 25°C, di/dt = 100A/µs | 2 | ||
| Reverse Recovery Charge | Qrr | 43 | nC | TJ = 125°C, di/dt = 100A/µs | 2 | ||
| Reverse Recovery Current | IRRM | 2.1 | A | TJ = 25°C | 2 |
CAD (KiCad official)
- Symbol:
IRLR3636TRPBF - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
irlr3636trpbf-etched.step/irlr3636trpbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irlr3636trpbf.step/irlr3636trpbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (10 pp, sha256
4f9fc18ba032309e, retrieved 2026-10-10, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).