component
IRLR3636TRPBF
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
irlr3636trpbf: specified limits as data (metadata.characteristics, 48 rows from the datasheet)
2 files changed
+639−1
README.md+55@@ -21,6 +21,61 @@ IRLR3636TRPBF from Infineon Technologies, in a TO-252. Pinout and pin descriptio | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Continuous Drain Current, VGS @ 10V (Silicon Limited), TC = 25°C | ID | | | 99 | A | VGS @ 10V, TC = 25°C | 1 |+| Continuous Drain Current, VGS @ 10V (Silicon Limited), TC = 100°C | ID | | | 70 | A | VGS @ 10V, TC = 100°C | 1 |+| Continuous Drain Current, VGS @ 10V (Package Limited), TC = 25°C | ID | | | 50 | A | VGS @ 10V, TC = 25°C | 1 |+| Pulsed Drain Current | IDM | | | 396 | A | | 1 |+| Maximum Power Dissipation | PD | | | 143 | W | TC = 25°C | 1 |+| Linear Derating Factor | | | | 0.95 | W/°C | | 1 |+| Gate-to-Source Voltage | VGS | -16 | | 16 | V | | 1 |+| Peak Diode Recovery dv/dt | dv/dt | | | 22 | V/ns | | 1 |+| Operating Junction Temperature Range | TJ | -55 | | 175 | °C | | 1 |+| Storage Temperature Range | TSTG | -55 | | 175 | °C | | 1 |+| Soldering Temperature | | | | 300 | °C | 10 seconds, 1.6mm from case | 1 |+| Single Pulse Avalanche Energy (EAS) | EAS | | | 170 | mJ | Thermally limited | 1 |+| Avalanche Current | IAR | | | 50 | A | | 1 |+| Junction-to-Case | RθJC | | | 1.05 | °C/W | | 1 |+| Junction-to-Ambient (PCB Mount) | RθJA | | | 50 | °C/W | PCB mount | 1 |+| Junction-to-Ambient | RθJA | | | 110 | °C/W | | 1 |+| Drain-to-Source Breakdown Voltage | V(BR)DSS | 60 | | | V | VGS = 0V, ID = 250µA | 2 |+| Static Drain-to-Source On-Resistance | RDS(on) | | 5.4 | 6.8 | mΩ | VGS = 10V, ID = 50A | 2 |+| Static Drain-to-Source On-Resistance | RDS(on) | | 6.6 | 8.3 | mΩ | VGS = 4.5V, ID = 50A | 2 |+| Gate Threshold Voltage | VGS(th) | 1 | | 2.5 | V | VDS = VGS, ID = 100µA | 2 |+| Drain-to-Source Leakage Current | IDSS | | | 20 | µA | VDS = 60V, VGS = 0V | 2 |+| Drain-to-Source Leakage Current | IDSS | | | 250 | µA | VDS = 60V, VGS = 0V, TJ = 125°C | 2 |+| Gate-to-Source Forward Leakage | IGSS | | | 100 | nA | VGS = 16V | 2 |+| Gate-to-Source Reverse Leakage | IGSS | | | -100 | nA | VGS = -16V | 2 |+| Forward Transconductance | gfs | 31 | | | S | | 2 |+| Total Gate Charge | Qg | | 33 | 49 | nC | | 2 |+| Diode Forward Voltage | VSD | | | 1.3 | V | TJ = 25°C, IS = 50A, VGS = 0V | 2 |+| Continuous Source Current (Body Diode) | IS | | | 99 | A | | 2 |+| Pulsed Source Current (Body Diode) | ISM | | | 396 | A | | 2 |+| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/ΔTJ | | 0.07 | | V/°C | Reference to 25°C, ID = 5mA | 2 |+| Internal Gate Resistance | RG(int) | | 0.6 | | Ω | | 2 |+| Gate-to-Source Charge | Qgs | | 11 | | nC | | 2 |+| Gate-to-Drain (Miller) Charge | Qgd | | 15 | | nC | | 2 |+| Total Gate Charge Sync. (Qg - Qgd) | Qsync | | 18 | | nC | | 2 |+| Turn-On Delay Time | td(on) | | 45 | | ns | | 2 |+| Rise Time | tr | | 216 | | ns | | 2 |+| Turn-Off Delay Time | td(off) | | 43 | | ns | | 2 |+| Fall Time | tf | | 69 | | ns | | 2 |+| Input Capacitance | Ciss | | 3779 | | pF | | 2 |+| Output Capacitance | Coss | | 332 | | pF | | 2 |+| Reverse Transfer Capacitance | Crss | | 163 | | pF | | 2 |+| Effective Output Capacitance (Energy Related) | Coss eff. (ER) | | 437 | | pF | | 2 |+| Effective Output Capacitance (Time Related) | Coss eff. (TR) | | 636 | | pF | | 2 |+| Reverse Recovery Time | trr | | 27 | | ns | TJ = 25°C, VR = 51V, IF = 50A | 2 |+| Reverse Recovery Time | trr | | 32 | | ns | TJ = 125°C, VR = 51V, IF = 50A | 2 |+| Reverse Recovery Charge | Qrr | | 31 | | nC | TJ = 25°C, di/dt = 100A/µs | 2 |+| Reverse Recovery Charge | Qrr | | 43 | | nC | TJ = 125°C, di/dt = 100A/µs | 2 |+| Reverse Recovery Current | IRRM | | 2.1 | | A | TJ = 25°C | 2 |+ ## CAD (KiCad official) - Symbol: `IRLR3636TRPBF`
page.json+584−1@@ -150,6 +150,589 @@ "Package": "TO-252", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "4f9fc18ba032309e",+ "rows": [+ {+ "name": "Continuous Drain Current, VGS @ 10V (Silicon Limited), TC = 25°C",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 99,+ "conditions": "VGS @ 10V, TC = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current, VGS @ 10V (Silicon Limited), TC = 100°C",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 70,+ "conditions": "VGS @ 10V, TC = 100°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current, VGS @ 10V (Package Limited), TC = 25°C",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "VGS @ 10V, TC = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 396,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 143,+ "conditions": "TC = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Linear Derating Factor",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "W/°C",+ "min": null,+ "typ": null,+ "max": 0.95,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -16,+ "typ": null,+ "max": 16,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Peak Diode Recovery dv/dt",+ "symbol": "dv/dt",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 22,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction Temperature Range",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature Range",+ "symbol": "TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Soldering Temperature",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "10 seconds, 1.6mm from case",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Energy (EAS)",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 170,+ "conditions": "Thermally limited",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Current",+ "symbol": "IAR",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Case",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 1.05,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient (PCB Mount)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "PCB mount",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 110,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Breakdown Voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 60,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0V, ID = 250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-to-Source On-Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 5.4,+ "max": 6.8,+ "conditions": "VGS = 10V, ID = 50A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-to-Source On-Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 6.6,+ "max": 8.3,+ "conditions": "VGS = 4.5V, ID = 50A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1,+ "typ": null,+ "max": 2.5,+ "conditions": "VDS = VGS, ID = 100µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "VDS = 60V, VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 250,+ "conditions": "VDS = 60V, VGS = 0V, TJ = 125°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Forward Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS = 16V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Reverse Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": -100,+ "conditions": "VGS = -16V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance",+ "symbol": "gfs",+ "kind": "electrical",+ "unit": "S",+ "min": 31,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 33,+ "max": 49,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.3,+ "conditions": "TJ = 25°C, IS = 50A, VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source Current (Body Diode)",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 99,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Source Current (Body Diode)",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 396,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Breakdown Voltage Temp. Coefficient",+ "symbol": "ΔV(BR)DSS/ΔTJ",+ "kind": "temperature_coefficient",+ "unit": "V/°C",+ "min": null,+ "typ": 0.07,+ "max": null,+ "conditions": "Reference to 25°C, ID = 5mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Internal Gate Resistance",+ "symbol": "RG(int)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.6,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 11,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Drain (Miller) Charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 15,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge Sync. (Qg - Qgd)",+ "symbol": "Qsync",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 18,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 45,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Rise Time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 216,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 43,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Fall Time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 69,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 3779,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 332,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 163,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Effective Output Capacitance (Energy Related)",+ "symbol": "Coss eff. (ER)",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 437,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Effective Output Capacitance (Time Related)",+ "symbol": "Coss eff. (TR)",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 636,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 27,+ "max": null,+ "conditions": "TJ = 25°C, VR = 51V, IF = 50A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 32,+ "max": null,+ "conditions": "TJ = 125°C, VR = 51V, IF = 50A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 31,+ "max": null,+ "conditions": "TJ = 25°C, di/dt = 100A/µs",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 43,+ "max": null,+ "conditions": "TJ = 125°C, di/dt = 100A/µs",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Current",+ "symbol": "IRRM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": 2.1,+ "max": null,+ "conditions": "TJ = 25°C",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -191,4 +774,4 @@ "visibility": { "public": true }-}+}