component
IRLR3410TR
Public Made by Adomby adom
UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
IRLR3410TR
UMW · MOSFETs · TO-252
IRLR3410TR from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE: gate terminal of the MOSFET; the datasheet's absolute maximum gate-to-source voltage VGS is ±16 V. |
| 2 | D | passive | DRAIN: drain terminal; rated VDS of 100 V, with continuous drain current ID of 17 A at VGS=10V, TC=25°C (12 A at TC=100°C). |
| 3 | S | passive | SOURCE: source terminal; the datasheet gives a continuous body-diode source current IS of 17 A and a pulsed ISM of 60 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | V | ID=250µA, VGS=0V | 3 | ||
| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/TJ | 0.122 | V/°C | ID=1mA, reference to 25°C | 3 | ||
| Static Drain-to-Source On-Resistance | RDS(ON) | 105 | mΩ | VGS=10V, ID=10A | 3 | ||
| Static Drain-to-Source On-Resistance | RDS(ON) | 125 | mΩ | VGS=5V, ID=10A | 3 | ||
| Static Drain-to-Source On-Resistance | RDS(ON) | 155 | mΩ | VGS=4V, ID=9A | 3 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 2 | V | VDS=VGS, ID=250µA | 3 | |
| Forward Transconductance | gFS | 7.2 | S | VDS=25V, ID=9A | 3 | ||
| Drain-to-Source Leakage Current | IDSS | 25 | µA | VDS=100V, VGS=0V | 3 | ||
| Drain-to-Source Leakage Current | IDSS | 250 | µA | VDS=80V, VGS=0V, TJ=150°C | 3 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS=16V | 3 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS=-16V | 3 | ||
| Internal Drain inductance | LD | 4.5 | nH | Between lead, 6mm (0.25in.) from package and center of die contact | 3 | ||
| Internal Source inductance | LS | 7.5 | nH | Between lead, 6mm (0.25in.) from package and center of die contact | 3 | ||
| Input Capacitance | Ciss | 800 | pF | VGS=0V, VDS=25V, ƒ=1.0MHz | 3 | ||
| Output Capacitance | Coss | 160 | pF | VGS=0V, VDS=25V, ƒ=1.0MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 90 | pF | VGS=0V, VDS=25V, ƒ=1.0MHz | 3 | ||
| Continuous Drain Current | ID | 17 | A | VGS=10V, TC=25°C | 1 | ||
| Continuous Drain Current | ID | 12 | A | VGS=10V, TC=100°C | 1 | ||
| Pulsed Drain Current | IDM | 60 | A | 1 | |||
| Power Dissipation | PD | 79 | W | TC=25°C | 1 | ||
| Linear Derating Factor | 0.53 | W/°C | 1 | ||||
| Gate-to-Source Voltage | VGS | -16 | 16 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 150 | mJ | 1 | |||
| Avalanche Current | IAR | 9 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 7.9 | mJ | 1 | |||
| Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Soldering Temperature | 300 | °C | for 10 seconds (1.6mm from case) | 1 | |||
| Junction-to-Case Thermal Resistance | RθJC | 1.9 | °C/W | 2 | |||
| Junction-to-Ambient Thermal Resistance (PCB Mount) | RθJA | 50 | °C/W | PCB mount | 2 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 110 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
IRLR3410TR - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
irlr3410tr-etched.step/irlr3410tr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irlr3410tr.step/irlr3410tr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (11 pp, sha256
ca31db8f90893500, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRLR3410TR
**UMW** · MOSFETs · TO-252
IRLR3410TR from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE: gate terminal of the MOSFET; the datasheet's absolute maximum gate-to-source voltage VGS is ±16 V. |
| 2 | D | passive | DRAIN: drain terminal; rated VDS of 100 V, with continuous drain current ID of 17 A at VGS=10V, TC=25°C (12 A at TC=100°C). |
| 3 | S | passive | SOURCE: source terminal; the datasheet gives a continuous body-diode source current IS of 17 A and a pulsed ISM of 60 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | | | V | ID=250µA, VGS=0V | 3 |
| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/TJ | | 0.122 | | V/°C | ID=1mA, reference to 25°C | 3 |
| Static Drain-to-Source On-Resistance | RDS(ON) | | | 105 | mΩ | VGS=10V, ID=10A | 3 |
| Static Drain-to-Source On-Resistance | RDS(ON) | | | 125 | mΩ | VGS=5V, ID=10A | 3 |
| Static Drain-to-Source On-Resistance | RDS(ON) | | | 155 | mΩ | VGS=4V, ID=9A | 3 |
| Gate Threshold Voltage | VGS(th) | 1 | | 2 | V | VDS=VGS, ID=250µA | 3 |
| Forward Transconductance | gFS | 7.2 | | | S | VDS=25V, ID=9A | 3 |
| Drain-to-Source Leakage Current | IDSS | | | 25 | µA | VDS=100V, VGS=0V | 3 |
| Drain-to-Source Leakage Current | IDSS | | | 250 | µA | VDS=80V, VGS=0V, TJ=150°C | 3 |
| Gate-to-Source Forward Leakage | IGSS | | | 100 | nA | VGS=16V | 3 |
| Gate-to-Source Reverse Leakage | IGSS | | | -100 | nA | VGS=-16V | 3 |
| Internal Drain inductance | LD | | 4.5 | | nH | Between lead, 6mm (0.25in.) from package and center of die contact | 3 |
| Internal Source inductance | LS | | 7.5 | | nH | Between lead, 6mm (0.25in.) from package and center of die contact | 3 |
| Input Capacitance | Ciss | | 800 | | pF | VGS=0V, VDS=25V, ƒ=1.0MHz | 3 |
| Output Capacitance | Coss | | 160 | | pF | VGS=0V, VDS=25V, ƒ=1.0MHz | 3 |
| Reverse Transfer Capacitance | Crss | | 90 | | pF | VGS=0V, VDS=25V, ƒ=1.0MHz | 3 |
| Continuous Drain Current | ID | | | 17 | A | VGS=10V, TC=25°C | 1 |
| Continuous Drain Current | ID | | | 12 | A | VGS=10V, TC=100°C | 1 |
| Pulsed Drain Current | IDM | | | 60 | A | | 1 |
| Power Dissipation | PD | | | 79 | W | TC=25°C | 1 |
| Linear Derating Factor | | | | 0.53 | W/°C | | 1 |
| Gate-to-Source Voltage | VGS | -16 | | 16 | V | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 150 | mJ | | 1 |
| Avalanche Current | IAR | | | 9 | A | | 1 |
| Repetitive Avalanche Energy | EAR | | | 7.9 | mJ | | 1 |
| Peak Diode Recovery dv/dt | dv/dt | | | 5 | V/ns | | 1 |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | | 175 | °C | | 1 |
| Soldering Temperature | | | | 300 | °C | for 10 seconds (1.6mm from case) | 1 |
| Junction-to-Case Thermal Resistance | RθJC | | | 1.9 | °C/W | | 2 |
| Junction-to-Ambient Thermal Resistance (PCB Mount) | RθJA | | | 50 | °C/W | PCB mount | 2 |
| Junction-to-Ambient Thermal Resistance | RθJA | | | 110 | °C/W | | 2 |
## CAD (KiCad official)
- Symbol: `IRLR3410TR`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `irlr3410tr-etched.step` / `irlr3410tr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irlr3410tr.step` / `irlr3410tr.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755878890135277568) (11 pp, sha256 `ca31db8f90893500`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irlr3410tr-datasheet.pdf)