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IRLR3410TR

Public Made by Adom

by adom

UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRLR3410TR

UMW · MOSFETs · TO-252

IRLR3410TR from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE: gate terminal of the MOSFET; the datasheet's absolute maximum gate-to-source voltage VGS is ±16 V.
2 D passive DRAIN: drain terminal; rated VDS of 100 V, with continuous drain current ID of 17 A at VGS=10V, TC=25°C (12 A at TC=100°C).
3 S passive SOURCE: source terminal; the datasheet gives a continuous body-diode source current IS of 17 A and a pulsed ISM of 60 A.

Key specifications

Parameter Value
Manufacturer UMW
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 100 V ID=250µA, VGS=0V 3
Breakdown Voltage Temp. Coefficient ΔV(BR)DSS/TJ 0.122 V/°C ID=1mA, reference to 25°C 3
Static Drain-to-Source On-Resistance RDS(ON) 105 mΩ VGS=10V, ID=10A 3
Static Drain-to-Source On-Resistance RDS(ON) 125 mΩ VGS=5V, ID=10A 3
Static Drain-to-Source On-Resistance RDS(ON) 155 mΩ VGS=4V, ID=9A 3
Gate Threshold Voltage VGS(th) 1 2 V VDS=VGS, ID=250µA 3
Forward Transconductance gFS 7.2 S VDS=25V, ID=9A 3
Drain-to-Source Leakage Current IDSS 25 µA VDS=100V, VGS=0V 3
Drain-to-Source Leakage Current IDSS 250 µA VDS=80V, VGS=0V, TJ=150°C 3
Gate-to-Source Forward Leakage IGSS 100 nA VGS=16V 3
Gate-to-Source Reverse Leakage IGSS -100 nA VGS=-16V 3
Internal Drain inductance LD 4.5 nH Between lead, 6mm (0.25in.) from package and center of die contact 3
Internal Source inductance LS 7.5 nH Between lead, 6mm (0.25in.) from package and center of die contact 3
Input Capacitance Ciss 800 pF VGS=0V, VDS=25V, ƒ=1.0MHz 3
Output Capacitance Coss 160 pF VGS=0V, VDS=25V, ƒ=1.0MHz 3
Reverse Transfer Capacitance Crss 90 pF VGS=0V, VDS=25V, ƒ=1.0MHz 3
Continuous Drain Current ID 17 A VGS=10V, TC=25°C 1
Continuous Drain Current ID 12 A VGS=10V, TC=100°C 1
Pulsed Drain Current IDM 60 A 1
Power Dissipation PD 79 W TC=25°C 1
Linear Derating Factor 0.53 W/°C 1
Gate-to-Source Voltage VGS -16 16 V 1
Single Pulse Avalanche Energy EAS 150 mJ 1
Avalanche Current IAR 9 A 1
Repetitive Avalanche Energy EAR 7.9 mJ 1
Peak Diode Recovery dv/dt dv/dt 5 V/ns 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 175 °C 1
Soldering Temperature 300 °C for 10 seconds (1.6mm from case) 1
Junction-to-Case Thermal Resistance RθJC 1.9 °C/W 2
Junction-to-Ambient Thermal Resistance (PCB Mount) RθJA 50 °C/W PCB mount 2
Junction-to-Ambient Thermal Resistance RθJA 110 °C/W 2

CAD (KiCad official)

  • Symbol: IRLR3410TR
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: irlr3410tr-etched.step / irlr3410tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irlr3410tr.step / irlr3410tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (11 pp, sha256 ca31db8f90893500, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF