# IRLR3103PBF-HXY

**HXY MOSFET** · MOSFETs · TO-252-2L

IRLR3103PBF-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET, with the gate-source voltage rated at ±20 V (absolute maximum) and VGS(th) of 1.0 to 2.5 V. |
| 2 | D | passive | Drain terminal of the N-channel MOSFET, rated for 30 V drain-source voltage and 20 A continuous drain current at TC=25℃ with VGS at 10 V. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, the reference for the datasheet's VDS (30 V) and VGS ratings, with continuous source current IS rated at 24 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 30 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID@TC=25℃ |  |  | 20 | A | TC=25℃, VGS @ 10V | 1 |
| Continuous Drain Current | ID@TC=100℃ |  |  | 15 | A | TC=100℃, VGS @ 10V | 1 |
| Pulsed Drain Current | IDM |  |  | 50 | A |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 8.1 | mJ |  | 1 |
| Avalanche Current | IAS |  |  | 12.7 | A |  | 1 |
| Total Power Dissipation | PD@TC=25℃ |  |  | 20.8 | W | TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-ambient | RθJA |  |  | 62 | ℃/W |  | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 6 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | VGS=0V , ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 18 | 25 | mΩ | VGS=10V , ID=10A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 25 | 38 | mΩ | VGS=4.5V , ID=8A | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.2 | 2.5 | V | VGS=VDS , ID =250uA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=24V , VGS=0V , TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 5 | uA | VDS=24V , VGS=0V , TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V , VDS=0V | 2 |
| Continuous Source Current | IS |  |  | 24 | A | VG=VD=0V , Force Current | 2 |
| Pulsed Source Current | ISM |  |  | 50 | A |  | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V , IS=1A , TJ=25℃ | 2 |

## CAD (KiCad official)

- Symbol: `IRLR3103PBF-HXY`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files: `irlr3103pbf-hxy-etched.step` / `irlr3103pbf-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irlr3103pbf-hxy.step` / `irlr3103pbf-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/irlr3103pbf-hxy-datasheet.pdf) (6 pp, sha256 `266817706c9f03a2`, retrieved 2026-11-05, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irlr3103pbf-hxy-datasheet.pdf)