component
IRLR3103PBF-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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IRLR3103PBF-HXY
HXY MOSFET · MOSFETs · TO-252-2L
IRLR3103PBF-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET, with the gate-source voltage rated at ±20 V (absolute maximum) and VGS(th) of 1.0 to 2.5 V. |
| 2 | D | passive | Drain terminal of the N-channel MOSFET, rated for 30 V drain-source voltage and 20 A continuous drain current at TC=25℃ with VGS at 10 V. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, the reference for the datasheet's VDS (30 V) and VGS ratings, with continuous source current IS rated at 24 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 20 | A | TC=25℃, VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 15 | A | TC=100℃, VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 50 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 8.1 | mJ | 1 | |||
| Avalanche Current | IAS | 12.7 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 20.8 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 62 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 6 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V , ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 18 | 25 | mΩ | VGS=10V , ID=10A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 25 | 38 | mΩ | VGS=4.5V , ID=8A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.2 | 2.5 | V | VGS=VDS , ID =250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=24V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=24V , VGS=0V , TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Continuous Source Current | IS | 24 | A | VG=VD=0V , Force Current | 2 | ||
| Pulsed Source Current | ISM | 50 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V , IS=1A , TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
IRLR3103PBF-HXY - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
irlr3103pbf-hxy-etched.step/irlr3103pbf-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irlr3103pbf-hxy.step/irlr3103pbf-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
266817706c9f03a2, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).