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IRLML9301TRPBF-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRLML9301TRPBF-HXY

HXY MOSFET · MOSFETs · SOT-23

IRLML9301TRPBF-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drives the P-channel MOSFET, with a Gate-Source Voltage limit of ±20 V and operation at gate voltages as low as 2.5 V.
2 S passive Source of the P-channel MOSFET; the body diode runs from drain to source, with a continuous source current of -3.2 A.
3 D passive Drain of the P-channel MOSFET, rated for a Drain-Source Voltage of -30 V and a continuous drain current of -4.1 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID -4.1 A 1
Drain Current-Pulsed IDM -13 A 1
Maximum Power Dissipation PD 1.32 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 125 ℃/W 1
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 48 56 mΩ VGS=-10V, ID=-3A 2
Static Drain-Source On-Resistance RDS(ON) 78 90 mΩ VGS=-4.5V, ID=-1.5A 2
Gate Threshold Voltage VGS(th) -1.2 -1.5 -2.5 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS -5 uA VDS=-24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Resistance Rg 24 48 VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge (-4.5V) Qg 5.22 7.3 nC VDS=-20V, VGS=-4.5V, ID=-3A 2
Gate-Source Charge Qgs 1.25 1.8 nC VDS=-20V, VGS=-4.5V, ID=-3A 2
Gate-Drain Charge Qgd 2.3 3.2 nC VDS=-20V, VGS=-4.5V, ID=-3A 2
Turn-On Delay Time Td(on) 18.4 37 ns VDD=-15V, VGS=-10V, RG=3.3, ID=-1A 2
Rise Time Tr 11.4 21 ns VDD=-15V, VGS=-10V, RG=3.3, ID=-1A 2
Turn-Off Delay Time Td(off) 39.4 79 ns VDD=-15V, VGS=-10V, RG=3.3, ID=-1A 2
Fall Time Tf 5.2 10.4 ns VDD=-15V, VGS=-10V, RG=3.3, ID=-1A 2
Input Capacitance Ciss 463 650 pF VDS=-15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 82 115 pF VDS=-15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 68 95 pF VDS=-15V, VGS=0V, f=1MHz 2
Continuous Source Current IS -3.2 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM -13 A 2
Diode Forward Voltage VSD -1 V VGS=0V, IS=-1A, TJ=25℃ 2
BVDSS Temperature Coefficient △BVDSS/△TJ -0.02 V/℃ Reference to 25℃, ID=-1mA 2
VGS(th) Temperature Coefficient △VGS(th) 4.32 mV/℃ 2
Forward Transconductance gfs 4.8 S VDS=-5V, ID=-3A 2

CAD (KiCad official)

  • Symbol: IRLML9301TRPBF-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: irlml9301trpbf-hxy-etched.step / irlml9301trpbf-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irlml9301trpbf-hxy.step / irlml9301trpbf-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 841b3e88cfb8ebf1, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF