component
IRLML9301TRPBF-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownIRLML9301TRPBF-HXY
HXY MOSFET · MOSFETs · SOT-23
IRLML9301TRPBF-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drives the P-channel MOSFET, with a Gate-Source Voltage limit of ±20 V and operation at gate voltages as low as 2.5 V. |
| 2 | S | passive | Source of the P-channel MOSFET; the body diode runs from drain to source, with a continuous source current of -3.2 A. |
| 3 | D | passive | Drain of the P-channel MOSFET, rated for a Drain-Source Voltage of -30 V and a continuous drain current of -4.1 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | -4.1 | A | 1 | |||
| Drain Current-Pulsed | IDM | -13 | A | 1 | |||
| Maximum Power Dissipation | PD | 1.32 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 125 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 48 | 56 | mΩ | VGS=-10V, ID=-3A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 78 | 90 | mΩ | VGS=-4.5V, ID=-1.5A | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.2 | -1.5 | -2.5 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-24V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | -5 | uA | VDS=-24V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Resistance | Rg | 24 | 48 | VDS=0V, VGS=0V, f=1MHz | 2 | ||
| Total Gate Charge (-4.5V) | Qg | 5.22 | 7.3 | nC | VDS=-20V, VGS=-4.5V, ID=-3A | 2 | |
| Gate-Source Charge | Qgs | 1.25 | 1.8 | nC | VDS=-20V, VGS=-4.5V, ID=-3A | 2 | |
| Gate-Drain Charge | Qgd | 2.3 | 3.2 | nC | VDS=-20V, VGS=-4.5V, ID=-3A | 2 | |
| Turn-On Delay Time | Td(on) | 18.4 | 37 | ns | VDD=-15V, VGS=-10V, RG=3.3, ID=-1A | 2 | |
| Rise Time | Tr | 11.4 | 21 | ns | VDD=-15V, VGS=-10V, RG=3.3, ID=-1A | 2 | |
| Turn-Off Delay Time | Td(off) | 39.4 | 79 | ns | VDD=-15V, VGS=-10V, RG=3.3, ID=-1A | 2 | |
| Fall Time | Tf | 5.2 | 10.4 | ns | VDD=-15V, VGS=-10V, RG=3.3, ID=-1A | 2 | |
| Input Capacitance | Ciss | 463 | 650 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | |
| Output Capacitance | Coss | 82 | 115 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 68 | 95 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | |
| Continuous Source Current | IS | -3.2 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | -13 | A | 2 | |||
| Diode Forward Voltage | VSD | -1 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 | ||
| BVDSS Temperature Coefficient | △BVDSS/△TJ | -0.02 | V/℃ | Reference to 25℃, ID=-1mA | 2 | ||
| VGS(th) Temperature Coefficient | △VGS(th) | 4.32 | mV/℃ | 2 | |||
| Forward Transconductance | gfs | 4.8 | S | VDS=-5V, ID=-3A | 2 |
CAD (KiCad official)
- Symbol:
IRLML9301TRPBF-HXY - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
irlml9301trpbf-hxy-etched.step/irlml9301trpbf-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irlml9301trpbf-hxy.step/irlml9301trpbf-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
841b3e88cfb8ebf1, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).