component
IRLML5103
Public Made by Adomby adom
Guangdong Hottech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRLML5103
Guangdong Hottech · MOSFETs · SOT-23
IRLML5103 from Guangdong Hottech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage max ±20 V, gate threshold VGS(th) min -1.0 V at ID = -250µA. |
| 2 | S | passive | Source; continuous body-diode source current max -0.54 A, pulsed -4.8 A. |
| 3 | D | passive | Drain; drain-to-source breakdown -30 V min, continuous drain current -0.76 A at TA = 25°C, pulsed -4.8 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Guangdong Hottech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous Drain Current (VGS @ -10V) | ID | -0.76 | A | TA = 25°C | 1 | ||
| Continuous Drain Current (VGS @ -10V) | ID | -0.61 | A | TA = 70°C | 1 | ||
| Pulsed Drain Current | IDM | -4.8 | A | 1 | |||
| Power Dissipation | PD | 540 | mW | TA = 25°C | 1 | ||
| Linear Derating Factor | 4.3 | mW/˚C | 1 | ||||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | ± 20 V as printed | 1 | |
| Peak Diode Recovery dv/dt | dv/dt | -5 | V/ns | 1 | |||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient Thermal Resistance | RθJA | 230 | °C/W | 1 | |||
| Drain-to-Source Breakdown Voltage | V(BR)DSS | -30 | V | VGS = 0V, ID = -250µA | 1 | ||
| Static Drain-to-Source On-Resistance | RDS(ON) | 0.6 | Ω | VGS = -10V, ID = -0.60A | 1 | ||
| Static Drain-to-Source On-Resistance | RDS(ON) | 1 | Ω | VGS = -4.5V, ID = -0.30A | 1 | ||
| Gate Threshold Voltage | VGS(th) | -1 | V | VDS = VGS, ID = -250µA | 1 | ||
| Forward Transconductance | gfs | 0.44 | S | VDS = -10V, ID = -0.30A | 1 | ||
| Drain-to-Source Leakage Current | IDSS | -1 | µA | VDS = -24V, VGS = 0V | 1 | ||
| Drain-to-Source Leakage Current | IDSS | -25 | µA | VDS = -24V, VGS = 0V, TJ = 125°C | 1 | ||
| Gate-to-Source Forward Leakage | IGSS | -100 | nA | VGS = -20V | 1 | ||
| Gate-to-Source Reverse Leakage | IGSS | 100 | nA | VGS = 20V | 1 | ||
| Total Gate Charge | Qg | 5.1 | nC | ID = -0.60A, VDS = -24V, VGS = -10V, See Fig. 6 and 9 | 1 | ||
| Gate-to-Source Charge | Qgs | 0.78 | nC | ID = -0.60A, VDS = -24V, VGS = -10V, See Fig. 6 and 9 | 1 | ||
| Gate-to-Drain (Miller) Charge | Qgd | 1.7 | nC | ID = -0.60A, VDS = -24V, VGS = -10V, See Fig. 6 and 9 | 1 | ||
| Continuous Source Current (Body Diode) | IS | -0.54 | A | 1 | |||
| Pulsed Source Current (Body Diode) | ISM | -4.8 | A | 1 | |||
| Diode Forward Voltage | VSD | -1.2 | V | TJ = 25°C, IS = -0.60A, VGS = 0V | 1 | ||
| Reverse Recovery Time | trr | 26 | 39 | ns | TJ = 25°C, IF = -0.60A | 1 | |
| Reverse Recovery Charge | Qrr | 20 | 30 | nC | di/dt = 100A/µs | 1 |
CAD (KiCad official)
- Symbol:
IRLML5103 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
irlml5103-etched.step/irlml5103-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irlml5103.step/irlml5103.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Guangdong Hottech datasheet (6 pp, sha256
81322d2f152eec53, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRLML5103
**Guangdong Hottech** · MOSFETs · SOT-23
IRLML5103 from Guangdong Hottech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage max ±20 V, gate threshold VGS(th) min -1.0 V at ID = -250µA. |
| 2 | S | passive | Source; continuous body-diode source current max -0.54 A, pulsed -4.8 A. |
| 3 | D | passive | Drain; drain-to-source breakdown -30 V min, continuous drain current -0.76 A at TA = 25°C, pulsed -4.8 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Guangdong Hottech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous Drain Current (VGS @ -10V) | ID | | | -0.76 | A | TA = 25°C | 1 |
| Continuous Drain Current (VGS @ -10V) | ID | | | -0.61 | A | TA = 70°C | 1 |
| Pulsed Drain Current | IDM | | | -4.8 | A | | 1 |
| Power Dissipation | PD | | | 540 | mW | TA = 25°C | 1 |
| Linear Derating Factor | | | 4.3 | | mW/˚C | | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | ± 20 V as printed | 1 |
| Peak Diode Recovery dv/dt | dv/dt | | | -5 | V/ns | | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |
| Maximum Junction-to-Ambient Thermal Resistance | RθJA | | | 230 | °C/W | | 1 |
| Drain-to-Source Breakdown Voltage | V(BR)DSS | -30 | | | V | VGS = 0V, ID = -250µA | 1 |
| Static Drain-to-Source On-Resistance | RDS(ON) | | | 0.6 | Ω | VGS = -10V, ID = -0.60A | 1 |
| Static Drain-to-Source On-Resistance | RDS(ON) | | | 1 | Ω | VGS = -4.5V, ID = -0.30A | 1 |
| Gate Threshold Voltage | VGS(th) | -1 | | | V | VDS = VGS, ID = -250µA | 1 |
| Forward Transconductance | gfs | 0.44 | | | S | VDS = -10V, ID = -0.30A | 1 |
| Drain-to-Source Leakage Current | IDSS | | | -1 | µA | VDS = -24V, VGS = 0V | 1 |
| Drain-to-Source Leakage Current | IDSS | | | -25 | µA | VDS = -24V, VGS = 0V, TJ = 125°C | 1 |
| Gate-to-Source Forward Leakage | IGSS | | | -100 | nA | VGS = -20V | 1 |
| Gate-to-Source Reverse Leakage | IGSS | | | 100 | nA | VGS = 20V | 1 |
| Total Gate Charge | Qg | | | 5.1 | nC | ID = -0.60A, VDS = -24V, VGS = -10V, See Fig. 6 and 9 | 1 |
| Gate-to-Source Charge | Qgs | | | 0.78 | nC | ID = -0.60A, VDS = -24V, VGS = -10V, See Fig. 6 and 9 | 1 |
| Gate-to-Drain (Miller) Charge | Qgd | | | 1.7 | nC | ID = -0.60A, VDS = -24V, VGS = -10V, See Fig. 6 and 9 | 1 |
| Continuous Source Current (Body Diode) | IS | | | -0.54 | A | | 1 |
| Pulsed Source Current (Body Diode) | ISM | | | -4.8 | A | | 1 |
| Diode Forward Voltage | VSD | | | -1.2 | V | TJ = 25°C, IS = -0.60A, VGS = 0V | 1 |
| Reverse Recovery Time | trr | | 26 | 39 | ns | TJ = 25°C, IF = -0.60A | 1 |
| Reverse Recovery Charge | Qrr | | 20 | 30 | nC | di/dt = 100A/µs | 1 |
## CAD (KiCad official)
- Symbol: `IRLML5103`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `irlml5103-etched.step` / `irlml5103-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irlml5103.step` / `irlml5103.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Guangdong Hottech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603120179282915328) (6 pp, sha256 `81322d2f152eec53`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irlml5103-datasheet.pdf)