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IRLML5103

Public Made by Adom

by adom

Guangdong Hottech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRLML5103

Guangdong Hottech · MOSFETs · SOT-23

IRLML5103 from Guangdong Hottech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-to-source voltage max ±20 V, gate threshold VGS(th) min -1.0 V at ID = -250µA.
2 S passive Source; continuous body-diode source current max -0.54 A, pulsed -4.8 A.
3 D passive Drain; drain-to-source breakdown -30 V min, continuous drain current -0.76 A at TA = 25°C, pulsed -4.8 A.

Key specifications

Parameter Value
Manufacturer Guangdong Hottech
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous Drain Current (VGS @ -10V) ID -0.76 A TA = 25°C 1
Continuous Drain Current (VGS @ -10V) ID -0.61 A TA = 70°C 1
Pulsed Drain Current IDM -4.8 A 1
Power Dissipation PD 540 mW TA = 25°C 1
Linear Derating Factor 4.3 mW/˚C 1
Gate-to-Source Voltage VGS -20 20 V ± 20 V as printed 1
Peak Diode Recovery dv/dt dv/dt -5 V/ns 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Maximum Junction-to-Ambient Thermal Resistance RθJA 230 °C/W 1
Drain-to-Source Breakdown Voltage V(BR)DSS -30 V VGS = 0V, ID = -250µA 1
Static Drain-to-Source On-Resistance RDS(ON) 0.6 Ω VGS = -10V, ID = -0.60A 1
Static Drain-to-Source On-Resistance RDS(ON) 1 Ω VGS = -4.5V, ID = -0.30A 1
Gate Threshold Voltage VGS(th) -1 V VDS = VGS, ID = -250µA 1
Forward Transconductance gfs 0.44 S VDS = -10V, ID = -0.30A 1
Drain-to-Source Leakage Current IDSS -1 µA VDS = -24V, VGS = 0V 1
Drain-to-Source Leakage Current IDSS -25 µA VDS = -24V, VGS = 0V, TJ = 125°C 1
Gate-to-Source Forward Leakage IGSS -100 nA VGS = -20V 1
Gate-to-Source Reverse Leakage IGSS 100 nA VGS = 20V 1
Total Gate Charge Qg 5.1 nC ID = -0.60A, VDS = -24V, VGS = -10V, See Fig. 6 and 9 1
Gate-to-Source Charge Qgs 0.78 nC ID = -0.60A, VDS = -24V, VGS = -10V, See Fig. 6 and 9 1
Gate-to-Drain (Miller) Charge Qgd 1.7 nC ID = -0.60A, VDS = -24V, VGS = -10V, See Fig. 6 and 9 1
Continuous Source Current (Body Diode) IS -0.54 A 1
Pulsed Source Current (Body Diode) ISM -4.8 A 1
Diode Forward Voltage VSD -1.2 V TJ = 25°C, IS = -0.60A, VGS = 0V 1
Reverse Recovery Time trr 26 39 ns TJ = 25°C, IF = -0.60A 1
Reverse Recovery Charge Qrr 20 30 nC di/dt = 100A/µs 1

CAD (KiCad official)

  • Symbol: IRLML5103
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: irlml5103-etched.step / irlml5103-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irlml5103.step / irlml5103.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Guangdong Hottech datasheet (6 pp, sha256 81322d2f152eec53, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF