# IRLML2803TR

**UMW** · MOSFETs · SOT-23

IRLML2803TR from UMW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the 30V N-channel MOSFET; the gate-to-source voltage is rated ±20 V (VGS). |
| 2 | S | passive | SOURCE terminal of the N-channel MOSFET; the source-drain body diode is rated 0.54 A continuous (IS) and 7.3 A pulsed (ISM). |
| 3 | D | passive | DRAIN terminal of the N-channel MOSFET; rated VDS 30 V with continuous drain current of 1.2 A at TA=25°C (VGS @ 10V). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 |  |  | V | ID=250µA, VGS=0V | 2 |
| Static Drain-to-Source On-Resistance | RDS(ON) |  |  | 150 | mΩ | VGS=10V, ID=0.91A | 2 |
| Static Drain-to-Source On-Resistance | RDS(ON) |  |  | 200 | mΩ | VGS=4.5V, ID=0.46A | 2 |
| Drain-to-Source Leakage Current | IDSS |  |  | 1 | µA | VDS=24V, VGS=0V | 2 |
| Drain-to-Source Leakage Current | IDSS |  |  | 25 | µA | VDS=24V, VGS=0V, TJ=125°C | 2 |
| Gate-to-Source Reverse Leakage | IGSS | -100 |  |  | nA | VGS=-20V | 2 |
| Gate-to-Source Forward Leakage | IGSS |  |  | 100 | nA | VGS=20V | 2 |
| Continuous Drain Current, VGS @ 10V | ID |  |  | 1.2 | A | TA=25°C | 1 |
| Continuous Drain Current, VGS @ 10V | ID |  |  | 0.93 | A | TA=70°C | 1 |
| Pulsed Drain Current | IDM |  |  | 7.3 | A |  | 1 |
| Power Dissipation | PD |  |  | 540 | mW | TA=25°C | 1 |
| Linear Derating Factor |  |  |  | 4.3 | mW/°C |  | 1 |
| Gate-to-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 3.9 | mJ | Limited by TJmax, starting TJ=25°C, L=9.4mH, RG=25Ω, IAS=0.9A | 1 |
| Peak diode Recovery dv/dt | dv/dt |  |  | 5 | V/ns | ISD≤0.91A, di/dt≤120A/µs, VDD≤V(BR)DSS, TJ≤150°C | 1 |
| Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | °C |  | 1 |
| Maximum Junction-to-Ambient | RθJA |  |  | 230 | °C/W | Surface mounted on FR-4 board, t≤5sec | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | TJ=25°C, IS=0.91A, VGS=0V | 3 |
| Reverse Recovery Time | trr |  |  | 40 | ns | TJ=25°C, IF=0.91A, dI/dt=100A/µs | 3 |
| Reverse Recovery Charge | Qrr |  |  | 32 | nC | TJ=25°C, IF=0.91A, dI/dt=100A/µs | 3 |
| Continuous Source Current (Body Diode) | IS |  |  | 0.54 | A |  | 3 |
| Pulsed Source Current (Body Diode) | ISM |  |  | 7.3 | A |  | 3 |

## CAD (KiCad official)

- Symbol: `IRLML2803TR`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `irlml2803tr-etched.step` / `irlml2803tr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irlml2803tr.step` / `irlml2803tr.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755879092728008704) (11 pp, sha256 `84779be91142d6f9`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irlml2803tr-datasheet.pdf)