component

IRLML2803TR

Public Made by Adom

by adom

UMW MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRLML2803TR

UMW · MOSFETs · SOT-23

IRLML2803TR from UMW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE terminal of the 30V N-channel MOSFET; the gate-to-source voltage is rated ±20 V (VGS).
2 S passive SOURCE terminal of the N-channel MOSFET; the source-drain body diode is rated 0.54 A continuous (IS) and 7.3 A pulsed (ISM).
3 D passive DRAIN terminal of the N-channel MOSFET; rated VDS 30 V with continuous drain current of 1.2 A at TA=25°C (VGS @ 10V).

Key specifications

Parameter Value
Manufacturer UMW
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 30 V ID=250µA, VGS=0V 2
Static Drain-to-Source On-Resistance RDS(ON) 150 mΩ VGS=10V, ID=0.91A 2
Static Drain-to-Source On-Resistance RDS(ON) 200 mΩ VGS=4.5V, ID=0.46A 2
Drain-to-Source Leakage Current IDSS 1 µA VDS=24V, VGS=0V 2
Drain-to-Source Leakage Current IDSS 25 µA VDS=24V, VGS=0V, TJ=125°C 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS=-20V 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS=20V 2
Continuous Drain Current, VGS @ 10V ID 1.2 A TA=25°C 1
Continuous Drain Current, VGS @ 10V ID 0.93 A TA=70°C 1
Pulsed Drain Current IDM 7.3 A 1
Power Dissipation PD 540 mW TA=25°C 1
Linear Derating Factor 4.3 mW/°C 1
Gate-to-Source Voltage VGS -20 20 V 1
Single Pulse Avalanche Energy EAS 3.9 mJ Limited by TJmax, starting TJ=25°C, L=9.4mH, RG=25Ω, IAS=0.9A 1
Peak diode Recovery dv/dt dv/dt 5 V/ns ISD≤0.91A, di/dt≤120A/µs, VDD≤V(BR)DSS, TJ≤150°C 1
Junction and Storage Temperature Range TJ,TSTG -55 150 °C 1
Maximum Junction-to-Ambient RθJA 230 °C/W Surface mounted on FR-4 board, t≤5sec 2
Diode Forward Voltage VSD 1.2 V TJ=25°C, IS=0.91A, VGS=0V 3
Reverse Recovery Time trr 40 ns TJ=25°C, IF=0.91A, dI/dt=100A/µs 3
Reverse Recovery Charge Qrr 32 nC TJ=25°C, IF=0.91A, dI/dt=100A/µs 3
Continuous Source Current (Body Diode) IS 0.54 A 3
Pulsed Source Current (Body Diode) ISM 7.3 A 3

CAD (KiCad official)

  • Symbol: IRLML2803TR
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: irlml2803tr-etched.step / irlml2803tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irlml2803tr.step / irlml2803tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (11 pp, sha256 84779be91142d6f9, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF