component
IRLML0060TRPBF
Public Made by Adomby adom
Infineon Technologies MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
Ray
irlml0060trpbf: specified limits as data (metadata.characteristics, 37 rows from the datasheet)
c8b9048
17d ago
IRLML0060TRPBF
Infineon Technologies · MOSFETs · SOT-23
IRLML0060TRPBF from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; VGS max ±16 V, gate threshold voltage 1.0 V min to 2.5 V max at VDS = VGS, ID = 25μA. |
| 2 | S | passive | Source; the continuous source (body diode) current is 1.6 A and the pulsed source current is 11 A. |
| 3 | D | passive | Drain; VDS is 60 V max and continuous drain current is 2.7 A at TA = 25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Continuous Drain Current, TA = 25°C | ID @ TA = 25°C | 2.7 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current, TA = 70°C | ID @ TA = 70°C | 2.1 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 11 | A | 1 | |||
| Maximum Power Dissipation, TA = 25°C | PD @TA = 25°C | 1.25 | W | 1 | |||
| Maximum Power Dissipation, TA = 70°C | PD @TA = 70°C | 0.8 | W | 1 | |||
| Linear Derating Factor | 0.01 | W/°C | 1 | ||||
| Gate-to-Source Voltage | VGS | -16 | 16 | V | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient | RJA | 100 | °C/W | 1 | |||
| Junction-to-Ambient (t<10s) | RJA | 99 | °C/W | t<10s | 1 | ||
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 60 | V | VGS = 0V, ID = 250μA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 98 | 116 | mΩ | VGS = 4.5V, ID = 2.2A | 2 | |
| Static Drain-to-Source On-Resistance | RDS(on) | 78 | 92 | mΩ | VGS = 10V, ID = 2.7A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 2.5 | V | VDS = VGS, ID = 25μA | 2 | |
| Drain-to-Source Leakage Current | IDSS | 20 | μA | VDS = 60V, VGS = 0V | 2 | ||
| Drain-to-Source Leakage Current, TJ = 125°C | IDSS | 250 | μA | VDS = 60V, VGS = 0V, TJ = 125°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS = 20V | 2 | ||
| Gate-to-Source Reverse Leakage | -100 | nA | VGS = -20V | 2 | |||
| Forward Transconductance | gfs | 7.6 | S | VDS = 25V, ID = 2.7A | 2 | ||
| Reverse Recovery Time | trr | 14 | 21 | ns | TJ = 25°C, VR = 30V, IF=1.6A | 2 | |
| Reverse Recovery Charge | Qrr | 13 | 20 | nC | TJ = 25°C, VR = 30V, IF=1.6A | 2 | |
| Diode Forward Voltage | VSD | 1.3 | V | TJ = 25°C, IS = 2.7A, VGS = 0V | 2 | ||
| Continuous Source Current (Body Diode) | IS | 1.6 | A | 2 | |||
| Pulsed Source Current (Body Diode) | ISM | 11 | A | 2 | |||
| Breakdown Voltage Temp. Coefficient | V(BR)DSS/TJ | 0.06 | V/°C | Reference to 25°C, ID = 1mA | 2 | ||
| Internal Gate Resistance | RG | 1.6 | 2 | ||||
| Total Gate Charge | Qg | 2.5 | nC | 2 | |||
| Gate-to-Source Charge | Qgs | 0.7 | nC | 2 | |||
| Gate-to-Drain (Miller) Charge | Qgd | 1.3 | nC | 2 | |||
| Turn-On Delay Time | td(on) | 5.4 | ns | 2 | |||
| Rise Time | tr | 6.3 | ns | 2 | |||
| Turn-Off Delay Time | td(off) | 6.8 | ns | 2 | |||
| Fall Time | tf | 4.2 | ns | 2 | |||
| Input Capacitance | Ciss | 290 | pF | 2 | |||
| Output Capacitance | Coss | 37 | pF | 2 | |||
| Reverse Transfer Capacitance | Crss | 21 | pF | 2 |
CAD (KiCad official)
- Symbol:
IRLML0060TRPBF - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
irlml0060trpbf-etched.step/irlml0060trpbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irlml0060trpbf.step/irlml0060trpbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (10 pp, sha256
1ae7289b2b3c500f, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRLML0060TRPBF
**Infineon Technologies** · MOSFETs · SOT-23
IRLML0060TRPBF from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; VGS max ±16 V, gate threshold voltage 1.0 V min to 2.5 V max at VDS = VGS, ID = 25μA. |
| 2 | S | passive | Source; the continuous source (body diode) current is 1.6 A and the pulsed source current is 11 A. |
| 3 | D | passive | Drain; VDS is 60 V max and continuous drain current is 2.7 A at TA = 25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 60 | V | | 1 |
| Continuous Drain Current, TA = 25°C | ID @ TA = 25°C | | | 2.7 | A | VGS @ 10V | 1 |
| Continuous Drain Current, TA = 70°C | ID @ TA = 70°C | | | 2.1 | A | VGS @ 10V | 1 |
| Pulsed Drain Current | IDM | | | 11 | A | | 1 |
| Maximum Power Dissipation, TA = 25°C | PD @TA = 25°C | | | 1.25 | W | | 1 |
| Maximum Power Dissipation, TA = 70°C | PD @TA = 70°C | | | 0.8 | W | | 1 |
| Linear Derating Factor | | | | 0.01 | W/°C | | 1 |
| Gate-to-Source Voltage | VGS | -16 | | 16 | V | | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |
| Junction-to-Ambient | RJA | | | 100 | °C/W | | 1 |
| Junction-to-Ambient (t<10s) | RJA | | | 99 | °C/W | t<10s | 1 |
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 60 | | | V | VGS = 0V, ID = 250μA | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 98 | 116 | mΩ | VGS = 4.5V, ID = 2.2A | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 78 | 92 | mΩ | VGS = 10V, ID = 2.7A | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | | 2.5 | V | VDS = VGS, ID = 25μA | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 20 | μA | VDS = 60V, VGS = 0V | 2 |
| Drain-to-Source Leakage Current, TJ = 125°C | IDSS | | | 250 | μA | VDS = 60V, VGS = 0V, TJ = 125°C | 2 |
| Gate-to-Source Forward Leakage | IGSS | | | 100 | nA | VGS = 20V | 2 |
| Gate-to-Source Reverse Leakage | | | | -100 | nA | VGS = -20V | 2 |
| Forward Transconductance | gfs | 7.6 | | | S | VDS = 25V, ID = 2.7A | 2 |
| Reverse Recovery Time | trr | | 14 | 21 | ns | TJ = 25°C, VR = 30V, IF=1.6A | 2 |
| Reverse Recovery Charge | Qrr | | 13 | 20 | nC | TJ = 25°C, VR = 30V, IF=1.6A | 2 |
| Diode Forward Voltage | VSD | | | 1.3 | V | TJ = 25°C, IS = 2.7A, VGS = 0V | 2 |
| Continuous Source Current (Body Diode) | IS | | | 1.6 | A | | 2 |
| Pulsed Source Current (Body Diode) | ISM | | | 11 | A | | 2 |
| Breakdown Voltage Temp. Coefficient | V(BR)DSS/TJ | | 0.06 | | V/°C | Reference to 25°C, ID = 1mA | 2 |
| Internal Gate Resistance | RG | | 1.6 | | | | 2 |
| Total Gate Charge | Qg | | 2.5 | | nC | | 2 |
| Gate-to-Source Charge | Qgs | | 0.7 | | nC | | 2 |
| Gate-to-Drain (Miller) Charge | Qgd | | 1.3 | | nC | | 2 |
| Turn-On Delay Time | td(on) | | 5.4 | | ns | | 2 |
| Rise Time | tr | | 6.3 | | ns | | 2 |
| Turn-Off Delay Time | td(off) | | 6.8 | | ns | | 2 |
| Fall Time | tf | | 4.2 | | ns | | 2 |
| Input Capacitance | Ciss | | 290 | | pF | | 2 |
| Output Capacitance | Coss | | 37 | | pF | | 2 |
| Reverse Transfer Capacitance | Crss | | 21 | | pF | | 2 |
## CAD (KiCad official)
- Symbol: `IRLML0060TRPBF`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `irlml0060trpbf-etched.step` / `irlml0060trpbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irlml0060trpbf.step` / `irlml0060trpbf.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586187026336501760) (10 pp, sha256 `1ae7289b2b3c500f`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irlml0060trpbf-datasheet.pdf)