# IRLML0040TRPBF

**Infineon Technologies** · MOSFETs · SOT-23

IRLML0040TRPBF from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage max ±16 V, gate threshold 1.0 to 2.5 V (VDS = VGS, ID = 25µA). |
| 2 | S | passive | Source; continuous body-diode source current 1.3 A and drain current 3.6 A at TA = 25°C. |
| 3 | D | passive | Drain; drain-source voltage 40 V max, continuous drain current 3.6 A at TA = 25°C, pulsed 15 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 40 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 3.6 | A | VGS @ 10V, TA = 25°C | 1 |
| Continuous Drain Current | ID |  |  | 2.9 | A | VGS @ 10V, TA = 70°C | 1 |
| Pulsed Drain Current | IDM |  |  | 40 | A |  | 1 |
| Maximum Power Dissipation | PD |  |  | 1.3 | W | TA = 25°C | 1 |
| Maximum Power Dissipation | PD |  |  | 0.8 | W | TA = 70°C | 1 |
| Linear Derating Factor |  |  |  | 0.01 | W/°C |  | 1 |
| Gate-to-Source Voltage | VGS | -16 |  | 16 | V |  | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Junction-to-Ambient Thermal Resistance | RθJA |  |  | 100 | °C/W |  | 1 |
| Junction-to-Ambient Thermal Resistance (t<10s) | RθJA |  |  | 99 | °C/W | t<10s | 1 |
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 40 |  |  | V | VGS = 0V, ID = 250μA | 2 |
| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/ΔTJ |  | 0.04 |  | V/°C | Reference to 25°C, ID = 1mA | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) |  | 44 | 56 | mΩ | VGS = 10V, ID = 3.6A | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) |  | 62 | 78 | mΩ | VGS = 4.5V, ID = 2.9A | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.8 | 2.5 | V | VDS = VGS, ID = 25μA | 2 |
| Drain-to-Source Leakage Current | IDSS |  |  | 20 | μA | VDS = 40V, VGS = 0V | 2 |
| Drain-to-Source Leakage Current | IDSS |  |  | 250 | μA | VDS = 40V, VGS = 0V, TJ = 125°C | 2 |
| Gate-to-Source Forward Leakage | IGSS |  |  | 100 | nA | VGS = 16V | 2 |
| Gate-to-Source Reverse Leakage | IGSS |  |  | -100 | nA | VGS = -16V | 2 |
| Forward Transconductance | gfs | 6.2 |  |  | S | VDS = 10V, ID = 3.6A | 2 |
| Total Gate Charge | Qg |  | 2.6 | 3.9 | nC | ID = 3.6A, VDS = 20V, VGS = 4.5V | 2 |
| Internal Gate Resistance | RG |  | 1.1 |  | Ω |  | 2 |
| Gate-to-Source Charge | Qgs |  | 0.7 |  | nC | ID = 3.6A, VDS = 20V, VGS = 4.5V | 2 |
| Gate-to-Drain (Miller) Charge | Qgd |  | 1.4 |  | nC | ID = 3.6A, VDS = 20V, VGS = 4.5V | 2 |
| Turn-On Delay Time | td(on) |  | 5.1 |  | ns | ID = 1.0A, RG = 6.8Ω, VGS = 4.5V, VDD = 20V | 2 |
| Rise Time | tr |  | 5.4 |  | ns | ID = 1.0A, RG = 6.8Ω, VGS = 4.5V, VDD = 20V | 2 |
| Turn-Off Delay Time | td(off) |  | 6.4 |  | ns | ID = 1.0A, RG = 6.8Ω, VGS = 4.5V, VDD = 20V | 2 |
| Fall Time | tf |  | 4.3 |  | ns | ID = 1.0A, RG = 6.8Ω, VGS = 4.5V, VDD = 20V | 2 |
| Input Capacitance | Ciss |  | 266 |  | pF | VGS = 0V, VDS = 25V, ƒ = 1.0MHz | 2 |
| Output Capacitance | Coss |  | 49 |  | pF | VGS = 0V, VDS = 25V, ƒ = 1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 29 |  | pF | VGS = 0V, VDS = 25V, ƒ = 1.0MHz | 2 |
| Continuous Source Current (Body Diode) | IS |  |  | 1.3 | A |  | 2 |
| Pulsed Source Current (Body Diode) | ISM |  |  | 15 | A |  | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | TJ = 25°C, IS = 1.3A, VGS = 0V | 2 |
| Reverse Recovery Time | trr |  | 10 |  | ns | TJ = 25°C, IF = 1.3A, di/dt = 100A/μs | 2 |
| Reverse Recovery Charge | Qrr |  | 9.3 |  | nC | TJ = 25°C, IF = 1.3A, di/dt = 100A/μs | 2 |

## CAD (KiCad official)

- Symbol: `IRLML0040TRPBF`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `irlml0040trpbf-etched.step` / `irlml0040trpbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irlml0040trpbf.step` / `irlml0040trpbf.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586187020397367296) (10 pp, sha256 `3578c7a1c5274c72`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irlml0040trpbf-datasheet.pdf)