component
IRLML0040TRPBF
Public Made by Adomby adom
Infineon Technologies MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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IRLML0040TRPBF
Infineon Technologies · MOSFETs · SOT-23
IRLML0040TRPBF from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage max ±16 V, gate threshold 1.0 to 2.5 V (VDS = VGS, ID = 25µA). |
| 2 | S | passive | Source; continuous body-diode source current 1.3 A and drain current 3.6 A at TA = 25°C. |
| 3 | D | passive | Drain; drain-source voltage 40 V max, continuous drain current 3.6 A at TA = 25°C, pulsed 15 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 40 | V | 1 | |||
| Continuous Drain Current | ID | 3.6 | A | VGS @ 10V, TA = 25°C | 1 | ||
| Continuous Drain Current | ID | 2.9 | A | VGS @ 10V, TA = 70°C | 1 | ||
| Pulsed Drain Current | IDM | 40 | A | 1 | |||
| Maximum Power Dissipation | PD | 1.3 | W | TA = 25°C | 1 | ||
| Maximum Power Dissipation | PD | 0.8 | W | TA = 70°C | 1 | ||
| Linear Derating Factor | 0.01 | W/°C | 1 | ||||
| Gate-to-Source Voltage | VGS | -16 | 16 | V | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 100 | °C/W | 1 | |||
| Junction-to-Ambient Thermal Resistance (t<10s) | RθJA | 99 | °C/W | t<10s | 1 | ||
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 40 | V | VGS = 0V, ID = 250μA | 2 | ||
| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/ΔTJ | 0.04 | V/°C | Reference to 25°C, ID = 1mA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 44 | 56 | mΩ | VGS = 10V, ID = 3.6A | 2 | |
| Static Drain-to-Source On-Resistance | RDS(on) | 62 | 78 | mΩ | VGS = 4.5V, ID = 2.9A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.8 | 2.5 | V | VDS = VGS, ID = 25μA | 2 |
| Drain-to-Source Leakage Current | IDSS | 20 | μA | VDS = 40V, VGS = 0V | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 250 | μA | VDS = 40V, VGS = 0V, TJ = 125°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS = 16V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS = -16V | 2 | ||
| Forward Transconductance | gfs | 6.2 | S | VDS = 10V, ID = 3.6A | 2 | ||
| Total Gate Charge | Qg | 2.6 | 3.9 | nC | ID = 3.6A, VDS = 20V, VGS = 4.5V | 2 | |
| Internal Gate Resistance | RG | 1.1 | Ω | 2 | |||
| Gate-to-Source Charge | Qgs | 0.7 | nC | ID = 3.6A, VDS = 20V, VGS = 4.5V | 2 | ||
| Gate-to-Drain (Miller) Charge | Qgd | 1.4 | nC | ID = 3.6A, VDS = 20V, VGS = 4.5V | 2 | ||
| Turn-On Delay Time | td(on) | 5.1 | ns | ID = 1.0A, RG = 6.8Ω, VGS = 4.5V, VDD = 20V | 2 | ||
| Rise Time | tr | 5.4 | ns | ID = 1.0A, RG = 6.8Ω, VGS = 4.5V, VDD = 20V | 2 | ||
| Turn-Off Delay Time | td(off) | 6.4 | ns | ID = 1.0A, RG = 6.8Ω, VGS = 4.5V, VDD = 20V | 2 | ||
| Fall Time | tf | 4.3 | ns | ID = 1.0A, RG = 6.8Ω, VGS = 4.5V, VDD = 20V | 2 | ||
| Input Capacitance | Ciss | 266 | pF | VGS = 0V, VDS = 25V, ƒ = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 49 | pF | VGS = 0V, VDS = 25V, ƒ = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 29 | pF | VGS = 0V, VDS = 25V, ƒ = 1.0MHz | 2 | ||
| Continuous Source Current (Body Diode) | IS | 1.3 | A | 2 | |||
| Pulsed Source Current (Body Diode) | ISM | 15 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.2 | V | TJ = 25°C, IS = 1.3A, VGS = 0V | 2 | ||
| Reverse Recovery Time | trr | 10 | ns | TJ = 25°C, IF = 1.3A, di/dt = 100A/μs | 2 | ||
| Reverse Recovery Charge | Qrr | 9.3 | nC | TJ = 25°C, IF = 1.3A, di/dt = 100A/μs | 2 |
CAD (KiCad official)
- Symbol:
IRLML0040TRPBF - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
irlml0040trpbf-etched.step/irlml0040trpbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irlml0040trpbf.step/irlml0040trpbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (10 pp, sha256
3578c7a1c5274c72, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).