# IRLIZ14GPBF

**Vishay Intertech** · MOSFETs · TO-220

IRLIZ14GPBF from Vishay Intertech, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate, logic-level drive with RDS(on) specified at VGS = 4 V and 5 V, absolute maximum VGS ±10 V. |
| 2 | D | passive | Drain, rated for VDS 60 V and continuous current of 8.0 A at TC = 25 °C (pulsed 32 A). |
| 3 | S | passive | Source, carries the 8.0 A continuous body-diode current (IS) and is the reference for gate drive. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | VDS | 60 |  |  | V | VGS = 0 V, ID = 250 μA | 2 |
| Gate-source threshold voltage | VGS(th) | 1 |  | 2 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-source leakage | IGSS | -100 |  | 100 | nA | VGS = ± 10 V | 2 |
| Zero gate voltage drain current | IDSS |  |  | 25 | μA | VDS = 60 V, VGS = 0 V | 2 |
| Zero gate voltage drain current | IDSS |  |  | 250 | μA | VDS = 48 V, VGS = 0 V, TJ = 150 °C | 2 |
| Drain-source on-state resistance | RDS(on) |  |  | 0.2 | Ω | VGS = 5.0 V, ID = 4.8 A | 2 |
| Drain-source on-state resistance | RDS(on) |  |  | 0.28 | Ω | VGS = 4.0 V, ID = 4.0 A | 2 |
| Forward transconductance | gfs | 3.6 |  |  | S | VDS = 25 V, ID = 4.8 A | 2 |
| Total gate charge | Qg |  |  | 8.4 | nC | VGS = 5.0 V, ID = 10 A, VDS = 48 V | 2 |
| Gate-source charge | Qgs |  |  | 3.5 | nC | VGS = 5.0 V, ID = 10 A, VDS = 48 V | 2 |
| Gate-drain charge | Qgd |  |  | 6 | nC | VGS = 5.0 V, ID = 10 A, VDS = 48 V | 2 |
| Continuous source-drain diode current | IS |  |  | 8 | A |  | 2 |
| Pulsed diode forward current | ISM |  |  | 32 | A |  | 2 |
| Body diode voltage | VSD |  |  | 1.6 | V | TJ = 25 °C, IS = 8.0 A, VGS = 0 V | 2 |
| Body diode reverse recovery time | trr |  | 65 | 130 | ns | TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μs | 2 |
| Body diode reverse recovery charge | Qrr |  | 0.33 | 0.65 | μC | TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μs | 2 |
| Maximum junction-to-ambient thermal resistance | RthJA |  |  | 65 | °C/W |  | 2 |
| Maximum junction-to-case (drain) thermal resistance | RthJC |  |  | 5.5 | °C/W |  | 2 |
| Drain-source voltage | VDS |  |  | 60 | V | TC = 25 °C | 1 |
| Gate-source voltage | VGS | -10 |  | 10 | V | TC = 25 °C | 1 |
| Continuous drain current | ID |  |  | 8 | A | VGS at 5.0 V, TC = 25 °C | 1 |
| Continuous drain current | ID |  |  | 5.7 | A | VGS at 5.0 V, TC = 100 °C | 1 |
| Pulsed drain current | IDM |  |  | 32 | A | TC = 25 °C | 1 |
| Linear derating factor |  |  |  | 0.18 | W/°C |  | 1 |
| Single pulse avalanche energy | EAS |  |  | 39.5 | mJ | VDD = 25 V, starting TJ = 25 °C, L = 0.79 mH, RG = 25 Ω, IAS = 10 A | 1 |
| Maximum power dissipation | PD |  |  | 27 | W | TC = 25 °C | 1 |
| Peak diode recovery dV/dt | dV/dt |  |  | 4.5 | V/ns | ISD ≤ 10 A, dI/dt ≤ 90 A/μs, VDD ≤ VDS, TJ ≤ 175 °C | 1 |
| Operating junction and storage temperature range | TJ, Tstg | -55 |  | 175 | °C |  | 1 |
| Soldering recommendations (peak temperature) |  |  |  | 300 | °C | For 10 s, 1.6 mm from case | 1 |
| Mounting torque |  |  |  | 0.6 | Nm | M3 screw | 1 |
| VDS temperature coefficient | ΔVDS/TJ |  | 0.07 |  | V/°C | Reference to 25 °C, ID = 1 mA | 2 |
| Input capacitance | Ciss |  | 400 |  | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 |
| Output capacitance | Coss |  | 170 |  | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 |
| Reverse transfer capacitance | Crss |  | 42 |  | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 |
| Drain to sink capacitance | C |  | 12 |  | pF | f = 1.0 MHz | 2 |
| Turn-on delay time | td(on) |  | 9.3 |  | ns | VDD = 30 V, ID = 10 A, RG = 12 Ω, RD = 2.8 Ω | 2 |
| Rise time | tr |  | 110 |  | ns | VDD = 30 V, ID = 10 A, RG = 12 Ω, RD = 2.8 Ω | 2 |
| Turn-off delay time | td(off) |  | 17 |  | ns | VDD = 30 V, ID = 10 A, RG = 12 Ω, RD = 2.8 Ω | 2 |
| Fall time | tf |  | 26 |  | ns | VDD = 30 V, ID = 10 A, RG = 12 Ω, RD = 2.8 Ω | 2 |
| Internal drain inductance | LD |  | 4.5 |  | nH | Between lead, 6 mm (0.25") from package and center of die contact | 2 |
| Internal source inductance | LS |  | 7.5 |  | nH | Between lead, 6 mm (0.25") from package and center of die contact | 2 |

## CAD (KiCad official)

- Symbol: `IRLIZ14GPBF`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `irliz14gpbf-etched.step` / `irliz14gpbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irliz14gpbf.step` / `irliz14gpbf.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Vishay Intertech datasheet](docs/irliz14gpbf-datasheet.pdf) (10 pp, sha256 `89675e54d376195c`, retrieved 2026-10-27, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irliz14gpbf-datasheet.pdf)