component
IRLIZ14GPBF
Public Made by Adomby adom
Vishay Intertech MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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| irliz14gpbf-etched.step | 12d ago |
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| irliz14gpbf-hero.overlay.json | 12d ago |
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| README.md | 12d ago |
IRLIZ14GPBF
Vishay Intertech · MOSFETs · TO-220
IRLIZ14GPBF from Vishay Intertech, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate, logic-level drive with RDS(on) specified at VGS = 4 V and 5 V, absolute maximum VGS ±10 V. |
| 2 | D | passive | Drain, rated for VDS 60 V and continuous current of 8.0 A at TC = 25 °C (pulsed 32 A). |
| 3 | S | passive | Source, carries the 8.0 A continuous body-diode current (IS) and is the reference for gate drive. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | VDS | 60 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Gate-source threshold voltage | VGS(th) | 1 | 2 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-source leakage | IGSS | -100 | 100 | nA | VGS = ± 10 V | 2 | |
| Zero gate voltage drain current | IDSS | 25 | μA | VDS = 60 V, VGS = 0 V | 2 | ||
| Zero gate voltage drain current | IDSS | 250 | μA | VDS = 48 V, VGS = 0 V, TJ = 150 °C | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.2 | Ω | VGS = 5.0 V, ID = 4.8 A | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.28 | Ω | VGS = 4.0 V, ID = 4.0 A | 2 | ||
| Forward transconductance | gfs | 3.6 | S | VDS = 25 V, ID = 4.8 A | 2 | ||
| Total gate charge | Qg | 8.4 | nC | VGS = 5.0 V, ID = 10 A, VDS = 48 V | 2 | ||
| Gate-source charge | Qgs | 3.5 | nC | VGS = 5.0 V, ID = 10 A, VDS = 48 V | 2 | ||
| Gate-drain charge | Qgd | 6 | nC | VGS = 5.0 V, ID = 10 A, VDS = 48 V | 2 | ||
| Continuous source-drain diode current | IS | 8 | A | 2 | |||
| Pulsed diode forward current | ISM | 32 | A | 2 | |||
| Body diode voltage | VSD | 1.6 | V | TJ = 25 °C, IS = 8.0 A, VGS = 0 V | 2 | ||
| Body diode reverse recovery time | trr | 65 | 130 | ns | TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μs | 2 | |
| Body diode reverse recovery charge | Qrr | 0.33 | 0.65 | μC | TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μs | 2 | |
| Maximum junction-to-ambient thermal resistance | RthJA | 65 | °C/W | 2 | |||
| Maximum junction-to-case (drain) thermal resistance | RthJC | 5.5 | °C/W | 2 | |||
| Drain-source voltage | VDS | 60 | V | TC = 25 °C | 1 | ||
| Gate-source voltage | VGS | -10 | 10 | V | TC = 25 °C | 1 | |
| Continuous drain current | ID | 8 | A | VGS at 5.0 V, TC = 25 °C | 1 | ||
| Continuous drain current | ID | 5.7 | A | VGS at 5.0 V, TC = 100 °C | 1 | ||
| Pulsed drain current | IDM | 32 | A | TC = 25 °C | 1 | ||
| Linear derating factor | 0.18 | W/°C | 1 | ||||
| Single pulse avalanche energy | EAS | 39.5 | mJ | VDD = 25 V, starting TJ = 25 °C, L = 0.79 mH, RG = 25 Ω, IAS = 10 A | 1 | ||
| Maximum power dissipation | PD | 27 | W | TC = 25 °C | 1 | ||
| Peak diode recovery dV/dt | dV/dt | 4.5 | V/ns | ISD ≤ 10 A, dI/dt ≤ 90 A/μs, VDD ≤ VDS, TJ ≤ 175 °C | 1 | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Soldering recommendations (peak temperature) | 300 | °C | For 10 s, 1.6 mm from case | 1 | |||
| Mounting torque | 0.6 | Nm | M3 screw | 1 | |||
| VDS temperature coefficient | ΔVDS/TJ | 0.07 | V/°C | Reference to 25 °C, ID = 1 mA | 2 | ||
| Input capacitance | Ciss | 400 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Output capacitance | Coss | 170 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Reverse transfer capacitance | Crss | 42 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Drain to sink capacitance | C | 12 | pF | f = 1.0 MHz | 2 | ||
| Turn-on delay time | td(on) | 9.3 | ns | VDD = 30 V, ID = 10 A, RG = 12 Ω, RD = 2.8 Ω | 2 | ||
| Rise time | tr | 110 | ns | VDD = 30 V, ID = 10 A, RG = 12 Ω, RD = 2.8 Ω | 2 | ||
| Turn-off delay time | td(off) | 17 | ns | VDD = 30 V, ID = 10 A, RG = 12 Ω, RD = 2.8 Ω | 2 | ||
| Fall time | tf | 26 | ns | VDD = 30 V, ID = 10 A, RG = 12 Ω, RD = 2.8 Ω | 2 | ||
| Internal drain inductance | LD | 4.5 | nH | Between lead, 6 mm (0.25") from package and center of die contact | 2 | ||
| Internal source inductance | LS | 7.5 | nH | Between lead, 6 mm (0.25") from package and center of die contact | 2 |
CAD (KiCad official)
- Symbol:
IRLIZ14GPBF - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
irliz14gpbf-etched.step/irliz14gpbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irliz14gpbf.step/irliz14gpbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (10 pp, sha256
89675e54d376195c, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).