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IRLB3813PBF
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Infineon Technologies MOSFETs, ITO-220AB-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRLB3813PBF
Infineon Technologies · MOSFETs · ITO-220AB-3
IRLB3813PBF from Infineon Technologies, in a ITO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage is limited to ±20 V maximum, with VGS(th) 1.35 V min to 2.35 V max at ID = 150µA. |
| 2 | D | passive | Drain, also connected to the tab; drain-to-source voltage is 30 V maximum with 260 A continuous at TC = 25°C (package limit 120 A). |
| 3 | S | passive | Source; body diode continuous source current is 260 A maximum and pulsed source current is 1050 A maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | ITO-220AB-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current, VGS @ 10V | ID | 260 | A | TC = 25°C | 1 | ||
| Continuous Drain Current, VGS @ 10V | ID | 190 | A | TC = 100°C | 1 | ||
| Pulsed Drain Current | IDM | 1050 | A | 1 | |||
| Maximum Power Dissipation | PD | 230 | W | TC = 25°C | 1 | ||
| Maximum Power Dissipation | PD | 120 | W | TC = 100°C | 1 | ||
| Linear Derating Factor | 1.6 | W/°C | 1 | ||||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Soldering Temperature | 300 | °C | for 10 seconds, 1.6mm from case | 1 | |||
| Mounting torque, 6-32 or M3 screw | 10 | lbin (1.1Nm) | 6-32 or M3 screw | 1 | |||
| Junction-to-Case | RθJC | 0.64 | °C/W | 1 | |||
| Case-to-Sink, Flat Greased Surface | RθCS | 0.5 | °C/W | 1 | |||
| Junction-to-Ambient | RθJA | 62 | °C/W | When mounted on 1" square PCB (FR-4 or G-10 Material) | 1 | ||
| Drain-to-Source Breakdown Voltage | BVDSS | 30 | V | VGS = 0V, ID = 250µA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 1.6 | 1.95 | mΩ | VGS = 10V, ID = 60A | 2 | |
| Static Drain-to-Source On-Resistance | RDS(on) | 2 | 2.6 | mΩ | VGS = 4.5V, ID = 48A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.35 | 1.9 | 2.35 | V | VDS = VGS, ID = 150µA | 2 |
| Drain-to-Source Leakage Current | IDSS | 1 | µA | VDS = 24V, VGS = 0V | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 100 | µA | VDS = 24V, VGS = 0V, TJ = 125°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS = 20V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS = -20V | 2 | ||
| Forward Transconductance | gfs | 140 | S | VDS = 15V, ID = 48A | 2 | ||
| Total Gate Charge | Qg | 57 | 86 | nC | VDS = 15V, VGS = 4.5V, ID = 48A | 2 | |
| Gate Resistance | RG | 0.87 | 1.3 | Ω | 2 | ||
| Continuous Source Current (Body Diode) | IS | 260 | A | MOSFET symbol showing the integral reverse p-n junction diode | 2 | ||
| Pulsed Source Current (Body Diode) | ISM | 1050 | A | 2 | |||
| Diode Forward Voltage | VSD | 1 | V | TJ = 25°C, IS = 48A, VGS = 0V | 2 | ||
| Reverse Recovery Time | trr | 24 | 36 | ns | TJ = 25°C, IF = 48A, VDD = 15V, di/dt = 244A/µs | 2 | |
| Reverse Recovery Charge | Qrr | 22 | 33 | nC | TJ = 25°C, IF = 48A, VDD = 15V, di/dt = 244A/µs | 2 | |
| Single Pulse Avalanche Energy | EAS | 520 | mJ | Starting TJ = 25°C, L = 0.45mH, RG = 25Ω, IAS = 48A | 2 | ||
| Avalanche Current | IAR | 48 | A | Starting TJ = 25°C, L = 0.45mH, RG = 25Ω, IAS = 48A | 2 |
CAD (KiCad official)
- Symbol:
IRLB3813PBF - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: ITO-220AB-3 (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (9 pp, sha256
04b8048c35aa6dfa, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRLB3813PBF
**Infineon Technologies** · MOSFETs · ITO-220AB-3
IRLB3813PBF from Infineon Technologies, in a ITO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage is limited to ±20 V maximum, with VGS(th) 1.35 V min to 2.35 V max at ID = 150µA. |
| 2 | D | passive | Drain, also connected to the tab; drain-to-source voltage is 30 V maximum with 260 A continuous at TC = 25°C (package limit 120 A). |
| 3 | S | passive | Source; body diode continuous source current is 260 A maximum and pulsed source current is 1050 A maximum. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | ITO-220AB-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDS | | | 30 | V | | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current, VGS @ 10V | ID | | | 260 | A | TC = 25°C | 1 |
| Continuous Drain Current, VGS @ 10V | ID | | | 190 | A | TC = 100°C | 1 |
| Pulsed Drain Current | IDM | | | 1050 | A | | 1 |
| Maximum Power Dissipation | PD | | | 230 | W | TC = 25°C | 1 |
| Maximum Power Dissipation | PD | | | 120 | W | TC = 100°C | 1 |
| Linear Derating Factor | | | | 1.6 | W/°C | | 1 |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | | 175 | °C | | 1 |
| Soldering Temperature | | | | 300 | °C | for 10 seconds, 1.6mm from case | 1 |
| Mounting torque, 6-32 or M3 screw | | | | 10 | lbin (1.1Nm) | 6-32 or M3 screw | 1 |
| Junction-to-Case | RθJC | | | 0.64 | °C/W | | 1 |
| Case-to-Sink, Flat Greased Surface | RθCS | | 0.5 | | °C/W | | 1 |
| Junction-to-Ambient | RθJA | | | 62 | °C/W | When mounted on 1" square PCB (FR-4 or G-10 Material) | 1 |
| Drain-to-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS = 0V, ID = 250µA | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 1.6 | 1.95 | mΩ | VGS = 10V, ID = 60A | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 2 | 2.6 | mΩ | VGS = 4.5V, ID = 48A | 2 |
| Gate Threshold Voltage | VGS(th) | 1.35 | 1.9 | 2.35 | V | VDS = VGS, ID = 150µA | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 1 | µA | VDS = 24V, VGS = 0V | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 100 | µA | VDS = 24V, VGS = 0V, TJ = 125°C | 2 |
| Gate-to-Source Forward Leakage | IGSS | | | 100 | nA | VGS = 20V | 2 |
| Gate-to-Source Reverse Leakage | IGSS | | | -100 | nA | VGS = -20V | 2 |
| Forward Transconductance | gfs | 140 | | | S | VDS = 15V, ID = 48A | 2 |
| Total Gate Charge | Qg | | 57 | 86 | nC | VDS = 15V, VGS = 4.5V, ID = 48A | 2 |
| Gate Resistance | RG | | 0.87 | 1.3 | Ω | | 2 |
| Continuous Source Current (Body Diode) | IS | | | 260 | A | MOSFET symbol showing the integral reverse p-n junction diode | 2 |
| Pulsed Source Current (Body Diode) | ISM | | | 1050 | A | | 2 |
| Diode Forward Voltage | VSD | | | 1 | V | TJ = 25°C, IS = 48A, VGS = 0V | 2 |
| Reverse Recovery Time | trr | | 24 | 36 | ns | TJ = 25°C, IF = 48A, VDD = 15V, di/dt = 244A/µs | 2 |
| Reverse Recovery Charge | Qrr | | 22 | 33 | nC | TJ = 25°C, IF = 48A, VDD = 15V, di/dt = 244A/µs | 2 |
| Single Pulse Avalanche Energy | EAS | | | 520 | mJ | Starting TJ = 25°C, L = 0.45mH, RG = 25Ω, IAS = 48A | 2 |
| Avalanche Current | IAR | | | 48 | A | Starting TJ = 25°C, L = 0.45mH, RG = 25Ω, IAS = 48A | 2 |
## CAD (KiCad official)
- Symbol: `IRLB3813PBF`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: ITO-220AB-3 (KiCad packages3D, STEP)
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588892509392658432) (9 pp, sha256 `04b8048c35aa6dfa`, retrieved 2026-10-15, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irlb3813pbf-datasheet.pdf)