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IRLB3813PBF

Public Made by Adom

by adom

Infineon Technologies MOSFETs, ITO-220AB-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Symbol & Footprint

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Contents

README

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IRLB3813PBF

Infineon Technologies · MOSFETs · ITO-220AB-3

IRLB3813PBF from Infineon Technologies, in a ITO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-to-source voltage is limited to ±20 V maximum, with VGS(th) 1.35 V min to 2.35 V max at ID = 150µA.
2 D passive Drain, also connected to the tab; drain-to-source voltage is 30 V maximum with 260 A continuous at TC = 25°C (package limit 120 A).
3 S passive Source; body diode continuous source current is 260 A maximum and pulsed source current is 1050 A maximum.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package ITO-220AB-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDS 30 V 1
Gate-to-Source Voltage VGS -20 20 V 1
Continuous Drain Current, VGS @ 10V ID 260 A TC = 25°C 1
Continuous Drain Current, VGS @ 10V ID 190 A TC = 100°C 1
Pulsed Drain Current IDM 1050 A 1
Maximum Power Dissipation PD 230 W TC = 25°C 1
Maximum Power Dissipation PD 120 W TC = 100°C 1
Linear Derating Factor 1.6 W/°C 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 175 °C 1
Soldering Temperature 300 °C for 10 seconds, 1.6mm from case 1
Mounting torque, 6-32 or M3 screw 10 lbin (1.1Nm) 6-32 or M3 screw 1
Junction-to-Case RθJC 0.64 °C/W 1
Case-to-Sink, Flat Greased Surface RθCS 0.5 °C/W 1
Junction-to-Ambient RθJA 62 °C/W When mounted on 1" square PCB (FR-4 or G-10 Material) 1
Drain-to-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 250µA 2
Static Drain-to-Source On-Resistance RDS(on) 1.6 1.95 mΩ VGS = 10V, ID = 60A 2
Static Drain-to-Source On-Resistance RDS(on) 2 2.6 mΩ VGS = 4.5V, ID = 48A 2
Gate Threshold Voltage VGS(th) 1.35 1.9 2.35 V VDS = VGS, ID = 150µA 2
Drain-to-Source Leakage Current IDSS 1 µA VDS = 24V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 100 µA VDS = 24V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -20V 2
Forward Transconductance gfs 140 S VDS = 15V, ID = 48A 2
Total Gate Charge Qg 57 86 nC VDS = 15V, VGS = 4.5V, ID = 48A 2
Gate Resistance RG 0.87 1.3 Ω 2
Continuous Source Current (Body Diode) IS 260 A MOSFET symbol showing the integral reverse p-n junction diode 2
Pulsed Source Current (Body Diode) ISM 1050 A 2
Diode Forward Voltage VSD 1 V TJ = 25°C, IS = 48A, VGS = 0V 2
Reverse Recovery Time trr 24 36 ns TJ = 25°C, IF = 48A, VDD = 15V, di/dt = 244A/µs 2
Reverse Recovery Charge Qrr 22 33 nC TJ = 25°C, IF = 48A, VDD = 15V, di/dt = 244A/µs 2
Single Pulse Avalanche Energy EAS 520 mJ Starting TJ = 25°C, L = 0.45mH, RG = 25Ω, IAS = 48A 2
Avalanche Current IAR 48 A Starting TJ = 25°C, L = 0.45mH, RG = 25Ω, IAS = 48A 2

CAD (KiCad official)

  • Symbol: IRLB3813PBF
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: ITO-220AB-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (9 pp, sha256 04b8048c35aa6dfa, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF