component
IRLB3034PBF
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRLB3034PBF
Infineon Technologies · MOSFETs · TO-220AB
IRLB3034PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the HEXFET; gate-to-source voltage is rated ±20 V (VGS max). |
| 2 | D | passive | Drain terminal; the datasheet rates VDSS at 40 V and continuous ID at 343 A (silicon limited) or 195 A (package limited) at TC = 25°C. |
| 3 | S | passive | Source terminal; the integral body diode has a maximum forward voltage VSD of 1.3 V at IS = 195 A, VGS = 0 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 40 | V | VGS = 0V, ID = 250µA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 2.5 | V | VDS = VGS, ID = 250µA | 2 | |
| Drain-to-Source Leakage Current | IDSS | 20 | µA | VDS = 40V, VGS = 0V | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 250 | µA | VDS = 40V, VGS = 0V, TJ = 125°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS = 20V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS = -20V | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 1.4 | 1.7 | mΩ | VGS = 10V, ID = 195A | 2 | |
| Static Drain-to-Source On-Resistance | RDS(on) | 1.6 | 2 | mΩ | VGS = 4.5V, ID = 172A | 2 | |
| Forward Transconductance | gfs | 286 | S | VDS = 10V, ID = 195A | 2 | ||
| Total Gate Charge | Qg | 108 | 162 | nC | 2 | ||
| Diode Forward Voltage | VSD | 1.3 | V | TJ = 25°C, IS = 195A, VGS = 0V | 2 | ||
| Continuous Drain Current, VGS @ 10V (Silicon Limited) | ID @ TC = 25°C | 343 | A | 1 | |||
| Continuous Drain Current, VGS @ 10V (Silicon Limited) | ID @ TC = 100°C | 243 | A | 1 | |||
| Continuous Drain Current, VGS @ 10V (Package Limited) | ID @ TC = 25°C | 195 | A | VGS @ 10V (Package Limited) | 1 | ||
| Pulsed Drain Current | IDM | 1372 | A | Pulse width ≤ 400µs; duty cycle ≤ 2% | 2 | ||
| Maximum Power Dissipation | PD @TC = 25°C | 375 | W | TC = 25°C | 1 | ||
| Linear Derating Factor | 2.5 | W/°C | 1 | ||||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Peak Diode Recovery | dv/dt | 4.6 | V/ns | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | Printed as -55 to +175 | 1 | |
| Soldering Temperature | 300 | °C | For 10 seconds, 1.6mm from case | 1 | |||
| Mounting Torque | 10 | lbfin | 6-32 or M3 screw; printed as 10lbfin (1.1Nm) | 1 | |||
| Single Pulse Avalanche Energy (Thermally limited) | EAS | 255 | mJ | Thermally limited, single pulse | 1 | ||
| Avalanche Current | IAR | 195 | A | 1 | |||
| Junction-to-Case Thermal Resistance | RθJC | 0.4 | °C/W | Junction-to-Case | 1 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 62 | °C/W | Junction-to-Ambient | 1 |
CAD (KiCad official)
- Symbol:
IRLB3034PBF - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
irlb3034pbf-etched.step/irlb3034pbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irlb3034pbf.step/irlb3034pbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (8 pp, sha256
c309bc8399fdbac4, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRLB3034PBF
**Infineon Technologies** · MOSFETs · TO-220AB
IRLB3034PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the HEXFET; gate-to-source voltage is rated ±20 V (VGS max). |
| 2 | D | passive | Drain terminal; the datasheet rates VDSS at 40 V and continuous ID at 343 A (silicon limited) or 195 A (package limited) at TC = 25°C. |
| 3 | S | passive | Source terminal; the integral body diode has a maximum forward voltage VSD of 1.3 V at IS = 195 A, VGS = 0 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 40 | | | V | VGS = 0V, ID = 250µA | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | | 2.5 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 20 | µA | VDS = 40V, VGS = 0V | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 250 | µA | VDS = 40V, VGS = 0V, TJ = 125°C | 2 |
| Gate-to-Source Forward Leakage | IGSS | | | 100 | nA | VGS = 20V | 2 |
| Gate-to-Source Reverse Leakage | IGSS | | | -100 | nA | VGS = -20V | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 1.4 | 1.7 | mΩ | VGS = 10V, ID = 195A | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 1.6 | 2 | mΩ | VGS = 4.5V, ID = 172A | 2 |
| Forward Transconductance | gfs | 286 | | | S | VDS = 10V, ID = 195A | 2 |
| Total Gate Charge | Qg | | 108 | 162 | nC | | 2 |
| Diode Forward Voltage | VSD | | | 1.3 | V | TJ = 25°C, IS = 195A, VGS = 0V | 2 |
| Continuous Drain Current, VGS @ 10V (Silicon Limited) | ID @ TC = 25°C | | | 343 | A | | 1 |
| Continuous Drain Current, VGS @ 10V (Silicon Limited) | ID @ TC = 100°C | | | 243 | A | | 1 |
| Continuous Drain Current, VGS @ 10V (Package Limited) | ID @ TC = 25°C | | | 195 | A | VGS @ 10V (Package Limited) | 1 |
| Pulsed Drain Current | IDM | | | 1372 | A | Pulse width ≤ 400µs; duty cycle ≤ 2% | 2 |
| Maximum Power Dissipation | PD @TC = 25°C | | | 375 | W | TC = 25°C | 1 |
| Linear Derating Factor | | | | 2.5 | W/°C | | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Peak Diode Recovery | dv/dt | | | 4.6 | V/ns | | 1 |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | | 175 | °C | Printed as -55 to +175 | 1 |
| Soldering Temperature | | | | 300 | °C | For 10 seconds, 1.6mm from case | 1 |
| Mounting Torque | | | | 10 | lbfin | 6-32 or M3 screw; printed as 10lbfin (1.1Nm) | 1 |
| Single Pulse Avalanche Energy (Thermally limited) | EAS | | | 255 | mJ | Thermally limited, single pulse | 1 |
| Avalanche Current | IAR | | | 195 | A | | 1 |
| Junction-to-Case Thermal Resistance | RθJC | | | 0.4 | °C/W | Junction-to-Case | 1 |
| Junction-to-Ambient Thermal Resistance | RθJA | | | 62 | °C/W | Junction-to-Ambient | 1 |
## CAD (KiCad official)
- Symbol: `IRLB3034PBF`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `irlb3034pbf-etched.step` / `irlb3034pbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irlb3034pbf.step` / `irlb3034pbf.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588890232016556032) (8 pp, sha256 `c309bc8399fdbac4`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irlb3034pbf-datasheet.pdf)