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IRLB3034PBF

Public Made by Adom

by adom

Infineon Technologies MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRLB3034PBF

Infineon Technologies · MOSFETs · TO-220AB

IRLB3034PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the HEXFET; gate-to-source voltage is rated ±20 V (VGS max).
2 D passive Drain terminal; the datasheet rates VDSS at 40 V and continuous ID at 343 A (silicon limited) or 195 A (package limited) at TC = 25°C.
3 S passive Source terminal; the integral body diode has a maximum forward voltage VSD of 1.3 V at IS = 195 A, VGS = 0 V.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage V(BR)DSS 40 V VGS = 0V, ID = 250µA 2
Gate Threshold Voltage VGS(th) 1 2.5 V VDS = VGS, ID = 250µA 2
Drain-to-Source Leakage Current IDSS 20 µA VDS = 40V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 250 µA VDS = 40V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -20V 2
Static Drain-to-Source On-Resistance RDS(on) 1.4 1.7 mΩ VGS = 10V, ID = 195A 2
Static Drain-to-Source On-Resistance RDS(on) 1.6 2 mΩ VGS = 4.5V, ID = 172A 2
Forward Transconductance gfs 286 S VDS = 10V, ID = 195A 2
Total Gate Charge Qg 108 162 nC 2
Diode Forward Voltage VSD 1.3 V TJ = 25°C, IS = 195A, VGS = 0V 2
Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C 343 A 1
Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C 243 A 1
Continuous Drain Current, VGS @ 10V (Package Limited) ID @ TC = 25°C 195 A VGS @ 10V (Package Limited) 1
Pulsed Drain Current IDM 1372 A Pulse width ≤ 400µs; duty cycle ≤ 2% 2
Maximum Power Dissipation PD @TC = 25°C 375 W TC = 25°C 1
Linear Derating Factor 2.5 W/°C 1
Gate-to-Source Voltage VGS -20 20 V 1
Peak Diode Recovery dv/dt 4.6 V/ns 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 175 °C Printed as -55 to +175 1
Soldering Temperature 300 °C For 10 seconds, 1.6mm from case 1
Mounting Torque 10 lbfin 6-32 or M3 screw; printed as 10lbfin (1.1Nm) 1
Single Pulse Avalanche Energy (Thermally limited) EAS 255 mJ Thermally limited, single pulse 1
Avalanche Current IAR 195 A 1
Junction-to-Case Thermal Resistance RθJC 0.4 °C/W Junction-to-Case 1
Junction-to-Ambient Thermal Resistance RθJA 62 °C/W Junction-to-Ambient 1

CAD (KiCad official)

  • Symbol: IRLB3034PBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irlb3034pbf-etched.step / irlb3034pbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irlb3034pbf.step / irlb3034pbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (8 pp, sha256 c309bc8399fdbac4, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF