component
IRL510PBF
Public Made by Adomby adom
Vishay Intertech MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRL510PBF
Vishay Intertech · MOSFETs · TO-220AB
IRL510PBF from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; gate-source voltage is rated at ±10 V, and the part is logic-level driven with RDS(on) specified at VGS = 4 V and 5 V. |
| 2 | D | passive | Drain of the N-channel MOSFET; rated 100 V drain-source with 5.6 A continuous drain current at VGS = 5 V and TC = 25 °C, and the junction-to-case thermal resistance is specified to the drain. |
| 3 | S | passive | Source of the N-channel MOSFET; the integral body diode is rated for 5.6 A continuous source-drain current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 100 | V | 1 | |||
| Gate-source voltage | VGS | -10 | 10 | V | 1 | ||
| Continuous drain current | ID | 5.6 | A | VGS at 5 V, TC = 25 °C | 1 | ||
| Continuous drain current | ID | 4 | A | VGS at 5 V, TC = 100 °C | 1 | ||
| Pulsed drain current | IDM | 18 | A | 1 | |||
| Single pulse avalanche energy | EAS | 100 | mJ | VDD = 25 V, starting TJ = 25 °C, L = 4.8 mH, Rg = 25 Ω, IAS = 5.6 A | 1 | ||
| Repetitive avalanche current | IAR | 5.6 | A | 1 | |||
| Repetitive avalanche energy | EAR | 4.3 | mJ | 1 | |||
| Maximum power dissipation | PD | 43 | W | TC = 25 °C | 1 | ||
| Peak diode recovery dV/dt | dV/dt | 5.5 | V/ns | ISD ≤ 5.6 A, dI/dt ≤ 75 A/μs, VDD ≤ VDS, TJ ≤ 175 °C | 1 | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Soldering recommendations (peak temperature) | 300 | °C | For 10 s, 1.6 mm from case | 1 | |||
| Mounting torque 6-32 or M3 screw | 10 | lbf·in | 1 | ||||
| Mounting torque 6-32 or M3 screw | 1.1 | N·m | 1 | ||||
| Drain-source breakdown voltage | VDS | 100 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Gate-source threshold voltage | VGS(th) | 1 | 2 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-source leakage | IGSS | -100 | 100 | nA | VGS = ±10 V | 2 | |
| Zero gate voltage drain current | IDSS | 25 | μA | VDS = 100 V, VGS = 0 V | 2 | ||
| Zero gate voltage drain current | IDSS | 250 | μA | VDS = 80 V, VGS = 0 V, TJ = 150 °C | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.54 | Ω | VGS = 5.0 V, ID = 3.4 A | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.76 | Ω | VGS = 4.0 V, ID = 2.8 A | 2 | ||
| Forward transconductance | gfs | 1.9 | S | VDS = 50 V, ID = 3.4 A | 2 | ||
| Total gate charge | Qg | 6.1 | nC | VGS = 5.0 V, ID = 5.6 A, VDS = 80 V, see fig. 6 and 13b | 2 | ||
| Gate-source charge | Qgs | 2.6 | nC | 2 | |||
| Gate-drain charge | Qgd | 3.3 | nC | 2 | |||
| Continuous source-drain diode current | IS | 5.6 | A | 2 | |||
| Pulsed diode forward current | ISM | 18 | A | 2 | |||
| Body diode voltage | VSD | 2.5 | V | TJ = 25 °C, IS = 5.6 A, VGS = 0 V | 2 | ||
| Body diode reverse recovery time | trr | 110 | 130 | ns | TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μs | 2 | |
| Body diode reverse recovery charge | Qrr | 0.5 | 0.65 | μC | 2 | ||
| Maximum junction-to-ambient | RthJA | 62 | °C/W | 2 | |||
| Maximum junction-to-case (drain) | RthJC | 3.5 | °C/W | 2 | |||
| Case-to-sink, flat, greased surface | RthCS | 0.5 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
IRL510PBF - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
irl510pbf-etched.step/irl510pbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irl510pbf.step/irl510pbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (9 pp, sha256
38d7d67217741282, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRL510PBF
**Vishay Intertech** · MOSFETs · TO-220AB
IRL510PBF from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; gate-source voltage is rated at ±10 V, and the part is logic-level driven with RDS(on) specified at VGS = 4 V and 5 V. |
| 2 | D | passive | Drain of the N-channel MOSFET; rated 100 V drain-source with 5.6 A continuous drain current at VGS = 5 V and TC = 25 °C, and the junction-to-case thermal resistance is specified to the drain. |
| 3 | S | passive | Source of the N-channel MOSFET; the integral body diode is rated for 5.6 A continuous source-drain current. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | | | 100 | V | | 1 |
| Gate-source voltage | VGS | -10 | | 10 | V | | 1 |
| Continuous drain current | ID | | | 5.6 | A | VGS at 5 V, TC = 25 °C | 1 |
| Continuous drain current | ID | | | 4 | A | VGS at 5 V, TC = 100 °C | 1 |
| Pulsed drain current | IDM | | | 18 | A | | 1 |
| Single pulse avalanche energy | EAS | | | 100 | mJ | VDD = 25 V, starting TJ = 25 °C, L = 4.8 mH, Rg = 25 Ω, IAS = 5.6 A | 1 |
| Repetitive avalanche current | IAR | | | 5.6 | A | | 1 |
| Repetitive avalanche energy | EAR | | | 4.3 | mJ | | 1 |
| Maximum power dissipation | PD | | | 43 | W | TC = 25 °C | 1 |
| Peak diode recovery dV/dt | dV/dt | | | 5.5 | V/ns | ISD ≤ 5.6 A, dI/dt ≤ 75 A/μs, VDD ≤ VDS, TJ ≤ 175 °C | 1 |
| Operating junction and storage temperature range | TJ, Tstg | -55 | | 175 | °C | | 1 |
| Soldering recommendations (peak temperature) | | | | 300 | °C | For 10 s, 1.6 mm from case | 1 |
| Mounting torque 6-32 or M3 screw | | | | 10 | lbf·in | | 1 |
| Mounting torque 6-32 or M3 screw | | | | 1.1 | N·m | | 1 |
| Drain-source breakdown voltage | VDS | 100 | | | V | VGS = 0 V, ID = 250 μA | 2 |
| Gate-source threshold voltage | VGS(th) | 1 | | 2 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-source leakage | IGSS | -100 | | 100 | nA | VGS = ±10 V | 2 |
| Zero gate voltage drain current | IDSS | | | 25 | μA | VDS = 100 V, VGS = 0 V | 2 |
| Zero gate voltage drain current | IDSS | | | 250 | μA | VDS = 80 V, VGS = 0 V, TJ = 150 °C | 2 |
| Drain-source on-state resistance | RDS(on) | | | 0.54 | Ω | VGS = 5.0 V, ID = 3.4 A | 2 |
| Drain-source on-state resistance | RDS(on) | | | 0.76 | Ω | VGS = 4.0 V, ID = 2.8 A | 2 |
| Forward transconductance | gfs | 1.9 | | | S | VDS = 50 V, ID = 3.4 A | 2 |
| Total gate charge | Qg | | | 6.1 | nC | VGS = 5.0 V, ID = 5.6 A, VDS = 80 V, see fig. 6 and 13b | 2 |
| Gate-source charge | Qgs | | | 2.6 | nC | | 2 |
| Gate-drain charge | Qgd | | | 3.3 | nC | | 2 |
| Continuous source-drain diode current | IS | | | 5.6 | A | | 2 |
| Pulsed diode forward current | ISM | | | 18 | A | | 2 |
| Body diode voltage | VSD | | | 2.5 | V | TJ = 25 °C, IS = 5.6 A, VGS = 0 V | 2 |
| Body diode reverse recovery time | trr | | 110 | 130 | ns | TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μs | 2 |
| Body diode reverse recovery charge | Qrr | | 0.5 | 0.65 | μC | | 2 |
| Maximum junction-to-ambient | RthJA | | | 62 | °C/W | | 2 |
| Maximum junction-to-case (drain) | RthJC | | | 3.5 | °C/W | | 2 |
| Case-to-sink, flat, greased surface | RthCS | | 0.5 | | °C/W | | 2 |
## CAD (KiCad official)
- Symbol: `IRL510PBF`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `irl510pbf-etched.step` / `irl510pbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irl510pbf.step` / `irl510pbf.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Vishay Intertech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590222125811736576) (9 pp, sha256 `38d7d67217741282`, retrieved 2026-10-15, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irl510pbf-datasheet.pdf)